@inproceedings{42c5362f89b84a22a54ef56824419976,
title = "A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology",
abstract = "A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than-35.35/-36.2 dB at 28 GHz.",
keywords = "5G, CMOS, Class-F, Power amplifier, millimeter-wave",
author = "Hung, {Jui Cheng} and Cheng, {Yu Tung} and Tsai, {Jeng Han} and Huang, {Tian Wei}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 ; Conference date: 25-08-2021 Through 27-08-2021",
year = "2021",
month = aug,
day = "25",
doi = "10.1109/RFIT52905.2021.9565315",
language = "English",
series = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",
}