A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS

Kun Chan Chiang, Tsung Ching Tsai, Ian Huang, Jeng Han Tsai, Tian Wei Huang

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.

原文英語
主出版物標題2019 IEEE MTT-S International Microwave Symposium, IMS 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1283-1286
頁數4
ISBN(電子)9781728113098
出版狀態已發佈 - 2019 六月
事件2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, 美国
持續時間: 2019 六月 22019 六月 7

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
2019-June
ISSN(列印)0149-645X

會議

會議2019 IEEE MTT-S International Microwave Symposium, IMS 2019
國家/地區美国
城市Boston
期間2019/06/022019/06/07

ASJC Scopus subject areas

  • 凝聚態物理學
  • 輻射
  • 電氣與電子工程

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