A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

Jeng Han Tsai; Pei Si Wu; Chin Shen Lin; Tian Wei Huang; John G.J. Chern; Wen Chu Huang

doi:10.1109/LMWC.2007.892934

A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

Jeng Han Tsai^*
, Pei Si Wu
, Chin Shen Lin
, Tian Wei Huang
, John G.J. Chern
, Wen Chu Huang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

89 引文斯高帕斯（Scopus）

摘要

A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm². The OP_{1 dB} of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.

原文	英語
頁（從 - 到）	247-249
頁數	3
期刊	IEEE Microwave and Wireless Components Letters
卷	17
發行號	4
DOIs	https://doi.org/10.1109/LMWC.2007.892934
出版狀態	已發佈 - 2007 4月
對外發佈	是

ASJC Scopus subject areas

凝聚態物理學
電氣與電子工程

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10.1109/LMWC.2007.892934

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title = "A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology",

abstract = "A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm2. The OP1 dB of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.",

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author = "Tsai, \{Jeng Han\} and Wu, \{Pei Si\} and Lin, \{Chin Shen\} and Huang, \{Tian Wei\} and Chern, \{John G.J.\} and Huang, \{Wen Chu\}",

note = "Funding Information: Manuscript received July 23, 2006; revised December 6, 2006. This work was supported in part by NTU-TSMC Joint-Development Project and the National Science Council of Taiwan, R.O.C., under Grants NSC 95-2219-E-002-011, NSC 95-2221-E-002-084-MY2, and NSC 93-2752-E-002-003-PAE.",

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AU - Lin, Chin Shen

AU - Huang, Tian Wei

AU - Chern, John G.J.

AU - Huang, Wen Chu

N1 - Funding Information: Manuscript received July 23, 2006; revised December 6, 2006. This work was supported in part by NTU-TSMC Joint-Development Project and the National Science Council of Taiwan, R.O.C., under Grants NSC 95-2219-E-002-011, NSC 95-2221-E-002-084-MY2, and NSC 93-2752-E-002-003-PAE.

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N2 - A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm2. The OP1 dB of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.

AB - A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm2. The OP1 dB of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.

KW - CMOS

KW - Gilbert-cell

KW - Millimeter-wave (MMW)

KW - Mixer

KW - Monolithic microwave integrated circuit (MMIC)

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A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

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