A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

Hamed Alsuraisry, Jen Hao Cheng, Shih Jyun Luo, Wen Jie Lin, Jeng Han Tsai, Tian Wei Huang

研究成果: 書貢獻/報告類型會議論文篇章

4 引文 斯高帕斯(Scopus)

摘要

A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP1dB) of 18.9 dBm with peak power-Added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm2, including all the dc and RF pads.

原文英語
主出版物標題2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015
編輯Fan Meng, Wei Hong, Guang-Qi Yang, Zhe Song, Xiao-Wei Zhu
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479987658
DOIs
出版狀態已發佈 - 2015
事件2015 Asia-Pacific Microwave Conference, APMC 2015 - Nanjing, 中国
持續時間: 2015 十二月 62015 十二月 9

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC
3

其他

其他2015 Asia-Pacific Microwave Conference, APMC 2015
國家/地區中国
城市Nanjing
期間2015/12/062015/12/09

ASJC Scopus subject areas

  • 電氣與電子工程

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