@inproceedings{cc14b8943e4e447393e8a1a7d169d89f,
title = "A 24-GHz 3.8-dB NF low-noise amplifier with built-in linearizer",
abstract = "A K-band low-noise amplifier with built-in linearizer using 0.18-μm CMOS technology is presented in this paper. To achieve good linearity at high frequency, a distributed derivative superposition linearization technique is used. The measured results show that the improvement of IIP3 and IM3 are 5.3 dB and 10.6 dB at 24 GHz, respectively. The proposed LNA has a noise figure of 3.8 dB and a peak gain of 13.7 dB while consuming 18 mW dc power. To the best of our knowledge, this is the first LNA with a built-in linearizer above 20 GHz in CMOS.",
keywords = "CMOS, K-band, linearizer, low noise amplifier (LNA)",
author = "Kuo, {Yen Hung} and Tsai, {Jeng Han} and Chou, {Wei Hung} and Huang, {Tian Wei}",
year = "2010",
language = "English",
isbn = "9784902339222",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "1505--1508",
booktitle = "2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010",
note = "2010 Asia-Pacific Microwave Conference, APMC 2010 ; Conference date: 07-12-2010 Through 10-12-2010",
}