A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process

Chieh Wei Wang, Yu Chun Chen, Wen Jie Lin, Jeng Han Tsai, Tian Wei Huang

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

This paper presents a wideband transformer-based power amplifier applicable for the millimeter-wave (MMW) fifth generation (5G) mobile communication. The proposed power amplifier is manufactured in 28-nm HPC-plus CMOS process. The power stage and driver stage amplifiers are biased in deep class-AB to reduce the dc power dissipation in the linear power region and provide a linear operation close to the saturated output power (PSAT) of the PA. In the output matching network, a transformer with two coupled resonant capacitors is designed for broadband power matching. The proposed PA achieves the peak small-signal power gain (Gp) of 20.4-dB at 23 GHz and a measured 3dB small-signal gain bandwidth (BW3dB) from 20.8 to 41.6 GHz covering the multiple 5G bands with only 39.6-mW quiescent power consumption. The measured Psat is 16.1-dBm at 30 GHz with over 50% Psat output power 1dB bandwidth (BW1\dB) from 23 to 38.5-GHz. Also, this PA reports a 35% peak power added efficiency (PAEMAX) at 25 GHz and a 13-dBm peak OP1\dB at 41 GHz. In the 64-QAM OFDM modulated signal measurement, this power amplifier obtains an output power of 7.2/6.9-dBm and a modulated PAE of 8.5%/8.8% at 23 and 41-GHz respectively when keeping the EVM below -25 dBc.

原文英語
主出版物標題IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1323-1326
頁數4
ISBN(電子)9781728168159
DOIs
出版狀態已發佈 - 2020 八月
事件2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, 美国
持續時間: 2020 八月 42020 八月 6

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
2020-August
ISSN(列印)0149-645X

會議

會議2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
國家美国
城市Virtual, Los Angeles
期間2020/08/042020/08/06

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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