A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 μm SiGe process

Yu Cheng Liu, Yi Wei Chang, Ya Che Yeh, Shou Hsien Weng, Jeng Han Tsai, Hong Yeh Chang

研究成果: 書貢獻/報告類型會議論文篇章

5 引文 斯高帕斯(Scopus)

摘要

A 2-to-67 GHz distributed N-type complementary metal oxide semiconductor (NMOS)-heterojunction bipolar transistor (HBT) Darlington mixer using 0.18 μm SiGe BiCMOS process is presented in this paper. A distributed topology is adopted to achieve broad RF bandwidth with good radio frequency (RF) and local oscillation (LO) input return losses. A hybrid NMOS-HBT Darlington cell is utilized in the mixer gain cell design to extend RF bandwidth with low LO driving power as compared to the conventional distributed drain mixer. The proposed mixer exhibits a broad RF factional bandwidth of 188.4%, a maximum conversion gain of 5 dB, a LO power of 0 dBm, and a compact chip size of 0.76 × 0.55 mm2. The total dc power consumption is 17.5 mW.

原文英語
主出版物標題2016 IEEE MTT-S International Microwave Symposium, IMS 2016
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509006984
DOIs
出版狀態已發佈 - 2016 八月 9
事件2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, 美国
持續時間: 2016 五月 222016 五月 27

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
2016-August
ISSN(列印)0149-645X

會議

會議2016 IEEE MTT-S International Microwave Symposium, IMS 2016
國家/地區美国
城市San Francisco
期間2016/05/222016/05/27

ASJC Scopus subject areas

  • 輻射
  • 凝聚態物理學
  • 電氣與電子工程

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