A 1-Watt 38 GHz Power Amplifier Using 0.1-μm GaAs p-HEMT Technology

Jeng Han Tsai, Geng Sheng Wei, Yu Zhe Lin

研究成果: 書貢獻/報告類型會議論文篇章

摘要

The paper presents a 38 GHz power amplifier using 0.1-μm D-mode GaAs pseudomorphic high electron mobility transistor (p-HEMT) technology for the fifth generation (5G) mobile communications. Utilizing four-way direct shunt power combining and low impedance transmission line pre-matching techniques, the measured saturation output power of the PA is 30.2 dBm and the output 1-dB gain compression point (OP1dB) is 29.4 dBm at 38 GHz. The measured peak power added efficiency (PAE) is 23.4 % and the PAE at OP1dB is 20.8 %. The small signal gain is 18.4 dB at 38 GHz and the chip size is 2.9 × 1.8mm2.

原文英語
主出版物標題2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665433914
DOIs
出版狀態已發佈 - 2021 8月 25
事件2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, 臺灣
持續時間: 2021 8月 252021 8月 27

出版系列

名字2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

會議

會議2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
國家/地區臺灣
城市Hualien
期間2021/08/252021/08/27

ASJC Scopus subject areas

  • 電腦網路與通信
  • 電氣與電子工程
  • 儀器

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