A 1-V operated polymer vertical transistor with high on/off current ratio

Yu Chiang Chao, Wu Wei Tsai, Chun Yu Chen, Hsiao Wen Zan, Hsin Fei Meng

    研究成果: 書貢獻/報告類型會議論文篇章

    2 引文 斯高帕斯(Scopus)

    摘要

    A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×104 is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in our report enable polymer vertical transistors for real applications.

    原文英語
    主出版物標題2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
    頁面15.2.1-15.2.4
    DOIs
    出版狀態已發佈 - 2009 十二月 1
    事件2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, 美国
    持續時間: 2009 十二月 72009 十二月 9

    出版系列

    名字Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(列印)0163-1918

    會議

    會議2009 International Electron Devices Meeting, IEDM 2009
    國家美国
    城市Baltimore, MD
    期間2009/12/072009/12/09

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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