摘要
In this letter, a low-voltage and low-power 3.5-GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18-μm MS/RF complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. The complementary current-reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 145-147 |
| 頁數 | 3 |
| 期刊 | Microwave and Optical Technology Letters |
| 卷 | 54 |
| 發行號 | 1 |
| DOIs | |
| 出版狀態 | 已發佈 - 2012 1月 |
ASJC Scopus subject areas
- 電子、光磁材料
- 原子與分子物理與光學
- 凝聚態物理學
- 電氣與電子工程
指紋
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