A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture

Chia Lin Hsieh, Ming Hang Wu, Jen Hao Cheng, Jeng Han Tsai, Tian Wei Huang

研究成果: 書貢獻/報告類型會議貢獻

7 引文 斯高帕斯(Scopus)

摘要

In this paper, a gm-boosted low-noise amplifier (LNA) with a low-voltage architecture is proposed to enhance gain and noise performance under low-power operation. It is designed at 5-GHz using 0.18-μm CMOS process. By employing current-reused, and forward-body-bias techniques, LNA can operate at a reduced supply voltage with micro-watt dc power consumption. In addition, gm-boosted topology using transformer-coupling is added to the LNA to further improve gain and to reduce noise factor simultaneously. Based on aforementioned techniques, the 5-GHz LNA presents a gain of 10.0 dB and a noise figure of 4.8 dB at 4.8 GHz. Under a supply voltage of 0.6 V, the dc power consumption is 336 μW.

原文英語
主出版物標題2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
出版狀態已發佈 - 2013 十二月 1
事件2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, 美国
持續時間: 2013 六月 22013 六月 7

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
ISSN(列印)0149-645X

其他

其他2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
國家美国
城市Seattle, WA
期間13/6/213/6/7

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • 引用此

    Hsieh, C. L., Wu, M. H., Cheng, J. H., Tsai, J. H., & Huang, T. W. (2013). A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture. 於 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 [6697468] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2013.6697468