A 0.33 V 683 μW K-band transformer-based receiver front-end in 65 nm CMOS technology

Jen Hao Cheng, Chia Lin Hsieh, Ming Hang Wu, Jeng Han Tsai, Tian Wei Huang

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

摘要

An ultra-low-power transformer-based K-band receiver front-end is implemented in a 65 nm CMOS technology. For noise and input matching, a gate-to-source transformer-feedback technique is applied to the first-stage of the LNA. A transformer-based gain-boosting feedback technique is adopted in the second-stage of the LNA for further gain enhancement without additional dc power. Several transformers are utilized for inter-stage matching of the LNA and for single-to-differential LO/RF baluns of the ring mixer. By using forward-body-bias technique, the LNA operates at 0.33 V supply. For low-power receiver, a resistive ring mixer is adopted. The receiver demonstrates a 12.5 dB conversion gain (CG) and a 5.7 dB double-side band NF at IF frequency of 100 MHz with LO power of -10 dBm while consuming only 683 μW. To the best of our knowledge, the receiver demonstrates the lowest dc power consumption among recently reported K-band CMOS receiver.

原文英語
文章編號7015618
頁(從 - 到)184-186
頁數3
期刊IEEE Microwave and Wireless Components Letters
25
發行號3
DOIs
出版狀態已發佈 - 2015 三月 1

ASJC Scopus subject areas

  • 凝聚態物理學
  • 電氣與電子工程

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