摘要
A 5.3 GHz high-efficiency and low-cost class-E power amplifier (PA) implemented in a 180 nm CMOS process is presented. Cascode con- figuration is utilised in the class-E PA to achieve high efficiency due to its high gain property and low drain-to-source parasitic capacitor. Through the trade-off between inductance and inductor loss, an optimised RF choke inductor for fully integrated class-E PA design can be selected to achieve high efficiency while maintaining compact circuit size. The class-E CMOS PA demonstrates the highest Power Added Efficiency (PAE) of 42% and greatest power area density of 532 mW/mm2 in 0.263 mm2 chip area to date.
原文 | 英語 |
---|---|
頁(從 - 到) | 1338-1340 |
頁數 | 3 |
期刊 | Electronics Letters |
卷 | 52 |
發行號 | 15 |
DOIs | |
出版狀態 | 已發佈 - 2016 7月 21 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電氣與電子工程