3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

J. Y. Lee*, F. S. Chang, K. Y. Hsiang, P. H. Chen, Z. F. Luo, Z. X. Li, J. H. Tsai, C. W. Liu, M. H. Lee

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

A 1500x ILRS/IHRS with a high cell current of 100 nA/ cell (J = 83 A/cm2) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, a self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating multiple layers of AFE V-FTJs with contact optimization further increases memory density. Robust endurance > 109 cycles at |4V| and stable nonvolatile data retention > 104 sec with extrapolation to 10 years are achieved. The proposed cell contact V-FTJ by AFE is a promising pathway toward BEOL NVMs by a NAND/NOR-based framework.

原文英語
主出版物標題2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9784863488069
DOIs
出版狀態已發佈 - 2023
事件2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, 日本
持續時間: 2023 6月 112023 6月 16

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2023-June
ISSN(列印)0743-1562

會議

會議2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
國家/地區日本
城市Kyoto
期間2023/06/112023/06/16

ASJC Scopus subject areas

  • 電氣與電子工程

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