3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Y. D. Lin, Y. T. Tang, S. S. Sheu, T. H. Hou, W. C. Lo, M. H. Lee, M. F. Chang, Y. C. King, C. J. Lin, H. Y. Lee, P. C. Yeh, H. Y. Yang, P. S. Yeh, C. Y. Wang, J. W. Su, S. H. Li

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

摘要

The major challenge of FRAM scaling is to maintain high polarization density on the vertical sidewall of 3D ferroelectric capacitors. We reported a CMOS-compatible HfZrOx FRAM technology that shows a wake-up free character, 1010/109 endurance cycles, extrapolated 10-year retention at 105°C/85°C, and initial Pr = 25/18 μC/cm2 for 2D/3D FRAM, respectively. The strain effect at atomic interfaces is considered by the density functional theory (DFT) simulation. Two simple yet effective methods, stress engineering and optimized interface orientation, are proposed to facilitate preferential transition from tetragonal to orthorhombic phase. The test chip of 2T2C 3D FRAM demonstrates a fast sensing speed of 17 MHz at VDD of 4V.

原文英語
主出版物標題2019 IEEE International Electron Devices Meeting, IEDM 2019
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728140315
DOIs
出版狀態已發佈 - 2019 十二月
事件65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, 美国
持續時間: 2019 十二月 72019 十二月 11

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2019-December
ISSN(列印)0163-1918

會議

會議65th Annual IEEE International Electron Devices Meeting, IEDM 2019
國家美国
城市San Francisco
期間19/12/719/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Lin, Y. D., Tang, Y. T., Sheu, S. S., Hou, T. H., Lo, W. C., Lee, M. H., Chang, M. F., King, Y. C., Lin, C. J., Lee, H. Y., Yeh, P. C., Yang, H. Y., Yeh, P. S., Wang, C. Y., Su, J. W., & Li, S. H. (2019). 3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx. 於 2019 IEEE International Electron Devices Meeting, IEDM 2019 [8993504] (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993504