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以Nd-YAG脈衝式雷射製作氮化鋁層之研究

研究計畫: 政府部門科技部計畫

專案詳細資料

說明

The AlN is a new kind of base plate materials, because it have high heat-conduction coefficient, good resistance for corrosion, the heat- coefficient of expansion is similar to silicon, and advantages such as the high strength, etc., so is in various fields extensive application, praised as the ideal material of the electronic base plate especially. And with scientific and technological progress, electronic element heal towards develop towards miniaturization, heat that produce work, will rely on the base plate to take away soon, if the heat abstraction unable to be effective of base plate, will cause the component overheatedly and even burn out, so heat-dissipating ability of base plate one quite important indicator, so taking AlN as heat-dissipating material the intersection of base plate and the procedure is important. This research plans to utilize pulse Nd: YAG laser, on condition adding any filler materials, utilize nitrogen to be angry to put on, make superficial the intersection of nitrogen and the intersection of aluminum and layer to 5052 aluminum alloy, and utilize the Taguchi method in the field to cooperate with the experiment to test and revise, find out the laser best parameter of making AlN layer. And then utilize optical microscope, scanning electron microscope (SEM) , Energy Dispersive X-ray Spcetrometer (EDS) Implement the metallurgy and organize observing, Analyze their AlN layer property under the different laser parameter and change, in order to set up, use pulse laser to make the intersection of AlN and relevant method and mechanical property materials of aluminum while being laser, for producing and a researcher consults and uses. The results indicate that AlN layers structure from the outside to the inside are dense granularity and loosely leafy, which could reach to 14μm in thickness. The nitrogen content (N-content) of nitride layer made by ammonia is superior to those of nitrogen made. The optimized parameters obtained by Taguchi method are as following: Laser Power 40W, Pulse Width 3.7ms, Pulse Frequency 5Hz, Laser travel speed 1.5cm/min. It is shown that N-content of AlN layers relates mainly to Laser Power and Laser travel speed. Laser power has the central place in aluminum nitride formation.
狀態已完成
有效的開始/結束日期2012/08/012013/07/31

Keywords

  • 氮化鋁
  • 雷射氣體氮化
  • 脈衝式Nd:YAG雷射
  • 田口方法

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