• 49 引文
  • 5 h-指數
1988 …2019

每年研究成果

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研究成果

  • 49 引文
  • 5 h-指數
  • 9 文章
  • 4 會議貢獻
  • 1
  • 1 Conference article
2019

Effects of deposition parameters on the structure and properties of ZrN, WN and ZrWN films

Wu, C. Y., Chen, J. H., Kuo, C. G., Twu, M. J., Peng, S. W. & Hsu, C. Y., 2019 一月 1, 於 : Bulletin of Materials Science. 42, 1, 38.

研究成果: 雜誌貢獻文章

2016
6 引文 斯高帕斯(Scopus)
2015
17 引文 斯高帕斯(Scopus)
2 引文 斯高帕斯(Scopus)
2014

Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Lin, K. C., Twu, M. J., Juan, P. C., Hsu, H. W., Huang, H. S., Wang, M. C. & Liu, C. H., 2014 一月 1, 於 : International Journal of Nanotechnology. 11, 1-4, p. 27-39 13 p.

研究成果: 雜誌貢獻文章

Improved performance for dye-sensitized solar cells using a compact TiO2 layer grown by sputtering

Chang, H. C., Twu, M. J., Hsu, C. Y., Hsu, R. Q. & Kuo, C. G., 2014, 於 : International Journal of Photoenergy. 2014, 380120.

研究成果: 雜誌貢獻文章

8 引文 斯高帕斯(Scopus)

Optimization of BiFeO3MFIS capacitors doped niobium by using Taguchi method

Lin, K. C., Ko, C. H., Twu, M. J., Juan, P. C., Sekiguchi, H. & Chou, C. H., 2014 一月 16, Quantum, Nano, Micro Technologies and Applied Researches. p. 141-145 5 p. (Applied Mechanics and Materials; 卷 481).

研究成果: 書貢獻/報告類型會議貢獻

The analysis of channel stress induced by CESL in N-MOSFET

Twu, M-J., Kao, W-C., Lin, K. C., Chen, K. D., Kua, Y. T. & Liu, C-H., 2014 一月 16, Quantum, Nano, Micro Technologies and Applied Researches. p. 235-240 6 p. (Applied Mechanics and Materials; 卷 481).

研究成果: 書貢獻/報告類型會議貢獻

2013

Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths

Hsu, H. W., Lin, K. C., Lee, C. C., Twu, M-J., Huang, H. S., Chen, S. Y., Peng, M. R., Teng, H. H. & Liu, C-H., 2013 十月 1, 於 : Thin Solid Films. 544, p. 120-124 5 p.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

The analysis of the process-induced channel stress in N-MOSFET

Twu, M-J., Deng, R. H., Chen, Z. H., Tsai, M. C., Lin, K. C. & Liu, C-H., 2013 七月 8, Materials Science and Chemical Engineering. p. 440-444 5 p. (Advanced Materials Research; 卷 699).

研究成果: 書貢獻/報告類型會議貢獻

The simulation analysis of MOSFET channel stress for different oxide/nitride/oxide (ONO) spacer thicknesses

Chen, J. Y., Chen, Z. H., Lin, K. C., Twu, M-J., Hung, Y. H., Chou, P. Y., Chen, G. T., Liu, Y. S. & Liu, C-H., 2013 七月 8, Materials Science and Chemical Engineering. p. 436-439 4 p. (Advanced Materials Research; 卷 699).

研究成果: 書貢獻/報告類型會議貢獻

2012

ONO側壁與CESL對MOSFET通道應力影響之分析

楊煌偉(Huang-Wei Y, 鄧榮皓(Rong-Hou D, 蔡旻琦(Ming-Chi T, 屠名正(Ming-Jenq T & 劉傳璽(Chuan-Hsi L, 2012, 於 : 真空科技. 25, 3, p. 22-27 6 p.

研究成果: 雜誌貢獻文章

2005

Opto-mechanical analysis for confocal laser scanning microscope

Chang, G. W., Twu, M. J., Lin, Y. H., Liao, C. C. & Kuo, H. Z., 2005 十二月 29, 於 : Proceedings of SPIE - The International Society for Optical Engineering. 5877, p. 1-9 9 p., 587710.

研究成果: 雜誌貢獻Conference article

1 引文 斯高帕斯(Scopus)
1992

A new method for contour plotting in finite element analysis

Ming-Jenq, T. & Bo Ping Wang, P. W., 1992 十二月 3, 於 : Computers and Structures. 45, 5-6, p. 1097-1102 6 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)
1988

Finite element simulation of orthogonal cutting - a survey

Wang, B. P., Sadat, A. B. & Twu, M. J., 1988 十二月 1, p. 87-91. 5 p.

研究成果: 會議貢獻類型

8 引文 斯高帕斯(Scopus)