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查看斯高帕斯 (Scopus) 概要
屠 名正
副教授
之前聯繫機構
機電工程學系
https://orcid.org/0000-0001-8577-4424
h-index
h10-index
h5-index
130
引文
6
h-指數
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95
引文
4
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
38
引文
1
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
1988 …
2020
每年研究成果
概覽
指紋
網路
研究成果
(16)
類似的個人檔案
(5)
指紋
查看啟用 Ming-Jenq Twu 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
INIS
layers
100%
simulation
62%
oxides
58%
sputtering
55%
performance
53%
films
53%
mosfet
50%
thickness
44%
metals
44%
semiconductor materials
36%
substrates
35%
finite element method
35%
field effect transistors
33%
titanium oxides
33%
devices
33%
nitrides
32%
spacers
31%
doped materials
26%
compacts
23%
length
23%
magnetrons
22%
direct current
22%
coatings
21%
height
20%
deposition
19%
power
19%
surfaces
18%
impulse
16%
cutting
16%
muscles
16%
motion
16%
tungsten nitrides
16%
control
16%
dynamics
16%
exoskeleton
16%
modeling
16%
zirconium nitrides
16%
actuators
16%
chromium nitrides
16%
surveys
16%
carbon steels
16%
cables
16%
pneumatics
16%
shape
16%
fatigue
16%
lasers
16%
reliability
16%
solar cells
16%
tin
16%
niobium
16%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Induced Stress
40%
Tensiles
39%
Metal-Oxide-Semiconductor Field Effect Transistor (Mosfets)
33%
Oxide-Nitride-Oxide
20%
Channel Length
19%
Nitride
17%
High Power Impulse Magnetron Sputtering
16%
Finite Element Simulation
16%
Shape Function
16%
Layer Thickness
16%
Motion Control
16%
Actuator
16%
Pneumatic Artificial Muscle
16%
Exoskeleton (Robotics)
16%
Medium-Carbon Steels
16%
Reactive Sputtering
16%
Channel Region
12%
Gate Dielectric
11%
Simulation Result
11%
Finite Element Analysis
10%
Device Performance
8%
Experimental Investigation
8%
Intrinsic Stress
8%
Capping Layer
8%
Temperature Stress
8%
Chip Thickness
8%
Plastic Strain
8%
Layer Structure
8%
Shear Angle
8%
Material Behavior
8%
Metal Cutting
8%
Residual Stress
8%
Strain Analysis
8%
Plane Strain
8%
Nitride Layer
8%
Induced Damage
8%
Stress Condition
8%
Solid state physics
8%
Interface State
8%
Surface Region
8%
Cyclic Loading
8%
Compressive Stress
6%
Applied Stress
5%
304 stainless steel
5%
Photovoltage
5%
Induced Hydrophilicity
5%
Material Science
Film
43%
Titanium Dioxide
33%
Magnetron Sputtering
24%
Taguchi Method
19%
Nitride Compound
19%
Oxide Compound
19%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Mechanical Testing
16%
Niobium
16%
Fatigue Behavior
16%
Medium-Carbon Steels
16%
Capacitor
16%
High Power Impulse Magnetron Sputtering
16%
Hot Carrier
16%
Confocal Microscopy
16%
Dye-Sensitized Solar Cell
16%
X-Ray Diffraction
13%
Fatigue of Materials
12%
Electronic Circuit
10%
Tin Oxide
10%
Scanning Electron Microscopy
7%
Thin Films
6%
Oxide Glass
6%
Crystal Structure
6%
Signal-to-Noise Ratio
5%
Polyethylene Terephthalate
5%
Niobium Ion
5%
Iron Ion
5%
Annealing
5%