李 敏鴻

研究成果

每年研究成果 1998 2000 2001 2004 2005 2006 2007 2008 2010 2011 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2022

• 132 期刊論文
• 58 會議論文篇章
• 14 會議論文
• 2 回顧評介論文
• 1 更多
  • 1 通訊期刊論文

每年研究成果

每年研究成果

搜尋結果

• Strained-Si with carbon incorporation for MOSFET source/drain engineering

  Lee, M. H., Chang, S. T., Lee, S. W., Chen, P. S., Shen, K. W. & Wang, W. C., 2008 7月 30, 於: Applied Surface Science. 254, 19, p. 6147-6150 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • field effect transistors 100%
  • Carbon 96%
  • engineering 94%
  • carbon 84%
  • Carbon Atom 59%

• Strain-induced growth of SiO₂ dots by liquid phase deposition

  Liu, C. W., Hsu, B. C., Chen, K. F., Lee, M. H., Shie, C. R. & Chen, P. S., 2003 1月 27, 於: Applied Physics Letters. 82, 4, p. 589-591 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  開啟存取

  • liquid phases 100%
  • caps 62%
  • metal oxide semiconductors 60%
  • deposits 53%
  • photometers 52%

• Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

  Lee, M. H., Hsu, S. M., Shen, J. D. & Liu, C., 2015 4月 20, 於: Microelectronic Engineering. 138, p. 77-80 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Shear Stress 100%
  • stress distribution 77%
  • Dielectric Material 73%
  • Stress concentration 71%
  • finite element method 69%
  21 引文 斯高帕斯（Scopus）

• Studying the impact of carbon on device performance for strained-Si MOSFETs

  Lee, M. H., Chang, S. T., Peng, C. Y., Hsieh, B. F., Maikap, S. & Liao, S. H., 2008 11月 3, 於: Thin Solid Films. 517, 1, p. 105-109 5 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • field effect transistors 100%
  • Carbon 96%
  • Scattering 90%
  • carbon 84%
  • Carbon Atom 59%

• Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes

  Liu, C. W., Chen, M. J., Lin, I. C., Lee, M. H. & Lin, C. F., 2000 8月 21, 於: Applied Physics Letters. 77, 8, p. 1111-1113 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • electroluminescence 100%
  • metal oxides 95%
  • diodes 74%
  • temperature dependence 63%
  • room temperature 55%
  15 引文 斯高帕斯（Scopus）

• The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect

  Liao, M. H., Huang, H. Y., Tsai, F. A., Chuang, C. C., Hsu, M. H., Lee, C. C., Lee, M. H., Lien, C., Hsieh, C. F., Wu, T. C., Wu, H. S. & Yao, C. W., 2017 6月 1, 於: Vacuum. 140, p. 63-65 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • fins 100%
  • Field effect transistors 89%
  • Field Effect 82%
  • Capacitance 71%
  • capacitance 66%

• The Demonstration of 3-D Bi_2.0Te_2.7Se_0.3/Bi_0.4Te_3.0Sb_1.6 Thermoelectric Devices by Ionized Sputter System

  Liao, M. H., Huang, K. C., Su, W. J., Chen, S. C. & Lee, M. H., 2020 1月, 於: IEEE Transactions on Electron Devices. 67, 1, p. 406-408 3 p., 8906168.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Thermoelectricity 100%
  • Demonstrations 73%
  • Seebeck coefficient 20%
  • Seebeck Coefficient 16%
  • Figure of Merit 14%
  1 引文 斯高帕斯（Scopus）

• The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance

  Liao, M. H., Lu, P. Y., Su, W. J., Chen, S. C., Hung, H. T., Kao, C. R., Pu, W. C., Chen, C. C. A. & Lee, M. H., 2020 5月, 於: IEEE Transactions on Electron Devices. 67, 5, p. 2205-2207 3 p., 9042868.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Carbon nanotubes 100%
  • Integrated circuits 87%
  • Demonstrations 77%
  • Carbon Nanotube 68%
  • Resistance 59%
  4 引文 斯高帕斯（Scopus）

• The demonstration of high-performance multilayer BaTiO₃/BiFeO₃ stack MIM capacitors

  Lien, C., Hsieh, C. F., Wu, H. S., Wu, T. C., Wei, S. J., Chu, Y. H., Liao, M. H. & Lee, M. H., 2018 11月, 於: IEEE Transactions on Electron Devices. 65, 11, p. 4834-4838 5 p., 8466023.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Capacitor 100%
  • Permittivity 97%
  • Multilayers 94%
  • Dielectric Constant 89%
  • Multilayer 86%
  9 引文 斯高帕斯（Scopus）

• The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology

  Yen, C. M., Chang, S. Y., Chen, K. C., Feng, Y. J., Chen, L. H., Liao, B. Z., Lee, M. H., Chen, S. C. & Liao, M. H., 2022 3月 1, 於: IEEE Transactions on Electron Devices. 69, 3, p. 1600-1603 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Carbon nanotubes 100%
  • Demonstrations 77%
  • Silicon 74%
  • Carbon Nanotube 68%
  • Chemical mechanical polishing 30%
  2 引文 斯高帕斯（Scopus）

• The demonstration of low-temperature (350 °C) grown carbon nano-tubes for the applications of through silicon via in 3D stacking and power-via

  Lin, H. Y., Basu, N., Chen, S. C., Lee, M. H. & Liao, M. H., 2022 12月 5, 於: Applied Physics Letters. 121, 23, 232101.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • tubes 100%
  • carbon 93%
  • silicon 75%
  • inserts 31%
  • titanium 23%
  1 引文 斯高帕斯（Scopus）

• The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators

  Liao, M. H., Wu, C. C., Su, W. J., Chen, S. C. & Lee, M. H., 2019 10月, 於: IEEE Transactions on Electron Devices. 66, 10, p. 4478-4480 3 p., 8818614.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Nanogenerators 100%
  • Electron-Hole Recombination 88%
  • Spin Coating 71%
  • Dielectric Material 60%
  • Dynamic models 55%
  3 引文 斯高帕斯（Scopus）

• The fabrication and the reliability of poly-Si MOSFETs using ultra-thin high-K/metal-gate stack

  Lee, M. H. & Chen, K. J., 2013 1月, 於: Solid-State Electronics. 79, p. 244-247 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Polysilicon 100%
  • Grain Boundary 89%
  • field effect transistors 68%
  • Trap Density Measurement 65%
  • Fabrication 64%
  1 引文 斯高帕斯（Scopus）

• The gap state density of micro/nano-crystalline silicon active layer on flexible substrate

  Lee, M. H., Chang, S. T., Lee, C. C., Huang, J. J., Hu, G. R. & Huang, Y. S., 2010 1月 1, 於: Thin Solid Films. 518, 6 SUPPL. 1, p. S246-S249

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Nanocrystalline silicon 100%
  • Density of State 57%
  • Substrates 37%
  • Strain 37%
  • Flexible electronics 37%
  2 引文 斯高帕斯（Scopus）

• The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic Capacitors

  Lien, C., Hsieh, C. F., Wu, T. C., Yang, C. S., Lee, M. H., Xu, J. J., Hu, C. W., Huang, C., Chang, S. Z. & Liao, M. H., 2020 8月, 於: IEEE Transactions on Electron Devices. 67, 8, p. 3417-3423 7 p., 9112658.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Leakage Current 100%
  • Leakage currents 81%
  • Capacitor 77%
  • Capacitors 60%
  • Permittivity 42%
  2 引文 斯高帕斯（Scopus）

• The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure

  Chen, K. C., Basu, N., Chen, S. C., Lee, M. H. & Liao, M. H., 2022 9月 1, 於: IEEE Transactions on Electron Devices. 69, 9, p. 5386-5390 5 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Skin Effect 100%
  • Multilayer 99%
  • Silicon 87%
  • Carbon 84%
  • Carbon Nanotube 81%

• The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing

  Lee, M. H. & Chen, P. G., 2012, 於: Nanoscale Research Letters. 7, 307.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  開啟存取

  • Laser Annealing 100%
  • Excimer lasers 86%
  • laser annealing 67%
  • Excimer 60%
  • excimer lasers 55%

• Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si _1-xGe_x/Si nMOSFETs with HfO₂ gate dielectric

  Yeo, C. C., Cho, B. J., Lee, M. H., Liu, C. W., Choi, K. J. & Lee, T. W., 2006 5月 1, 於: Semiconductor Science and Technology. 21, 5, p. 665-669 5 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Gate dielectrics 100%
  • caps 74%
  • Thermodynamic stability 72%
  • Annealing 69%
  • Dielectric Material 61%
  1 引文 斯高帕斯（Scopus）

• The role of carbon on performance of strained-Si:C surface channel NMOSFETs

  Lee, M. H., Chang, S. T., Maikap, S. & Huang, C. F., 2008 10月, 於: Solid-State Electronics. 52, 10, p. 1569-1572 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Carrier mobility 100%
  • Carbon 76%
  • carbon 67%
  • Lattice mismatch 60%
  • Electron mobility 52%
  1 引文 斯高帕斯（Scopus）

• The roughness-enhanced light emission from metal-oxide-silicon light-emitting diodes using very high vacuum prebake

  Lee, M. H., Chen, K. F., Lai, C. C., Liu, C. W., Pai, W. W., Chen, M. J. & Lin, C. F., 2002 3月 15, 於: Japanese Journal of Applied Physics, Part 2: Letters. 41, 3 B, p. L326-L328

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Light emission 100%
  • Silicon oxides 93%
  • high vacuum 69%
  • Light emitting diodes 63%
  • metal oxides 61%
  10 引文 斯高帕斯（Scopus）

• Thickness dependence of electrical conductivity and thermo-electric power of Bi_2.0Te_2.7Se_0.3/Bi_0.4Te_3.0Sb_1.6 thermo-electric devices

  Liao, M. H., Huang, K. C., Tsai, F. A., Liu, C. Y., Lien, C. & Lee, M. H., 2018 1月 1, 於: AIP Advances. 8, 1, 015020.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  開啟存取

  • bismuth tellurides 100%
  • electric power 90%
  • electrical resistivity 53%
  • thin films 35%
  • film thickness 22%
  9 引文 斯高帕斯（Scopus）

• Threading dislocation induced low frequency noise in strained-Si nMOSFETs

  Hua, W. C., Lee, M. H., Chen, P. S., Tsai, M. J. & Liu, C. W., 2005 9月, 於: IEEE Electron Device Letters. 26, 9, p. 667-669 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Threading Dislocation 100%
  • Field Effect 17%
  • Voltage 12%
  • Power spectral density 8%
  • Field effect transistors 8%
  10 引文 斯高帕斯（Scopus）

• Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si _1-x-yGe_xC_y thin films on Si(0 0 1) with ethylene (C₂H₄) precursor as carbon source

  Chen, P. S., Lee, S. W., Liu, Y. H., Lee, M. H., Tsai, M. J. & Liu, C. W., 2005 2月, 於: Materials Science in Semiconductor Processing. 8, 1-3 SPEC. ISS., p. 15-19 5 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Ultrahigh vacuum 100%
  • Chemical vapor deposition 74%
  • Secondary Ion Mass Spectroscopy 69%
  • Ethylene 66%
  • ultrahigh vacuum 63%
  8 引文 斯高帕斯（Scopus）

• Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

  Cheng, S. Y., Lee, M. H., Chang, S. T., Lin, C. Y., Chen, K. T. & Hsieh, B. F., 2013 10月 1, 於: Thin Solid Films. 544, p. 487-490 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Hole mobility 100%
  • Hole Mobility 71%
  • Oxide semiconductors 71%
  • MOSFET devices 70%
  • hole mobility 68%
  1 引文 斯高帕斯（Scopus）

• Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf_1−xZr_xO₂ diodes

  Hsiang, K. Y., Liao, C. Y., Wang, J. F., Lou, Z. F., Lin, C. Y., Chiang, S. H., Liu, C. W., Hou, T. H. & Lee, M. H., 2021 10月, 於: Nanomaterials. 11, 10, 2685.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  開啟存取

  • Antiferroelectric Material 100%
  • Ferroelectric materials 66%
  • Crystalline materials 52%
  • Diodes 46%
  • Polarization 37%
  4 引文 斯高帕斯（Scopus）

• Visualizing Ferroelectric Uniformity of Hf_{1- x}Zr _xO₂Films Using X-ray Mapping

  Chang, S. J., Teng, C. Y., Lin, Y. J., Wu, T. M., Lee, M. H., Lin, B. H., Tang, M. T., Wu, T. S., Hu, C., Tang, E. Y. T. & Tseng, Y. C., 2021 6月 23, 於: ACS Applied Materials and Interfaces. 13, 24, p. 29212-29221 10 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Semiconductors 100%
  • Ferroelectric materials 92%
  • Oxides 84%
  • X-Ray Absorption Spectroscopy 68%
  • X rays 63%
  5 引文 斯高帕斯（Scopus）

• 低功耗綠能電晶體之陡峭次臨界斜率元件

  朱冠宇, 劉謙, 魏永泰, 林哲群 & 李敏鴻, 2015, 於: 國家奈米元件實驗室奈米通訊. 22, 1, p. 8-12 5 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

• 高性能之低溫多晶矽薄膜電晶體及其應用

  李敏鴻, 陳冠任, 沈正都 & 羅廣禮, 2011, 於: 國家奈米元件實驗室奈米通訊. 18, 1, p. 24-29 6 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

• 軟性顯示器之矽基薄膜電晶體元件技術介紹與發展

  李敏鴻 & 翁偲傑, 2008, 於: Information Display. 11, p. 70-78 9 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

• 軟性顯示器之開發與進展

  李敏鴻, 2007, 於: 國家奈米元件實驗室奈米通訊. 14, 1, p. 35-41 7 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

• 軟性顯示器之開發與進展

  李敏鴻, 2007, 於: 國家奈米元件實驗室奈米通訊. 14, 2, p. 35-41 7 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

• 軟性顯示器用矽基薄膜電晶體元件技術發展

  李敏鴻 & 吳東翰, 2011, 於: Information Display. 21, p. 26-34 9 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審