• 1868 引文
  • 25 h-指數
19982020

每年研究成果

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研究成果

篩選
文章
2020

Correlation between ferroelectricity and nitrogen incorporation of undoped hafnium dioxide thin films

Luo, J. D., Yeh, Y. T., Lai, Y. Y., Wu, C. F., Chung, H. T., Li, Y. S., Chuang, K. C., Li, W. S., Chen, P. G., Lee, M. H. & Cheng, H. C., 2020 六月, 於 : Vacuum. 176, 109317.

研究成果: 雜誌貢獻文章

The Demonstration of 3-D Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 Thermoelectric Devices by Ionized Sputter System

Liao, M. H., Huang, K. C., Su, W. J., Chen, S. C. & Lee, M. H., 2020 一月, 於 : IEEE Transactions on Electron Devices. 67, 1, p. 406-408 3 p., 8906168.

研究成果: 雜誌貢獻文章

The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance

Liao, M. H., Lu, P. Y., Su, W. J., Chen, S. C., Hung, H. T., Kao, C. R., Pu, W. C., Chen, C. C. A. & Lee, M. H., 2020 五月, 於 : IEEE Transactions on Electron Devices. 67, 5, p. 2205-2207 3 p., 9042868.

研究成果: 雜誌貢獻文章

2019

Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs

Chen, K. T., Chou, Y. C., Siang, G. Y., Chen, H. Y., Lo, C., Liao, C. Y., Chang, S. T. & Lee, M. H., 2019 七月 1, 於 : Applied Physics Express. 12, 7, 071003.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Ferroelectric HfZrO2 FETs for steep switch onset

Chen, K. T., Liao, C. Y., Chen, H. Y., Lo, C., Siang, G. Y., Lin, Y. Y., Tseng, Y. J., Chang, C., Chueh, C. Y., Yang, Y. J., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2019 七月 15, 於 : Microelectronic Engineering. 215, 110991.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

Luo, J. D., Zhang, H. X., Wang, Z. Y., Gu, S. S., Yeh, Y. T., Chung, H. T., Chuang, K. C., Liao, C. Y., Li, W. S., Li, Y. S., Li, K. S., Lee, M. H. & Cheng, H. C., 2019 一月 1, 於 : Japanese Journal of Applied Physics. 58, SD, SDDE07.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications

Chen, K. T., Chen, H. Y., Liao, C. Y., Siang, G. Y., Lo, C., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2019 三月, 於 : IEEE Electron Device Letters. 40, 3, p. 399-402 4 p., 8630859.

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators

Liao, M. H., Wu, C. C., Su, W. J., Chen, S. C. & Lee, M. H., 2019 十月, 於 : IEEE Transactions on Electron Devices. 66, 10, p. 4478-4480 3 p., 8818614.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)
2018

Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Chen, K. T., Gu, S. S., Wang, Z. Y., Liao, C. Y., Chou, Y. C., Hong, R. C., Chen, S. Y., Chen, H. Y., Siang, G. Y., Le, J., Chen, P. G., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2018 八月 3, (接受/付印) 於 : IEEE Journal of the Electron Devices Society.

研究成果: 雜誌貢獻文章

開啟存取
5 引文 斯高帕斯(Scopus)

Steep switching of In0.18 Al0.82 N/AlN/GaN MIS-HEMT (metal insulator semiconductor high electron mobility transistors) on si for sensor applications

Chen, P. G., Chen, K. T., Tang, M., Wang, Z. Y., Chou, Y. C. & Lee, M. H., 2018 九月, 於 : Sensors (Switzerland). 18, 9, 2795.

研究成果: 雜誌貢獻文章

開啟存取

The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors

Lien, C., Hsieh, C. F., Wu, H. S., Wu, T. C., Wei, S. J., Chu, Y. H., Liao, M. H. & Lee, M. H., 2018 十一月, 於 : IEEE Transactions on Electron Devices. 65, 11, p. 4834-4838 5 p., 8466023.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices

Liao, M. H., Huang, K. C., Tsai, F. A., Liu, C. Y., Lien, C. & Lee, M. H., 2018 一月 1, 於 : AIP Advances. 8, 1, 015020.

研究成果: 雜誌貢獻文章

7 引文 斯高帕斯(Scopus)
2017

Hidden Antipolar Order Parameter and Entangled Néel-Type Charged Domain Walls in Hybrid Improper Ferroelectrics

Lee, M. H., Chang, C. P., Huang, F. T., Guo, G. Y., Gao, B., Chen, C. H., Cheong, S. W. & Chu, M. W., 2017 十月 10, 於 : Physical Review Letters. 119, 15, 157601.

研究成果: 雜誌貢獻文章

開啟存取
17 引文 斯高帕斯(Scopus)

The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect

Liao, M. H., Huang, H. Y., Tsai, F. A., Chuang, C. C., Hsu, M. H., Lee, C. C., Lee, M. H., Lien, C., Hsieh, C. F., Wu, T. C., Wu, H. S. & Yao, C. W., 2017 六月 1, 於 : Vacuum. 140, p. 63-65 3 p.

研究成果: 雜誌貢獻文章

2016

Divergent dielectric characteristics in cascaded high-K gate stacks with reverse gradient bandgap structures

Tsai, M. C., Cheng, P. H., Lee, M-H., Lin, H. C. & Chen, M. J., 2016 五月 26, 於 : Journal of Physics D: Applied Physics. 49, 26, 265108.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Tsai, M. C., Lee, M. H., Kuo, C. L., Lin, H. C. & Chen, M. J., 2016 十一月 30, 於 : Applied Surface Science. 387, p. 274-279 6 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Metal insulator semiconductor field effect transistors with thin strained Ge film

Chen, K. T., He, R. Y., Chen, C. W., Tu, W. H., Kao, C. Y., Chang, S. T. & Lee, M. H., 2016 十二月 1, 於 : Thin Solid Films. 620, p. 197-200 4 p.

研究成果: 雜誌貢獻文章

Morphology control and characteristics of ZnO/ZnS nanorod arrays synthesised by microwave-assisted heating

Tsai, M. K., Huang, W., Hu, S. Y., Lee, J. W., Lee, Y. C., Lee, M-H. & Shen, J. L., 2016 四月 1, 於 : Micro and Nano Letters. 11, 4, p. 192-195 4 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack

Liu, C., Chen, P. G., Xie, M. J., Liu, S. N., Lee, J. W., Huang, S. J., Liu, S., Chen, Y. S., Lee, H. Y., Liao, M. H., Chen, P. S. & Lee, M. H., 2016 四月, 於 : Japanese Journal of Applied Physics. 55, 4, 04EB08.

研究成果: 雜誌貢獻文章

13 引文 斯高帕斯(Scopus)
2015

Characteristics of controllable-shape well-aligned zinc oxide nanorods synthesized by microwave-assisted heating

Tsai, M. K., Huang, W., Hu, S. Y., Lee, Y. C., Lee, J. W., Lee, M-H. & Shen, J. L., 2015 十一月 1, 於 : Micro and Nano Letters. 10, 11, p. 630-632 3 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Double nitridation of crystalline ZrO 2 /Al 2 O 3 buffer gate stack with high capacitance, low leakage and improved thermal stability

Huang, J. J., Tsai, Y. J., Tsai, M. C., Lee, M. H. & Chen, M. J., 2015 三月 1, 於 : Applied Surface Science. 330, p. 221-227 7 p.

研究成果: 雜誌貢獻文章

6 引文 斯高帕斯(Scopus)

Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

Lee, M. H., Wei, Y. T., Liu, C., Huang, J. J., Tang, M., Chueh, Y. L., Chu, K. Y., Chen, M. J., Lee, H. Y., Chen, Y. S., Lee, L. H. & Tsai, M. J., 2015 七月 1, 於 : IEEE Journal of the Electron Devices Society. 3, 4, p. 377-381 5 p., 7110513.

研究成果: 雜誌貢獻文章

40 引文 斯高帕斯(Scopus)

Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Huang, J. J., Tsai, Y. J., Tsai, M. C., Huang, L. T., Lee, M. H. & Chen, M. J., 2015 一月 1, 於 : Applied Surface Science. 324, p. 662-668 7 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Indium-based ternary barrier high-electron-mobility transistors on Si substrate with high ON/OFF ratio for power applications

Chen, P. G., Tang, M. & Lee, M-H., 2015 三月 1, 於 : IEEE Electron Device Letters. 36, 3, p. 259-261 3 p., 7005421.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

Lee, M. H., Wei, Y. T., Chu, K. Y., Huang, J. J., Chen, C. W., Cheng, C. C., Chen, M. J., Lee, H. Y., Chen, Y. S., Lee, L. H. & Tsai, M. J., 2015 四月 1, 於 : IEEE Electron Device Letters. 36, 4, p. 294-296 3 p., 7038127.

研究成果: 雜誌貢獻文章

92 引文 斯高帕斯(Scopus)

Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

Lee, M. H., Hsu, S. M., Shen, J. D. & Liu, C., 2015 四月 20, 於 : Microelectronic Engineering. 138, p. 77-80 4 p.

研究成果: 雜誌貢獻文章

15 引文 斯高帕斯(Scopus)

低功耗綠能電晶體之陡峭次臨界斜率元件

朱冠宇, 劉謙, 魏永泰, 林哲群 & 李敏鴻, 2015, 於 : 國家奈米元件實驗室奈米通訊. 22, 1, p. 8-12 5 p.

研究成果: 雜誌貢獻文章

2014
3 引文 斯高帕斯(Scopus)

Concomitant charge-density-wave and unit-cell-doubling structural transitions in Dy5Ir4Si10

Lee, M-H., Chen, C. H., Tseng, C. M., Lue, C. S., Kuo, Y. K., Yang, H. D. & Chu, M. W., 2014 五月 29, 於 : Physical Review B - Condensed Matter and Materials Physics. 89, 19, 195142.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Enhancement of electrical characteristics and reliability in crystallized ZrO 2 gate dielectrics treated with in-situ atomic layer doping of nitrogen

Huang, J. J., Huang, L. T., Tsai, M. C., Lee, M. H. & Chen, M. J., 2014 六月 30, 於 : Applied Surface Science. 305, p. 214-220 7 p.

研究成果: 雜誌貢獻文章

9 引文 斯高帕斯(Scopus)

Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

Chen, P. G., Wei, Y. T., Tang, M. & Lee, M. H., 2014 八月, 於 : IEEE Transactions on Electron Devices. 61, 8, p. 3014-3017 4 p., 6845344.

研究成果: 雜誌貢獻文章

12 引文 斯高帕斯(Scopus)

Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

Lee, M. H., Wei, Y. T., Lin, J. C., Chen, C. W., Tu, W. H. & Tang, M., 2014 十月 1, 於 : AIP Advances. 4, 10, 107117.

研究成果: 雜誌貢獻文章

29 引文 斯高帕斯(Scopus)

Impact of self-complementary resistance switch induced by over-Reset energy on the memory reliability of hafnium oxide based resistive random access memory

Lee, H. Y., Chen, Y. S., Chen, P. S., Tsai, C. H., Gu, P. Y., Wu, T. Y., Tsai, K. H., Rahaman, S. Z., Chen, F., Tsai, M. J., Lee, M. H. & Ku, T. K., 2014 八月, 於 : Japanese Journal of Applied Physics. 53, 8 SPEC. ISSUE 1, 08LE01.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors

Lee, Y. J., Yang, Z. P., Chen, P. G., Hsieh, Y. A., Yao, Y. C., Liao, M. H., Lee, M. H., Wang, M. T. & Hwang, J. M., 2014 十月 20, 於 : Optics Express. 22, 21, p. A1589-A1595

研究成果: 雜誌貢獻文章

31 引文 斯高帕斯(Scopus)

Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

Lee, M. H., Luo, J. D., Cheng, C. C., Huang, J. S., Chueh, Y. L., Chen, C. W., Wu, T. Y., Chen, Y. S., Lee, H. Y., Chen, F. & Tsai, M. J., 2014 八月, 於 : Japanese Journal of Applied Physics. 53, 8 SPEC. ISSUE 1, 08LE03.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)
2013

Characterization of silicon-carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors

Hsieh, B. F., Chang, S. T. & Lee, M. H., 2013 二月 1, 於 : Thin Solid Films. 529, p. 444-448 5 p.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)
8 引文 斯高帕斯(Scopus)

Current enhancement of green transistors compared with conventional tunnel field-effect transistors

Lee, M. H., Lin, J. C., Kao, C. Y. & Chen, C. W., 2013 四月 1, 於 : Japanese Journal of Applied Physics. 52, 4 PART 2, 04CC27.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)
10 引文 斯高帕斯(Scopus)

Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments

Huang, L. T., Chang, M. L., Huang, J. J., Kuo, C. L., Lin, H. C., Liao, M. H., Lee, M. H. & Chen, M. J., 2013 二月 6, 於 : Journal of Physics D: Applied Physics. 46, 5, 055103.

研究成果: 雜誌貢獻文章

7 引文 斯高帕斯(Scopus)
8 引文 斯高帕斯(Scopus)

Hetero-tunnel field-effect-transistors with epitaxially grown germanium on silicon

Lee, M. H., Lin, J. C. & Kao, C. Y., 2013 七月 15, 於 : IEEE Transactions on Electron Devices. 60, 7, p. 2423-2427 5 p., 6527300.

研究成果: 雜誌貢獻文章

14 引文 斯高帕斯(Scopus)

Improvement in electrical characteristics of HfO 2 gate dielectrics treated by remote NH 3 plasma

Huang, L. T., Chang, M. L., Huang, J. J., Lin, H. C., Kuo, C. L., Lee, M. H., Liu, C. W. & Chen, M. J., 2013 二月 1, 於 : Applied Surface Science. 266, p. 89-93 5 p.

研究成果: 雜誌貢獻文章

8 引文 斯高帕斯(Scopus)
7 引文 斯高帕斯(Scopus)
1 引文 斯高帕斯(Scopus)

The fabrication and the reliability of poly-Si MOSFETs using ultra-thin high-K/metal-gate stack

Lee, M. H. & Chen, K. J., 2013 一月 1, 於 : Solid-State Electronics. 79, p. 244-247 4 p.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

Cheng, S. Y., Lee, M-H., Chang, S. T., Lin, C. Y., Chen, K. T. & Hsieh, B. F., 2013 十月 1, 於 : Thin Solid Films. 544, p. 487-490 4 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)
2012

High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

Kao, C. H., Liu, K. C., Lee, M. H., Cheng, S. N., Huang, C. H. & Lin, W. K., 2012 二月 1, 於 : Thin Solid Films. 520, 8, p. 3402-3405 4 p.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

Nickel Schottky junction on epi-Ge for strained Ge metal-oxide- semiconductor field-effect transistors source/drain engineering

Lee, M. H., Hsieh, B. F., Chang, S. T. & Lee, S. W., 2012 二月 1, 於 : Thin Solid Films. 520, 8, p. 3379-3381 3 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)