• 1868 引文
  • 25 h-指數
19982020

每年研究成果

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研究成果

篩選
會議貢獻
2020

Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

Chen, K. T., Lo, C., Lin, Y. Y., Chueh, C. Y., Chang, C., Siang, G. Y., Tseng, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. H., Liang, H., Chiang, S. H., Liu, J. H., Lin, Y. Y., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Liao, M. H., Chang, S. T. 及其他2, Tseng, Y. Y. & Lee, M. H., 2020 四月, 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9129088. (IEEE International Reliability Physics Symposium Proceedings; 卷 2020-April).

研究成果: 書貢獻/報告類型會議貢獻

2019

3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Lin, Y. D., Tang, Y. T., Sheu, S. S., Hou, T. H., Lo, W. C., Lee, M. H., Chang, M. F., King, Y. C., Lin, C. J., Lee, H. Y., Yeh, P. C., Yang, H. Y., Yeh, P. S., Wang, C. Y., Su, J. W. & Li, S. H., 2019 十二月, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993504. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 十二月, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December).

研究成果: 書貢獻/報告類型會議貢獻

Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

Lee, M. H., Chen, K. T., Liao, C. Y., Gu, S. S., Siang, G. Y., Chou, Y. C., Chen, H. Y., Le, J., Hong, R. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Tang, M., Lin, Y. D., Lee, H. Y., Li, K. S. & Liu, C. W., 2019 一月 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 31.8.1-31.8.4 8614510. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

研究成果: 書貢獻/報告類型會議貢獻

6 引文 斯高帕斯(Scopus)

Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode

Chen, K. T., Liao, C. Y., Lo, C., Chen, H. Y., Siang, G. Y., Liu, S., Chang, S. C., Liao, M. H., Chang, S. T. & Lee, M. H., 2019 三月, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 62-64 3 p. 8731272. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

研究成果: 書貢獻/報告類型會議貢獻

3 引文 斯高帕斯(Scopus)

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Li, K. S., Wei, Y. J., Chen, Y. J., Chiu, W. C., Chen, H. C., Lee, M. H., Chiu, Y. F., Hsueh, F. K., Wu, B. W., Chen, P. G., Lai, T. Y., Chen, C. C., Shieh, J. M., Yeh, W. K., Salahuddin, S. & Hu, C., 2019 一月 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 31.7.1-31.7.4 8614521. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

研究成果: 書貢獻/報告類型會議貢獻

4 引文 斯高帕斯(Scopus)
2018

Ferroelectric Al:HfO2 negative capacitance FETs

Lee, M. H., Chen, P. G., Fan, S. T., Chou, Y. C., Kuo, C. Y., Tang, C. H., Chen, H. H., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Chen, K. T., Chang, S. T., Liao, M. H., Li, K. S. & Liu, C. W., 2018 一月 23, 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., p. 23.3.1-23.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: 書貢獻/報告類型會議貢獻

10 引文 斯高帕斯(Scopus)

Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

Lee, M. H., Kuo, C. Y., Tang, C. H., Chen, H. H., Liao, C. Y., Hong, R. C., Gu, S. S., Chou, Y. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Liao, M. H. & Li, K. S., 2018 七月 26, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 271-273 3 p. 8421475. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

研究成果: 書貢獻/報告類型會議貢獻

Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT

Chen, P. G., Chou, Y. C., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Tang, M., Liao, M. H. & Lee, M. H., 2018 六月 22, Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

研究成果: 書貢獻/報告類型會議貢獻

The Design of High Performance Si/SiGe-Based Tunneling FET: Strategies and Solutions

Chung, S. S., Hsieh, E. R., Zhao, Y. B., Lee, J. W. & Lee, M. H., 2018 十月 9, 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc., 8487104. (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018).

研究成果: 書貢獻/報告類型會議貢獻

2017

Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)

Lee, M. H., Liao, M. H., Tai, C. W. & Chang, S. T., 2017 一月 17, FTC 2016 - Proceedings of Future Technologies Conference. Institute of Electrical and Electronics Engineers Inc., p. 13298-13301 4 p. 7821775. (FTC 2016 - Proceedings of Future Technologies Conference).

研究成果: 書貢獻/報告類型會議貢獻

Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

Lee, M-H., Chen, P. G., Fan, S. T., Kuo, C. Y., Chen, H. H., Gu, S. S., Chou, Y. C., Tang, C. H., Hong, R. C., Wang, Z. Y., Liao, M. H., Li, K. S., Chen, M. C. & Liu, C. W., 2017 六月 7, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 7942466. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

Lee, M. H., Fan, S. T., Tang, C. H., Chen, P. G., Chou, Y. C., Chen, H. H., Kuo, J. Y., Xie, M. J., Liu, S. N., Liao, M. H., Jong, C. A., Li, K. S., Chen, M. C. & Liu, C. W., 2017 一月 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 12.1.1-12.1.4 7838400. (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: 書貢獻/報告類型會議貢獻

49 引文 斯高帕斯(Scopus)

Plasmonically induced coherent and polarized random laser emissions in colloidal CdSe/ZnS quantum dots with ellipsoidal Ag Nanoparticles

Yao, Y. C., Yang, Z. P., Haung, J. Y., Lee, M. H. & Lee, Y. J., 2017 十月 25, 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings; 卷 2017-January).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

The guideline on designing face-tunneling FET for large-scale-device applications in IoT

Hsieh, E. R., Lee, J. W., Lee, M. H. & Chung, S. S., 2017 十二月 29, 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., p. 3-4 2 p. 8242268. (2017 Silicon Nanoelectronics Workshop, SNW 2017; 卷 2017-January).

研究成果: 書貢獻/報告類型會議貢獻

2016

A pilot study of students' perceptions of collaborative knowledge building in 21st century learning with their knowledge building behaviors

Tsai, P. S., Chen, Y. Y., Liang, J. C., Chai, C. S., Lee, M. H. & Tsai, C. C., 2016 十一月 28, Proceedings - IEEE 16th International Conference on Advanced Learning Technologies, ICALT 2016. Spector, J. M., Tsai, C-C., Huang, R., Resta, P., Sampson, D. G., Kinshuk & Chen, N-S. (編輯). Institute of Electrical and Electronics Engineers Inc., p. 354-356 3 p. 7756995. (Proceedings - IEEE 16th International Conference on Advanced Learning Technologies, ICALT 2016).

研究成果: 書貢獻/報告類型會議貢獻

Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers

Hsu, S. M., Li, Y. S., Tu, M. S., He, J. C., Chiu, I. C., Chen, P. G., Lee, M. H., Chen, J. Z. & Cheng, I. C., 2016 八月 15, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., p. 153-156 4 p. 7543648. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

研究成果: 書貢獻/報告類型會議貢獻

On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance

Chiu, Y. C., Chang, C. Y., Yen, S. S., Fan, C. C., Hsu, H. H., Cheng, C. H., Chen, P. C., Chen, P. W., Liou, G. L., Lee, M. H., Liu, C. & Chou, W. C., 2016 九月 22, 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., p. MY71-MY75 7574623. (IEEE International Reliability Physics Symposium Proceedings; 卷 2016-September).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

Reliable doping technique for WSe2 by W:Ta co-sputtering process

Chien, P. Y., Zhang, M., Huang, S. C., Lee, M. H., Hsu, H. R., Ho, Y. T., Chu, Y. C., Jong, C. A. & Woo, J., 2016 九月 27, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., p. 58-59 2 p. 7577984. (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

研究成果: 書貢獻/報告類型會議貢獻

3 引文 斯高帕斯(Scopus)
2015

Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms

Chiu, Y. C., Chang, C. Y., Hsu, H. H., Cheng, C-H. & Lee, M-H., 2015 一月 1, 2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc., 卷 2015-May. p. MY31-MY35 7112817

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Chiu, Y. C., Cheng, C-H., Fan, C. C., Chen, P. C., Chang, C. Y., Lee, M-H., Liu, C., Yen, S. S. & Hsu, H. H., 2015 八月 3, 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., p. 41-42 2 p. 7175543. (Device Research Conference - Conference Digest, DRC; 卷 2015-August).

研究成果: 書貢獻/報告類型會議貢獻

Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance

Chiu, Y. C., Cheng, C. H., Chang, C. Y., Lee, M-H., Hsu, H. H. & Yen, S. S., 2015 八月 25, 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T184-T185 7223671. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2015-August).

研究成果: 書貢獻/報告類型會議貢獻

30 引文 斯高帕斯(Scopus)

Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off <0.2V, and hysteresis-free strategies

Lee, M. H., Chen, P. G., Liu, C., Chu, K. Y., Cheng, C. C., Xie, M. J., Liu, S. N., Lee, J. W., Huang, S. J., Liao, M. H., Tang, M., Li, K. S. & Chen, M. C., 2015 二月 16, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., p. 22.5.1-22.5.4 7409759. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2016-February).

研究成果: 書貢獻/報告類型會議貢獻

53 引文 斯高帕斯(Scopus)

Sub-60mV-swing negative-capacitance FinFET without hysteresis

Li, K. S., Chen, P. G., Lai, T. Y., Lin, C. H., Cheng, C. C., Chen, C. C., Wei, Y. J., Hou, Y. F., Liao, M. H., Lee, M. H., Chen, M. C., Sheih, J. M., Yeh, W. K., Yang, F. L., Salahuddin, S. & Hu, C., 2015 二月 16, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., p. 22.6.1-22.6.4 7409760. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2016-February).

研究成果: 書貢獻/報告類型會議貢獻

129 引文 斯高帕斯(Scopus)
2014

Structure design of IGZO TFTs with stress analysis for flexible applications using finite element method

Lee, M. H., Hsu, S. M., Liu, C. & Shen, J. D., 2014 一月 1, 21st International Display Workshops 2014, IDW 2014. Society for Information Display, p. 1479-1482 4 p. (21st International Display Workshops 2014, IDW 2014; 卷 2).

研究成果: 書貢獻/報告類型會議貢獻

2013

Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification

Lee, M. H., Lin, J. C., Wei, Y. T., Chen, C. W., Tu, W. H., Zhuang, H. K. & Tang, M., 2013 十二月 1, 2013 IEEE International Electron Devices Meeting, IEDM 2013. p. 4.5.1-4.5.4 6724561. (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: 書貢獻/報告類型會議貢獻

19 引文 斯高帕斯(Scopus)
2011

Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending

Lee, M. H., Chang, S. T., Tai, C. W., Shen, J. D. & Lee, C. C., 2011 十二月 1, Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. p. 2891-2893 3 p. 6186550. (Conference Record of the IEEE Photovoltaic Specialists Conference).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

P-type tunneling FET on Si (110) substrate with anisotropic effect

Lee, M-H., Kao, C. Y., Yang, C. L. & Lee, C. H., 2011 十二月 1, 69th Device Research Conference, DRC 2011 - Conference Digest. p. 207-208 2 p. 5994500. (Device Research Conference - Conference Digest, DRC).

研究成果: 書貢獻/報告類型會議貢獻

Reliability of ambipolar switching poly-Si diodes for cross-point memory applications

Lee, M. H., Kao, C. Y., Yang, C. L., Chen, Y. S., Lee, H. Y., Chen, F. & Tsai, M. J., 2011 十二月 1, 69th Device Research Conference, DRC 2011 - Conference Digest. p. 89-90 2 p. 5994428. (Device Research Conference - Conference Digest, DRC).

研究成果: 書貢獻/報告類型會議貢獻

8 引文 斯高帕斯(Scopus)

The fabrication of poly-Si MOSFETs using ultra-thin high-K/metal-gate stack for monolithic 3D integrated circuits technology applications

Wu, T. H. & Lee, M-H., 2011 十二月 1, 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 6135219. (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

研究成果: 書貢獻/報告類型會議貢獻

2010

Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain

Lee, M. H., Chang, S. T., Huang, J. J., Hu, G. R., Huang, Y. S. & Lee, C. C., 2010 五月 5, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. p. 654-655 2 p. 5424674. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

研究成果: 書貢獻/報告類型會議貢獻

Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain

Hsieh, B. F., Chang, S. T. & Lee, M. H., 2010 五月 5, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. p. 606-607 2 p. 5424749. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

研究成果: 書貢獻/報告類型會議貢獻

P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

Lee, M. H., Lu, S. H., Chang, S. T., Tang, M., Huang, J. J., Ho, K. Y., Huang, Y. S. & Lee, C. C., 2010 十二月 1, 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. p. 1636-1639 4 p. (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010; 卷 3).

研究成果: 書貢獻/報告類型會議貢獻

The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil

Chiu, I. C., Huang, J. J., Chen, Y. P., Cheng, I. C., Chen, J. Z. & Lee, M. H., 2010 十二月 1, Thin Film Transistors 10, TFT 10. 5 編輯 p. 65-69 5 p. (ECS Transactions; 卷 33, 編號 5).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)
2009

The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics

Lee, M-H., Chang, S. T., Weng, S. C., Liu, W. H., Chen, K. J., Ho, K. Y., Liao, M. H., Huang, J. J. & Hu, G. R., 2009 十一月 12, 2009 IEEE International Reliability Physics Symposium, IRPS 2009. p. 956-959 4 p. 5173388. (IEEE International Reliability Physics Symposium Proceedings).

研究成果: 書貢獻/報告類型會議貢獻

2008

Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits

Liu, Y. T., Lee, M-H., Chen, H. T., Huang, C. F., Peng, C. Y., Lee, L. S. & Kao, M. J., 2008 十二月 1, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 1207-1210 4 p. 4734764. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)
2007

Strained-Si:C-source/drain NMOSFETs for channel strain enhancement

Lee, M. H., Chang, S. T., Huang, C. F., Maikap, S., Shen, K. W., Syu, R. S. & Liu, Y. T., 2007 十二月 1, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422399. (2007 International Semiconductor Device Research Symposium, ISDRS).

研究成果: 書貢獻/報告類型會議貢獻

The operation of a-Si:H TFTs flexible electronics on plastic substrate

Lee, M-H., Chang, S. T., Liu, Y. T., Huang, C. F., Ho, K. Y., Chen, P. C., Syu, R. S. & Shen, K. W., 2007 十二月 1, 2007 International Semiconductor Device Research Symposium, ISDRS. 4422331. (2007 International Semiconductor Device Research Symposium, ISDRS).

研究成果: 書貢獻/報告類型會議貢獻

The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application

Liu, Y. T., Chang, S. T., Syu, R. S., Shen, K. W. & Lee, M. H., 2007 十二月 1, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. p. 523-526 4 p. 4450177. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

研究成果: 書貢獻/報告類型會議貢獻

2006

Novel T shape structure PCM and electrical-thermal characteristics

Wang, W. H., Chao, D. S., Chen, Y. C., Lee, C. M., Hsu, H. H., Chuo, Y., Tseng, M. H., Lee, M-H., Chen, W. S., Kao, M. J. & Tsai, M. J., 2006 十二月 1, 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. p. 40-41 2 p. 4016593. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: 書貢獻/報告類型會議貢獻

3 引文 斯高帕斯(Scopus)

Promising a-Si:H TFTs with high mechanical reliability for flexible display

Lee, M-H., Ho, K. Y., Chen, P. C., Cheng, C. C., Chang, S. T., Tang, M., Liao, M. H. & Yeh, Y. H., 2006 十二月 1, 2006 International Electron Devices Meeting Technical Digest, IEDM. 4154186. (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: 書貢獻/報告類型會議貢獻

11 引文 斯高帕斯(Scopus)

The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs

Lee, M. H., Chang, S. T., Maikap, S., Yu, C. Y. & Liu, C. W., 2006 十二月 1, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 卷 2006. 1715972

研究成果: 書貢獻/報告類型會議貢獻

2005

Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate

Yeo, C. C., Lee, M. H., Liu, C. W., Choi, K. J., Lee, T. W. & Cho, B. J., 2005 一月 1, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., p. 107-110 4 p. 1635217. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

研究成果: 書貢獻/報告類型會議貢獻

Novel schottky barrier strained germanium PMOS

Peng, C. Y., Yuan, F., Lee, M. H., Yu, C. Y., Maikap, S., Liao, M. H., Chang, S. T. & Liu, C. W., 2005 十二月 1, 2005 International Semiconductor Device Research Symposium. p. 84-85 2 p. 1595989. (2005 International Semiconductor Device Research Symposium; 卷 2005).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)
2004

Thin Relaxed SiGe Layers for Strained Si CMOS

Chen, P. S., Lee, S. W., Lee, M-H., Liu, C. W. & Tsai, M. J., 2004 十二月 1, 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW. p. 79-82 4 p. (2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW).

研究成果: 書貢獻/報告類型會議貢獻

2001

Oxide roughness enhanced reliability of MOS tunneling diodes

Lin, C. H., Lee, M. H., Hsu, B. C., Chen, K. F., Shie, C. R. & Liu, C. W., 2001 一月 1, 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 46-49 4 p. 984435. (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)
1998

The design of rapid thermal process for large diameter applications [semiconductor wafer processing]

Liu, C. W., Lee, M. H., Chao, C. Y., Chen, C. Y., Yang, C. C. & Chang, Y., 1998 一月 1, 1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998. Institute of Electrical and Electronics Engineers Inc., p. 61-70 10 p. 722653. (1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998).

研究成果: 書貢獻/報告類型會議貢獻