李 敏鴻

研究成果

每年研究成果 1998 2000 2001 2004 2005 2006 2007 2008 2010 2011 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023

• 134 期刊論文
• 62 會議論文篇章
• 14 會議論文
• 2 回顧評介論文
• 1 更多
  • 1 通訊期刊論文

每年研究成果

每年研究成果

搜尋結果

• 期刊論文

  Ferroelectricity of HfZrO₂ in energy landscape with surface potential gain for low-power steep-slope transistors

  Lee, M. H., Wei, Y. T., Liu, C., Huang, J. J., Tang, M., Chueh, Y. L., Chu, K. Y., Chen, M. J., Lee, H. Y., Chen, Y. S., Lee, L. H. & Tsai, M. J., 2015 7月 1, 於: IEEE Journal of the Electron Devices Society. 3, 4, p. 377-381 5 p., 7110513.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  開啟存取

  • Ferroelectricity 100%
  • Antiferroelectricity 74%
  • Surface potential 71%
  • Ferroelectric materials 69%
  • Social Responsibility 62%
  56 引文 斯高帕斯（Scopus）

• Ferroelectric undoped HfO_xcapacitor with symmetric synaptic for neural network accelerator

  Luo, J. D., Lai, Y. Y., Hsiang, K. Y., Wu, C. F., Yeh, Y. T., Chung, H. T., Li, Y. S., Chuang, K. C., Li, W. S., Liao, C. Y., Chen, P. G., Chen, K. N., Lee, M. H. & Cheng, H. C., 2021 3月, 於: IEEE Transactions on Electron Devices. 68, 3, p. 1374-1377 4 p., 9339849.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Ferroelectric materials 100%
  • Capacitor 77%
  • Particle accelerators 76%
  • Plasmas 69%
  • Polarization 56%
  7 引文 斯高帕斯（Scopus）

• Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing

  Chen, P. S., Lee, S. W., Lee, M. H. & Liu, C. W., 2008 7月 30, 於: Applied Surface Science. 254, 19, p. 6076-6080 5 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Buffer layers 100%
  • Strain relaxation 79%
  • Multilayers 67%
  • buffers 59%
  • Multilayer 46%
  3 引文 斯高帕斯（Scopus）

• Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs

  Hua, W. C., Lee, M. H., Chen, P. S., Maikap, S., Liu, C. W. & Chen, K. M., 2004 10月, 於: IEEE Electron Device Letters. 25, 10, p. 693-695 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Flicker Noise 100%
  • Oxides 46%
  • Oxide 29%
  • Interface Trap 22%
  • Trap Density Measurement 20%
  59 引文 斯高帕斯（Scopus）

• Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs

  Chen, P. S., Lee, S. W., Lee, M. H. & Liu, C. W., 2006 4月 1, 於: Semiconductor Science and Technology. 21, 4, p. 479-485 7 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Threading Dislocation 100%
  • Relaxation 66%
  • Dislocation Loop 65%
  • field effect transistors 55%
  • Buffer Solution 46%
  3 引文 斯高帕斯（Scopus）

• Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer

  Lee, S. W., Chueh, Y. L., Chen, L. J., Chou, L. J., Chen, P. S., Lee, M. H., Tsai, M. J. & Liu, C. W., 2005 7月, 於: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 23, 4, p. 1141-1145 5 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Buffer layers 100%
  • Threading Dislocation 98%
  • Misfit Dislocation 97%
  • Substrates 74%
  • Buffer Solution 68%
  3 引文 斯高帕斯（Scopus）

• Hetero-tunnel field-effect-transistors with epitaxially grown germanium on silicon

  Lee, M. H., Lin, J. C. & Kao, C. Y., 2013, 於: IEEE Transactions on Electron Devices. 60, 7, p. 2423-2427 5 p., 6527300.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Tunnel field effect transistors 100%
  • Germanium 91%
  • Field Effect 67%
  • Silicon 53%
  • Tunneling 46%
  15 引文 斯高帕斯（Scopus）

• Hidden Antipolar Order Parameter and Entangled Néel-Type Charged Domain Walls in Hybrid Improper Ferroelectrics

  Lee, M. H., Chang, C. P., Huang, F. T., Guo, G. Y., Gao, B., Chen, C. H., Cheong, S. W. & Chu, M. W., 2017 10月 10, 於: Physical Review Letters. 119, 15, 157601.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  開啟存取

  • domain wall 100%
  • ferroelectricity 61%
  • screening 46%
  • ingredients 27%
  • divergence 23%
  33 引文 斯高帕斯（Scopus）

• High dielectric constant terbium oxide (Tb ₂O ₃) dielectric deposited on strained-Si:C

  Kao, C. H., Liu, K. C., Lee, M. H., Cheng, S. N., Huang, C. H. & Lin, W. K., 2012 2月 1, 於: Thin Solid Films. 520, 8, p. 3402-3405 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Terbium 100%
  • Rapid thermal annealing 80%
  • Gate dielectrics 74%
  • MOS devices 72%
  • terbium 66%
  4 引文 斯高帕斯（Scopus）

• High ge content of SiGe channel pMOSFETs on Si (110) surfaces

  Lee, M. H., Chang, S. T., Maikap, S., Peng, C. Y. & Lee, C. H., 2010 2月, 於: IEEE Electron Device Letters. 31, 2, p. 141-143 3 p., 5371936.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Hole mobility 100%
  • Hole Mobility 71%
  • Drain Current 46%
  • Drain current 38%
  • Compound Mobility 23%
  16 引文 斯高帕斯（Scopus）

• High-performance poly-Si TFTs using ultrathin HfSiO_x gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications

  Lee, M. H., Wu, S. L., Yang, M. J., Chen, K. J., Luo, G. L., Lee, L. S. & Kao, M. J., 2010 8月, 於: IEEE Electron Device Letters. 31, 8, p. 824-826 3 p., 5497075.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Monolithic integrated circuits 100%
  • Gate dielectrics 93%
  • Three dimensional integrated circuits 91%
  • Thin film transistors 83%
  • Polysilicon 75%
  7 引文 斯高帕斯（Scopus）

• Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices

  Wei, J. Y., Maikap, S., Lee, M. H., Lee, C. C. & Liu, C. W., 2006 2月, 於: Solid-State Electronics. 50, 2, p. 109-113 5 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Fermi level 100%
  • Heterojunctions 75%
  • Fermi Level 66%
  • Capacitor 59%
  • Valence bands 51%
  14 引文 斯高帕斯（Scopus）

• Hole mobility enhancement of Si_0.2Ge_0.8 quantum well channel on Si

  Peng, C. Y., Yuan, F., Yu, C. Y., Kuo, P. S., Lee, M. H., Maikap, S., Hsu, C. H. & Liu, C. W., 2007, 於: Applied Physics Letters. 90, 1, 012114.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • hole mobility 100%
  • quantum wells 67%
  • augmentation 53%
  • output 10%
  • defects 9%
  27 引文 斯高帕斯（Scopus）

• Hydrogenated amorphous silicon thin film transistor fabricated on glass and polyimide substrate at 200°C

  Huang, J. J., Lee, M. H., Tsai, C. J. & Yeh, Y. H., 2007 3月 16, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 3 B, p. 1295-1298 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Amorphous silicon 100%
  • Thin film transistors 93%
  • Polyimides 85%
  • polyimides 75%
  • amorphous silicon 67%
  14 引文 斯高帕斯（Scopus）

• Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO₂Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory

  Liao, C. Y., Hsiang, K. Y., Chang, S. H., Chiang, S. H., Hsieh, F. C., Liu, J. H., Liang, H., Luo, Z. F., Lin, C. Y., Chen, L. Y., Hu, V. P. H. & Lee, M. H., 2021, 於: ECS Journal of Solid State Science and Technology. 10, 6, 065015.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Field effect transistors 100%
  • Field Effect 92%
  • Conductance 89%
  • Trajectories 65%
  • Ferroelectric materials 61%
  2 引文 斯高帕斯（Scopus）

• Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

  Huang, J. J., Tsai, Y. J., Tsai, M. C., Huang, L. T., Lee, M. H. & Chen, M. J., 2015 1月 1, 於: Applied Surface Science. 324, p. 662-668 7 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Gate dielectrics 100%
  • Electric properties 74%
  • Crystalline materials 73%
  • Nitrogen 65%
  • Dielectric Material 61%
  4 引文 斯高帕斯（Scopus）

• Impact of self-complementary resistance switch induced by over-Reset energy on the memory reliability of hafnium oxide based resistive random access memory

  Lee, H. Y., Chen, Y. S., Chen, P. S., Tsai, C. H., Gu, P. Y., Wu, T. Y., Tsai, K. H., Rahaman, S. Z., Chen, F., Tsai, M. J., Lee, M. H. & Ku, T. K., 2014 8月, 於: Japanese Journal of Applied Physics. 53, 8 SPEC. ISSUE 1, 08LE01.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Hafnium oxides 100%
  • hafnium oxides 77%
  • endurance 67%
  • random access memory 65%
  • switches 46%
  4 引文 斯高帕斯（Scopus）

• Improvement in electrical characteristics of HfO ₂ gate dielectrics treated by remote NH ₃ plasma

  Huang, L. T., Chang, M. L., Huang, J. J., Lin, H. C., Kuo, C. L., Lee, M. H., Liu, C. W. & Chen, M. J., 2013 2月 1, 於: Applied Surface Science. 266, p. 89-93 5 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Gate dielectrics 100%
  • Plasmas 64%
  • Dielectric Material 61%
  • Photoluminescence 57%
  • Leakage Current 46%
  11 引文 斯高帕斯（Scopus）

• Improvement of capacitance equivalent thickness, leakage current, and interfacial state density based on crystallized high-k dielectrics/nitrided buffer layer gate stacks

  Huang, J. J., Huang, L. T., Tsai, M. C., Lee, M. H. & Chena, M. J., 2013, 於: ECS Journal of Solid State Science and Technology. 2, 12, p. P524-P528

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • High-k dielectric 100%
  • Buffer layers 90%
  • Leakage Current 83%
  • Leakage currents 68%
  • Dielectric Material 56%
  8 引文 斯高帕斯（Scopus）

• Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

  Luo, J. D., Zhang, H. X., Wang, Z. Y., Gu, S. S., Yeh, Y. T., Chung, H. T., Chuang, K. C., Liao, C. Y., Li, W. S., Li, Y. S., Li, K. S., Lee, M. H. & Cheng, H. C., 2019, 於: Japanese Journal of Applied Physics. 58, SD, SDDE07.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Hafnium oxides 100%
  • Atomic layer deposition 86%
  • hafnium oxides 77%
  • Ferroelectric materials 74%
  • Oxide films 70%
  6 引文 斯高帕斯（Scopus）

• Indium-based ternary barrier high-electron-mobility transistors on Si substrate with high ON/OFF ratio for power applications

  Chen, P. G., Tang, M. & Lee, M. H., 2015 3月 1, 於: IEEE Electron Device Letters. 36, 3, p. 259-261 3 p., 7005421.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Indium 100%
  • Epitaxial Growth 93%
  • High electron mobility transistors 88%
  • Dissipation 83%
  • Substrates 54%
  4 引文 斯高帕斯（Scopus）

• In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

  Tsai, M. C., Lee, M. H., Kuo, C. L., Lin, H. C. & Chen, M. J., 2016 11月 30, 於: Applied Surface Science. 387, p. 274-279 6 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Nitridation 100%
  • Gate dielectrics 91%
  • Crystalline materials 67%
  • Dielectric Material 56%
  • Metallizing 55%
  5 引文 斯高帕斯（Scopus）

• Mechanical bending cycles of hydrogenated amorphous silicon layer on plastic substrate by plasma-enhanced chemical vapor deposition for use in flexible displays

  Lee, M. H., Chang, S. T., Wu, Y. C., Tang, M. & Lin, C. Y., 2009 2月, 於: Japanese Journal of Applied Physics. 48, 2, 021301.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Flexible displays 100%
  • Plasma enhanced chemical vapor deposition 93%
  • Amorphous silicon 90%
  • Atomic force microscopy 84%
  • amorphous silicon 60%
  6 引文 斯高帕斯（Scopus）

• Mechanically Strained Strained-Si NMOSFETs

  Maikap, S., Yu, C. Y., Jan, S. R., Lee, M. H. & Liu, C. W., 2004 1月, 於: IEEE Electron Device Letters. 25, 1, p. 40-42 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Drain Current 100%
  • Drain current 98%
  • Strain 90%
  • Lattice mismatch 46%
  • Tensile strain 32%
  24 引文 斯高帕斯（Scopus）

• Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO₂gate stack scaling down

  Liao, C. Y., Lin, C. Y., Lee, Z. X., Hsiang, K. Y., Lou, Z. F., Hu, V. P. H. & Lee, M. H., 2022 12月 19, 於: Applied Physics Letters. 121, 25, 252902.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • field effect transistors 100%
  • scaling 88%
  • low voltage 83%
  • polarity 79%
  • computer aided design 50%
  1 引文 斯高帕斯（Scopus）

• Metal insulator semiconductor field effect transistors with thin strained Ge film

  Chen, K. T., He, R. Y., Chen, C. W., Tu, W. H., Kao, C. Y., Chang, S. T. & Lee, M. H., 2016 12月 1, 於: Thin Solid Films. 620, p. 197-200 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • MISFET devices 100%
  • Nonconductor 58%
  • MIS (semiconductors) 58%
  • Field Effect 51%
  • field effect transistors 41%

• Modified growth of Ge quantum dots using C ₂ H ₄ mediation by ultra-high vacuum chemical vapor deposition

  Lee, S. W., Chen, P. S., Cheng, S. L., Lee, M. H., Chang, H. T., Lee, C. H. & Liu, C. W., 2008 7月 30, 於: Applied Surface Science. 254, 19, p. 6261-6264 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Ultrahigh vacuum 100%
  • mediation 85%
  • Chemical vapor deposition 74%
  • ultrahigh vacuum 63%
  • Chemical Vapour Deposition 57%
  2 引文 斯高帕斯（Scopus）

• Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors

  Lee, Y. J., Yang, Z. P., Chen, P. G., Hsieh, Y. A., Yao, Y. C., Liao, M. H., Lee, M. H., Wang, M. T. & Hwang, J. M., 2014 10月 20, 於: Optics Express. 22, 21, p. A1589-A1595

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  開啟存取

  • metal oxide semiconductors 100%
  • transistors 77%
  • light emitting diodes 77%
  • field effect transistors 76%
  • diodes 73%
  56 引文 斯高帕斯（Scopus）

• Morphology control and characteristics of ZnO/ZnS nanorod arrays synthesised by microwave-assisted heating

  Tsai, M. K., Huang, W., Hu, S. Y., Lee, J. W., Lee, Y. C., Lee, M. H. & Shen, J. L., 2016 4月 1, 於: Micro and Nano Letters. 11, 4, p. 192-195 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Nanorods 100%
  • nanorods 66%
  • Microwaves 59%
  • Nanorod 57%
  • Heating 48%
  5 引文 斯高帕斯（Scopus）

• Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂for High-Density Nonvolatile Memory

  Liao, C. Y., Hsiang, K. Y., Hsieh, F. C., Chiang, S. H., Chang, S. H., Liu, J. H., Lou, C. F., Lin, C. Y., Chen, T. C., Chang, C. S. & Lee, M. H., 2021 4月, 於: IEEE Electron Device Letters. 42, 4, p. 617-620 4 p., 9358194.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Ferroelectric materials 100%
  • Field effect transistors 81%
  • Data storage equipment 46%
  • Nonconductor 42%
  • Error 28%
  31 引文 斯高帕斯（Scopus）

• Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

  Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Lin, C. Y., Tseng, Y. J., Tseng, H. C., Li, Z. X., Ray, W. C., Chang, F. S., Wang, C. C., Chen, T. C., Chang, C. S. & Lee, M. H., 2022 6月 1, 於: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 69, 6, p. 2214-2221 8 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Ferroelectric materials 100%
  • Field effect transistors 81%
  • Electric fields 69%
  • field effect transistors 59%
  • Data storage equipment 46%
  2 引文 斯高帕斯（Scopus）

• Nickel Schottky junction on epi-Ge for strained Ge metal-oxide- semiconductor field-effect transistors source/drain engineering

  Lee, M. H., Hsieh, B. F., Chang, S. T. & Lee, S. W., 2012 2月 1, 於: Thin Solid Films. 520, 8, p. 3379-3381 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Laser Annealing 100%
  • laser annealing 67%
  • MOSFET devices 64%
  • metal oxide semiconductors 56%
  • Field Effect 55%
  3 引文 斯高帕斯（Scopus）

• Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications

  Lee, M. H., Luo, J. D., Cheng, C. C., Huang, J. S., Chueh, Y. L., Chen, C. W., Wu, T. Y., Chen, Y. S., Lee, H. Y., Chen, F. & Tsai, M. J., 2014 8月, 於: Japanese Journal of Applied Physics. 53, 8 SPEC. ISSUE 1, 08LE03.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Varistors 100%
  • selectors 92%
  • Thermionic emission 62%
  • varistors 61%
  • Data storage equipment 42%
  1 引文 斯高帕斯（Scopus）

• Non-Volatile Ferroelectric FETs Using 5-nm Hf_0.5Zr_0.5O₂ with High Data Retention and Read Endurance for 1T Memory Applications

  Chen, K. T., Chen, H. Y., Liao, C. Y., Siang, G. Y., Lo, C., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2019 3月, 於: IEEE Electron Device Letters. 40, 3, p. 399-402 4 p., 8630859.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Ferroelectric materials 100%
  • Field effect transistors 81%
  • Durability 61%
  • Voltage 54%
  • Data storage equipment 46%
  67 引文 斯高帕斯（Scopus）

• Novel methods to incorporate deuterium in the MOS structures

  Lee, M. H., Lin, C. H. & Liu, C. W., 2001 11月, 於: IEEE Electron Device Letters. 22, 11, p. 519-521 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Deuterium 100%
  • Deuterium(.) 63%
  • Oxides 39%
  • Oxide 18%
  • Interface State 17%
  7 引文 斯高帕斯（Scopus）

• Novel photodetector using MOS tunneling structures

  Liu, C. W., Liu, W. T., Lee, M. H., Kuo, W. S. & Hsu, B. C., 2000 6月, 於: IEEE Electron Device Letters. 21, 6, p. 307-309 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Photodetectors 100%
  • Tunneling 78%
  • Oxides 66%
  • Inversion layers 54%
  • Dark currents 46%
  69 引文 斯高帕斯（Scopus）

• Optimal Ge profile design for base transit time of Si/SiGe HBTs

  Chang, S. T., Liu, Y. H., Lee, M. H., Lu, S. C. & Tsai, M. J., 2005 2月, 於: Materials Science in Semiconductor Processing. 8, 1-3 SPEC. ISS., p. 289-294 6 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Heterojunction bipolar transistors 100%
  • transit time 94%
  • accumulators 83%
  • Velocity 70%
  • Electron mobility 66%
  3 引文 斯高帕斯（Scopus）

• P-103: Redistributed deep states created by mechanical bending to improve the electrical reliability of a-Si:H TFTs on flexible substrates

  Lee, M. H., Lu, S. H., Chang, S. T., Tang, M., Huang, J. J., Ho, K. Y., Huang, Y. S. & Lee, C. C., 2010 5月, 於: Digest of Technical Papers - SID International Symposium. 41 1, p. 1636-1639 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Flexible displays 100%
  • Drain current 83%
  • Substrates 46%
  • Costs 25%

• Phase field modeling of convective and morphological instability during directional solidification of an alloy

  Lan, C. W., Lee, M. H., Chuang, M. H. & Shih, C. J., 2006 10月 1, 於: Journal of Crystal Growth. 295, 2, p. 202-208 7 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Solidification 100%
  • Buoyancy 66%
  • Wavelength 64%
  • Alloy 63%
  • Gravity 51%
  30 引文 斯高帕斯（Scopus）

• Phase field modeling of excimer laser crystallization of thin silicon films on amorphous substrates

  Shih, C. J., Fang, C. H., Lu, C. C., Wang, M. H., Lee, M. H. & Lan, C. W., 2006, 於: Journal of Applied Physics. 100, 5, 053504.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • silicon films 100%
  • excimer lasers 93%
  • crystallization 71%
  • Gibbs equations 23%
  • energy conservation 17%
  11 引文 斯高帕斯（Scopus）

• p-Type tunneling field-effect transistors on (100)- and (110)-oriented Si substrates

  Lee, M. H., Hsieh, B. F., Wu, T. H. & Chang, S. T., 2011 10月, 於: Japanese Journal of Applied Physics. 50, 10 PART 2

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Field effect transistors 100%
  • field effect transistors 73%
  • Substrates 66%
  • High-k dielectric 36%
  • Crystal orientation 32%

• P-Type tunneling transistors with polycrystalline silicon by sequential lateral solidification growth technique

  Lee, M. H. & Weng, S. C., 2012 2月, 於: Japanese Journal of Applied Physics. 51, 2 PART 2, 02BJ13.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Polysilicon 100%
  • Solidification 84%
  • solidification 79%
  • Transistors 73%
  • transistors 69%
  17 引文 斯高帕斯（Scopus）

• Quantitative phase field simulation of deep cells in directional solidification of an alloy

  Lan, C. W., Shih, C. J. & Lee, M. H., 2005 5月, 於: Acta Materialia. 53, 8, p. 2285-2294 10 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Solidification 100%
  • Wavelength 79%
  • Alloy 63%
  • Simulation 57%
  • Cells 44%
  33 引文 斯高帕斯（Scopus）

• Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

  Chen, K. T., Liao, C. Y., Hsiang, K. Y., Chang, S. H., Hsieh, F. J., Liang, H., Chiang, S. H., Liu, J. H., Li, K. S., Chang, S. T. & Lee, M. H., 2020 10月, 於: Semiconductor Science and Technology. 35, 12, 125011.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Ferroelectric materials 100%
  • Field Effect 75%
  • Polarization 69%
  • Polycrystalline Solid 67%
  • Dimension 57%
  2 引文 斯高帕斯（Scopus）

• Reliability improvement of a-Si:H thin film transistors on plastic substrate with saturation in deep state after multiple bending cycles

  Lee, M. H., Chen, P. G. & Hsu, C. C., 2013 10月 1, 於: Thin Solid Films. 544, p. 103-106 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Thin film transistors 100%
  • transistors 62%
  • plastics 60%
  • Drain Current 60%
  • Flexible displays 59%
  1 引文 斯高帕斯（Scopus）

• Reliability improvement of rapid thermal oxide using gas switching

  Lee, M. H., Yu, C. Y., Yuan, F., Chen, K. F., Lai, C. C. & Liu, C. W., 2003 11月, 於: IEEE Transactions on Semiconductor Manufacturing. 16, 4, p. 656-659 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • ramps 100%
  • Oxides 78%
  • Oxidation 64%
  • oxides 57%
  • Gases 52%
  2 引文 斯高帕斯（Scopus）

• Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

  Liu, C. W., Lee, M. H., Chen, M. J., Lin, I. C. & Lin, C. F., 2000 3月 20, 於: Applied Physics Letters. 76, 12, p. 1516-1518 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • electroluminescence 100%
  • metal oxides 95%
  • diodes 74%
  • room temperature 55%
  • silicon 53%
  93 引文 斯高帕斯（Scopus）

• Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

  Liu, C. W., Lee, M. H., Chang, S. T., Chen, M. J. & Lin, C. F., 2000 10月 15, 於: Japanese Journal of Applied Physics. 39, 10 B, p. L1016-L1018

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Electroluminescence 100%
  • Silicon oxides 91%
  • electroluminescence 64%
  • metal oxides 61%
  • Diodes 58%
  2 引文 斯高帕斯（Scopus）

• Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes

  Liu, C. W., Lee, M. H., Chen, M. J., Lin, C. F. & Chern, M. Y., 2000 12月, 於: IEEE Electron Device Letters. 21, 12, p. 601-603 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Interface Roughness 100%
  • Electroluminescence 90%
  • Silicon oxides 83%
  • Tunneling 58%
  • Diodes 52%
  39 引文 斯高帕斯（Scopus）

• Roughness-enhanced reliability of MOS tunneling diodes

  Lin, C. H., Yuan, F., Shie, C. R., Chen, K. F., Hsu, B. C., Lee, M. H., Pai, W. W. & Liu, C. W., 2002 7月, 於: IEEE Electron Device Letters. 23, 7, p. 431-433 3 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Tunneling 100%
  • Diodes 90%
  • Surface roughness 81%
  • Momentum 64%
  • Oxide 53%
  6 引文 斯高帕斯（Scopus）