• 1868 引文
  • 25 h-指數
19982020

每年研究成果

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研究成果

2020

Correlation between ferroelectricity and nitrogen incorporation of undoped hafnium dioxide thin films

Luo, J. D., Yeh, Y. T., Lai, Y. Y., Wu, C. F., Chung, H. T., Li, Y. S., Chuang, K. C., Li, W. S., Chen, P. G., Lee, M. H. & Cheng, H. C., 2020 六月, 於 : Vacuum. 176, 109317.

研究成果: 雜誌貢獻文章

Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

Chen, K. T., Lo, C., Lin, Y. Y., Chueh, C. Y., Chang, C., Siang, G. Y., Tseng, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. H., Liang, H., Chiang, S. H., Liu, J. H., Lin, Y. Y., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Liao, M. H., Chang, S. T. 及其他2, Tseng, Y. Y. & Lee, M. H., 2020 四月, 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9129088. (IEEE International Reliability Physics Symposium Proceedings; 卷 2020-April).

研究成果: 書貢獻/報告類型會議貢獻

The Demonstration of 3-D Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 Thermoelectric Devices by Ionized Sputter System

Liao, M. H., Huang, K. C., Su, W. J., Chen, S. C. & Lee, M. H., 2020 一月, 於 : IEEE Transactions on Electron Devices. 67, 1, p. 406-408 3 p., 8906168.

研究成果: 雜誌貢獻文章

The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance

Liao, M. H., Lu, P. Y., Su, W. J., Chen, S. C., Hung, H. T., Kao, C. R., Pu, W. C., Chen, C. C. A. & Lee, M. H., 2020 五月, 於 : IEEE Transactions on Electron Devices. 67, 5, p. 2205-2207 3 p., 9042868.

研究成果: 雜誌貢獻文章

2019

3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Lin, Y. D., Tang, Y. T., Sheu, S. S., Hou, T. H., Lo, W. C., Lee, M. H., Chang, M. F., King, Y. C., Lin, C. J., Lee, H. Y., Yeh, P. C., Yang, H. Y., Yeh, P. S., Wang, C. Y., Su, J. W. & Li, S. H., 2019 十二月, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993504. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 十二月, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December).

研究成果: 書貢獻/報告類型會議貢獻

Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs

Chen, K. T., Chou, Y. C., Siang, G. Y., Chen, H. Y., Lo, C., Liao, C. Y., Chang, S. T. & Lee, M. H., 2019 七月 1, 於 : Applied Physics Express. 12, 7, 071003.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

Lee, M. H., Chen, K. T., Liao, C. Y., Gu, S. S., Siang, G. Y., Chou, Y. C., Chen, H. Y., Le, J., Hong, R. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Tang, M., Lin, Y. D., Lee, H. Y., Li, K. S. & Liu, C. W., 2019 一月 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 31.8.1-31.8.4 8614510. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

研究成果: 書貢獻/報告類型會議貢獻

6 引文 斯高帕斯(Scopus)

Ferroelectric HfZrO2 FETs for steep switch onset

Chen, K. T., Liao, C. Y., Chen, H. Y., Lo, C., Siang, G. Y., Lin, Y. Y., Tseng, Y. J., Chang, C., Chueh, C. Y., Yang, Y. J., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2019 七月 15, 於 : Microelectronic Engineering. 215, 110991.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

Luo, J. D., Zhang, H. X., Wang, Z. Y., Gu, S. S., Yeh, Y. T., Chung, H. T., Chuang, K. C., Liao, C. Y., Li, W. S., Li, Y. S., Li, K. S., Lee, M. H. & Cheng, H. C., 2019 一月 1, 於 : Japanese Journal of Applied Physics. 58, SD, SDDE07.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode

Chen, K. T., Liao, C. Y., Lo, C., Chen, H. Y., Siang, G. Y., Liu, S., Chang, S. C., Liao, M. H., Chang, S. T. & Lee, M. H., 2019 三月, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 62-64 3 p. 8731272. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

研究成果: 書貢獻/報告類型會議貢獻

3 引文 斯高帕斯(Scopus)

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Li, K. S., Wei, Y. J., Chen, Y. J., Chiu, W. C., Chen, H. C., Lee, M. H., Chiu, Y. F., Hsueh, F. K., Wu, B. W., Chen, P. G., Lai, T. Y., Chen, C. C., Shieh, J. M., Yeh, W. K., Salahuddin, S. & Hu, C., 2019 一月 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 31.7.1-31.7.4 8614521. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

研究成果: 書貢獻/報告類型會議貢獻

4 引文 斯高帕斯(Scopus)

Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications

Chen, K. T., Chen, H. Y., Liao, C. Y., Siang, G. Y., Lo, C., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2019 三月, 於 : IEEE Electron Device Letters. 40, 3, p. 399-402 4 p., 8630859.

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators

Liao, M. H., Wu, C. C., Su, W. J., Chen, S. C. & Lee, M. H., 2019 十月, 於 : IEEE Transactions on Electron Devices. 66, 10, p. 4478-4480 3 p., 8818614.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)
2018

Ferroelectric Al:HfO2 negative capacitance FETs

Lee, M. H., Chen, P. G., Fan, S. T., Chou, Y. C., Kuo, C. Y., Tang, C. H., Chen, H. H., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Chen, K. T., Chang, S. T., Liao, M. H., Li, K. S. & Liu, C. W., 2018 一月 23, 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., p. 23.3.1-23.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: 書貢獻/報告類型會議貢獻

10 引文 斯高帕斯(Scopus)

Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

Lee, M. H., Kuo, C. Y., Tang, C. H., Chen, H. H., Liao, C. Y., Hong, R. C., Gu, S. S., Chou, Y. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Liao, M. H. & Li, K. S., 2018 七月 26, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 271-273 3 p. 8421475. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

研究成果: 書貢獻/報告類型會議貢獻

Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Chen, K. T., Gu, S. S., Wang, Z. Y., Liao, C. Y., Chou, Y. C., Hong, R. C., Chen, S. Y., Chen, H. Y., Siang, G. Y., Le, J., Chen, P. G., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2018 八月 3, (接受/付印) 於 : IEEE Journal of the Electron Devices Society.

研究成果: 雜誌貢獻文章

開啟存取
5 引文 斯高帕斯(Scopus)

Steep switching of In0.18 Al0.82 N/AlN/GaN MIS-HEMT (metal insulator semiconductor high electron mobility transistors) on si for sensor applications

Chen, P. G., Chen, K. T., Tang, M., Wang, Z. Y., Chou, Y. C. & Lee, M. H., 2018 九月, 於 : Sensors (Switzerland). 18, 9, 2795.

研究成果: 雜誌貢獻文章

開啟存取

Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMT

Chen, P. G., Chou, Y. C., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Tang, M., Liao, M. H. & Lee, M. H., 2018 六月 22, Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

研究成果: 書貢獻/報告類型會議貢獻

The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors

Lien, C., Hsieh, C. F., Wu, H. S., Wu, T. C., Wei, S. J., Chu, Y. H., Liao, M. H. & Lee, M. H., 2018 十一月, 於 : IEEE Transactions on Electron Devices. 65, 11, p. 4834-4838 5 p., 8466023.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

The Design of High Performance Si/SiGe-Based Tunneling FET: Strategies and Solutions

Chung, S. S., Hsieh, E. R., Zhao, Y. B., Lee, J. W. & Lee, M. H., 2018 十月 9, 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc., 8487104. (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018).

研究成果: 書貢獻/報告類型會議貢獻

Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices

Liao, M. H., Huang, K. C., Tsai, F. A., Liu, C. Y., Lien, C. & Lee, M. H., 2018 一月 1, 於 : AIP Advances. 8, 1, 015020.

研究成果: 雜誌貢獻文章

7 引文 斯高帕斯(Scopus)
2017

Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)

Lee, M. H., Liao, M. H., Tai, C. W. & Chang, S. T., 2017 一月 17, FTC 2016 - Proceedings of Future Technologies Conference. Institute of Electrical and Electronics Engineers Inc., p. 13298-13301 4 p. 7821775. (FTC 2016 - Proceedings of Future Technologies Conference).

研究成果: 書貢獻/報告類型會議貢獻

Hidden Antipolar Order Parameter and Entangled Néel-Type Charged Domain Walls in Hybrid Improper Ferroelectrics

Lee, M. H., Chang, C. P., Huang, F. T., Guo, G. Y., Gao, B., Chen, C. H., Cheong, S. W. & Chu, M. W., 2017 十月 10, 於 : Physical Review Letters. 119, 15, 157601.

研究成果: 雜誌貢獻文章

開啟存取
17 引文 斯高帕斯(Scopus)

In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact

Chen, P. G., Tang, M., Liao, M. H. & Lee, M. H., 2017 三月 1, 於 : Solid-State Electronics. 129, p. 206-209 4 p.

研究成果: 雜誌貢獻字母

4 引文 斯高帕斯(Scopus)

Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

Lee, M-H., Chen, P. G., Fan, S. T., Kuo, C. Y., Chen, H. H., Gu, S. S., Chou, Y. C., Tang, C. H., Hong, R. C., Wang, Z. Y., Liao, M. H., Li, K. S., Chen, M. C. & Liu, C. W., 2017 六月 7, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 7942466. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

Lee, M. H., Fan, S. T., Tang, C. H., Chen, P. G., Chou, Y. C., Chen, H. H., Kuo, J. Y., Xie, M. J., Liu, S. N., Liao, M. H., Jong, C. A., Li, K. S., Chen, M. C. & Liu, C. W., 2017 一月 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 12.1.1-12.1.4 7838400. (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: 書貢獻/報告類型會議貢獻

49 引文 斯高帕斯(Scopus)

Plasmonically induced coherent and polarized random laser emissions in colloidal CdSe/ZnS quantum dots with ellipsoidal Ag Nanoparticles

Yao, Y. C., Yang, Z. P., Haung, J. Y., Lee, M. H. & Lee, Y. J., 2017 十月 25, 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings; 卷 2017-January).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect

Liao, M. H., Huang, H. Y., Tsai, F. A., Chuang, C. C., Hsu, M. H., Lee, C. C., Lee, M. H., Lien, C., Hsieh, C. F., Wu, T. C., Wu, H. S. & Yao, C. W., 2017 六月 1, 於 : Vacuum. 140, p. 63-65 3 p.

研究成果: 雜誌貢獻文章

The guideline on designing face-tunneling FET for large-scale-device applications in IoT

Hsieh, E. R., Lee, J. W., Lee, M. H. & Chung, S. S., 2017 十二月 29, 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., p. 3-4 2 p. 8242268. (2017 Silicon Nanoelectronics Workshop, SNW 2017; 卷 2017-January).

研究成果: 書貢獻/報告類型會議貢獻

2016

A pilot study of students' perceptions of collaborative knowledge building in 21st century learning with their knowledge building behaviors

Tsai, P. S., Chen, Y. Y., Liang, J. C., Chai, C. S., Lee, M. H. & Tsai, C. C., 2016 十一月 28, Proceedings - IEEE 16th International Conference on Advanced Learning Technologies, ICALT 2016. Spector, J. M., Tsai, C-C., Huang, R., Resta, P., Sampson, D. G., Kinshuk & Chen, N-S. (編輯). Institute of Electrical and Electronics Engineers Inc., p. 354-356 3 p. 7756995. (Proceedings - IEEE 16th International Conference on Advanced Learning Technologies, ICALT 2016).

研究成果: 書貢獻/報告類型會議貢獻

Divergent dielectric characteristics in cascaded high-K gate stacks with reverse gradient bandgap structures

Tsai, M. C., Cheng, P. H., Lee, M-H., Lin, H. C. & Chen, M. J., 2016 五月 26, 於 : Journal of Physics D: Applied Physics. 49, 26, 265108.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers

Hsu, S. M., Li, Y. S., Tu, M. S., He, J. C., Chiu, I. C., Chen, P. G., Lee, M. H., Chen, J. Z. & Cheng, I. C., 2016 八月 15, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., p. 153-156 4 p. 7543648. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

研究成果: 書貢獻/報告類型會議貢獻

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Tsai, M. C., Lee, M. H., Kuo, C. L., Lin, H. C. & Chen, M. J., 2016 十一月 30, 於 : Applied Surface Science. 387, p. 274-279 6 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Metal insulator semiconductor field effect transistors with thin strained Ge film

Chen, K. T., He, R. Y., Chen, C. W., Tu, W. H., Kao, C. Y., Chang, S. T. & Lee, M. H., 2016 十二月 1, 於 : Thin Solid Films. 620, p. 197-200 4 p.

研究成果: 雜誌貢獻文章

Morphology control and characteristics of ZnO/ZnS nanorod arrays synthesised by microwave-assisted heating

Tsai, M. K., Huang, W., Hu, S. Y., Lee, J. W., Lee, Y. C., Lee, M-H. & Shen, J. L., 2016 四月 1, 於 : Micro and Nano Letters. 11, 4, p. 192-195 4 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance

Chiu, Y. C., Chang, C. Y., Yen, S. S., Fan, C. C., Hsu, H. H., Cheng, C. H., Chen, P. C., Chen, P. W., Liou, G. L., Lee, M. H., Liu, C. & Chou, W. C., 2016 九月 22, 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., p. MY71-MY75 7574623. (IEEE International Reliability Physics Symposium Proceedings; 卷 2016-September).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

Reliable doping technique for WSe2 by W:Ta co-sputtering process

Chien, P. Y., Zhang, M., Huang, S. C., Lee, M. H., Hsu, H. R., Ho, Y. T., Chu, Y. C., Jong, C. A. & Woo, J., 2016 九月 27, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., p. 58-59 2 p. 7577984. (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

研究成果: 書貢獻/報告類型會議貢獻

3 引文 斯高帕斯(Scopus)

Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack

Liu, C., Chen, P. G., Xie, M. J., Liu, S. N., Lee, J. W., Huang, S. J., Liu, S., Chen, Y. S., Lee, H. Y., Liao, M. H., Chen, P. S. & Lee, M. H., 2016 四月, 於 : Japanese Journal of Applied Physics. 55, 4, 04EB08.

研究成果: 雜誌貢獻文章

13 引文 斯高帕斯(Scopus)
2015

Characteristics of controllable-shape well-aligned zinc oxide nanorods synthesized by microwave-assisted heating

Tsai, M. K., Huang, W., Hu, S. Y., Lee, Y. C., Lee, J. W., Lee, M-H. & Shen, J. L., 2015 十一月 1, 於 : Micro and Nano Letters. 10, 11, p. 630-632 3 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Double nitridation of crystalline ZrO 2 /Al 2 O 3 buffer gate stack with high capacitance, low leakage and improved thermal stability

Huang, J. J., Tsai, Y. J., Tsai, M. C., Lee, M. H. & Chen, M. J., 2015 三月 1, 於 : Applied Surface Science. 330, p. 221-227 7 p.

研究成果: 雜誌貢獻文章

6 引文 斯高帕斯(Scopus)

Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

Lee, M. H., Wei, Y. T., Liu, C., Huang, J. J., Tang, M., Chueh, Y. L., Chu, K. Y., Chen, M. J., Lee, H. Y., Chen, Y. S., Lee, L. H. & Tsai, M. J., 2015 七月 1, 於 : IEEE Journal of the Electron Devices Society. 3, 4, p. 377-381 5 p., 7110513.

研究成果: 雜誌貢獻文章

40 引文 斯高帕斯(Scopus)

Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms

Chiu, Y. C., Chang, C. Y., Hsu, H. H., Cheng, C-H. & Lee, M-H., 2015 一月 1, 2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc., 卷 2015-May. p. MY31-MY35 7112817

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Huang, J. J., Tsai, Y. J., Tsai, M. C., Huang, L. T., Lee, M. H. & Chen, M. J., 2015 一月 1, 於 : Applied Surface Science. 324, p. 662-668 7 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Indium-based ternary barrier high-electron-mobility transistors on Si substrate with high ON/OFF ratio for power applications

Chen, P. G., Tang, M. & Lee, M-H., 2015 三月 1, 於 : IEEE Electron Device Letters. 36, 3, p. 259-261 3 p., 7005421.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Chiu, Y. C., Cheng, C-H., Fan, C. C., Chen, P. C., Chang, C. Y., Lee, M-H., Liu, C., Yen, S. S. & Hsu, H. H., 2015 八月 3, 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., p. 41-42 2 p. 7175543. (Device Research Conference - Conference Digest, DRC; 卷 2015-August).

研究成果: 書貢獻/報告類型會議貢獻

Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance

Chiu, Y. C., Cheng, C. H., Chang, C. Y., Lee, M-H., Hsu, H. H. & Yen, S. S., 2015 八月 25, 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T184-T185 7223671. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2015-August).

研究成果: 書貢獻/報告類型會議貢獻

30 引文 斯高帕斯(Scopus)

Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off <0.2V, and hysteresis-free strategies

Lee, M. H., Chen, P. G., Liu, C., Chu, K. Y., Cheng, C. C., Xie, M. J., Liu, S. N., Lee, J. W., Huang, S. J., Liao, M. H., Tang, M., Li, K. S. & Chen, M. C., 2015 二月 16, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., p. 22.5.1-22.5.4 7409759. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2016-February).

研究成果: 書貢獻/報告類型會議貢獻

53 引文 斯高帕斯(Scopus)

Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

Lee, M. H., Wei, Y. T., Chu, K. Y., Huang, J. J., Chen, C. W., Cheng, C. C., Chen, M. J., Lee, H. Y., Chen, Y. S., Lee, L. H. & Tsai, M. J., 2015 四月 1, 於 : IEEE Electron Device Letters. 36, 4, p. 294-296 3 p., 7038127.

研究成果: 雜誌貢獻文章

92 引文 斯高帕斯(Scopus)