跳至主導覽
跳至搜尋
跳過主要內容
國立臺灣師範大學 首頁
專家資料申請/更新
English
中文
首頁
個人檔案
研究單位
研究成果
研究計畫
新聞/媒體
資料集
學術活動
得獎記錄
學生論文
按專業知識、姓名或所屬機構搜尋
查看斯高帕斯 (Scopus) 概要
李 敏鴻
教授
光電工程學士學位學程
電話
(02)7749-6747
電子郵件
mhlee
ntnu.edu
tw
h-index
h10-index
h5-index
3117
引文
31
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
1705
引文
20
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
533
引文
12
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
1998
2023
每年研究成果
概覽
指紋
網路
研究計畫
(5)
研究成果
(221)
類似的個人檔案
(6)
指紋
查看啟用 Min-Hung Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
INIS
ferroelectric materials
100%
layers
86%
metals
71%
substrates
69%
devices
61%
applications
59%
voltage
55%
field effect transistors
51%
silicon
49%
oxides
49%
capacitance
47%
transistors
43%
strains
43%
reliability
43%
silicon oxides
37%
stacks
35%
dielectrics
33%
thin films
32%
tunneling
30%
interfaces
30%
power
29%
polarization
29%
semiconductor materials
28%
performance
26%
thickness
26%
operation
25%
germanium silicides
25%
tunnel diodes
24%
density
24%
comparative evaluations
23%
carbon
21%
bending
21%
modeling
20%
electroluminescence
20%
growth
19%
junctions
18%
gallium nitrides
18%
zirconium oxides
17%
mobility
16%
deposition
16%
annealing
15%
design
15%
emission
15%
hysteresis
14%
distribution
14%
capacitors
14%
retention
14%
surfaces
14%
speed
14%
stability
14%
Material Science
Ferroelectric Material
97%
Field Effect Transistor
78%
Devices
56%
Capacitance
49%
Temperature
45%
Density
42%
Silicon
38%
Oxide
37%
Durability
37%
Strain
36%
Dielectric Material
33%
Metal Oxide
33%
Diode
32%
Metal
27%
Transistor
25%
Metal-Oxide-Semiconductor Field-Effect Transistor
25%
Bending
23%
Electroluminescence
22%
Electrical Property
19%
Flexible Substrate
18%
Surface
17%
Material
17%
Thin-Film Transistor
17%
Capacitor
16%
Electronic Circuit
15%
Carbon Nanotube
15%
Electron Mobility
15%
Alloy
14%
Oxide Semiconductor
14%
Switch
14%
Thin Films
13%
Film
12%
Ferroelectricity
11%
Nanocrystalline Silicon
10%
Heterojunction
10%
Polyimide
10%
Light-Emitting Diode
10%
Laser
10%
Characterization
10%
Electronics
9%
Hafnium
9%
Electrode
9%
Solidification
8%
Chemical Vapor Deposition
8%
Hole Mobility
8%
Crystalline Material
8%
Buffer Layer
7%
Indium
7%
Aluminum Nitride
7%
Amorphous Silicon
7%
Physics
Ferroelectricity
49%
Field Effect Transistor
41%
Substrates
25%
Capacitance
23%
Electric Potential
19%
Memory
18%
Model
17%
Temperature
16%
Metal
15%
Dielectrics
15%
Silicon
14%
Oxide
13%
Metal Oxide Semiconductor
12%
Technology
12%
Ratios
11%
Tunnel
10%
Simulation
10%
Cycles
10%
Diode
9%
Alloy
9%
Stacking
8%
Domains
8%
Performance
8%
Light Emitting Diode
8%
Growth
7%
Speed
7%
Silicon Oxide
6%
Flexible Electronics
6%
Region
6%
Wafer
6%
Quantum Dot
6%
Solidification
6%
Emission
6%
Thin Films
6%
Ultrahigh Vacuum
5%
Gaps
5%
Semiconductor
5%
Value
5%
Laser
5%
Arrays
5%
Capacitor
5%