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查看斯高帕斯 (Scopus) 概要
李 敏鴻
教授
光電工程學士學位學程
電話
(02)7749-6747
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mhlee
ntnu.edu
tw
h-index
h10-index
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2740
引文
29
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1499
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
407
引文
11
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1998
2023
每年研究成果
概覽
指紋
網路
研究計畫
(5)
研究成果
(213)
類似的個人檔案
(6)
如果您對這些純文本內容做了任何改變，很快就會看到。
指紋
查看啟用 Min-Hung Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Ferroelectric materials
100%
Field effect transistors
65%
Substrates
44%
Capacitance
38%
Metals
27%
Gate dielectrics
27%
Oxides
27%
Data storage equipment
24%
Durability
23%
Polarization
20%
Silicon
20%
Thin film transistors
18%
Leakage currents
18%
Hole mobility
17%
Nanocrystalline silicon
17%
Electric potential
16%
Annealing
16%
Diodes
16%
Electroluminescence
15%
Carbon
15%
Threshold voltage
14%
Tunnel field effect transistors
14%
Ferroelectricity
13%
Temperature
13%
Drain current
13%
Flexible displays
13%
Oxide semiconductors
13%
Heterojunctions
13%
Transistors
12%
Flexible electronics
12%
High electron mobility transistors
12%
Plasmas
12%
Energy gap
12%
Hot Temperature
12%
Capacitors
11%
Permittivity
11%
Demonstrations
11%
Buffer layers
10%
Electron mobility
10%
Silicon oxides
10%
Three dimensional integrated circuits
10%
Polysilicon
10%
Polyimides
10%
Surface roughness
10%
Hafnium
10%
FinFET
9%
Doping (additives)
9%
Hysteresis
9%
Nitridation
9%
Thin films
9%
Chemical Compounds
Voltage
29%
Field Effect
28%
Tunneling
26%
Dielectric Material
26%
Antiferroelectricity
22%
Strain
19%
Polarization
18%
Oxide
18%
Leakage Current
18%
Capacitor
16%
Application
15%
Hysteresis
12%
Compound Mobility
11%
Annealing
11%
Electron Mobility
10%
Threading Dislocation
10%
Semiconductor
9%
Drain Current
9%
Multilayer
9%
Carbon Nanotube
9%
Metal
8%
Hole Mobility
8%
Electroluminescence
8%
Buffer Solution
8%
Metal Oxide
8%
Band Gap
7%
Nonconductor
7%
Alloy
7%
Epitaxial Growth
7%
Simulation
7%
Dielectric Constant
6%
Flicker Noise
6%
Laser Annealing
6%
Electrical Property
6%
Liquid Film
6%
Tetragonal Space Group
6%
Surface
6%
Carbon Atom
6%
Solidification
6%
Chemical Vapour Deposition
5%
Wavelength
5%
Plasma
5%
Charge Density Wave
5%
Hafnium Atom
5%
Resistance
5%
Physics & Astronomy
field effect transistors
42%
capacitance
27%
metal oxide semiconductors
19%
electroluminescence
17%
silicon
17%
metal oxides
16%
endurance
13%
diodes
12%
transistors
12%
electric potential
12%
oxides
11%
augmentation
9%
cycles
9%
carbon
9%
thin films
9%
hafnium oxides
9%
switches
9%
MIS (semiconductors)
8%
leakage
8%
hole mobility
7%
tunnels
7%
light emitting diodes
7%
performance
6%
annealing
6%
hysteresis
6%
traps
6%
ferroelectricity
6%
buffers
6%
permittivity
5%
vapor deposition
5%
threshold voltage
5%
high electron mobility transistors
5%
polarization
5%
current density
5%
nitrogen
5%
amorphous silicon
5%
room temperature
5%
ultrahigh vacuum
5%
fins
5%
capacitors
5%
