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查看斯高帕斯 (Scopus) 概要
李 敏鴻
教授
光電工程學士學位學程
電話
(02)7749-6747
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mhlee
ntnu.edu
tw
h-index
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2432
引文
27
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1246
引文
17
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
392
引文
11
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1998
2022
每年研究成果
概覽
指紋
網路
研究計畫
(4)
研究成果
(197)
類似的個人檔案
(6)
如果您對這些純文本內容做了任何改變，很快就會看到。
指紋
查看啟用 Min-Hung Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Ferroelectric materials
100%
Field effect transistors
72%
Substrates
51%
Capacitance
43%
Gate dielectrics
31%
Oxides
31%
Metals
31%
Data storage equipment
25%
Polarization
22%
Thin film transistors
21%
Leakage currents
20%
Durability
20%
Hole mobility
19%
Nanocrystalline silicon
19%
Annealing
19%
Diodes
19%
Silicon
18%
Electroluminescence
18%
Electric potential
17%
Threshold voltage
16%
Tunnel field effect transistors
16%
Ferroelectricity
15%
Drain current
15%
Flexible displays
15%
Oxide semiconductors
15%
Heterojunctions
15%
Transistors
14%
Flexible electronics
14%
Temperature
14%
Plasmas
14%
Energy gap
14%
Hot Temperature
13%
Permittivity
13%
Carbon
12%
Buffer layers
12%
Electron mobility
12%
Silicon oxides
12%
High electron mobility transistors
12%
Polysilicon
12%
Polyimides
12%
Surface roughness
11%
Hafnium
11%
FinFET
11%
Three dimensional integrated circuits
11%
Demonstrations
11%
Doping (additives)
11%
Nitridation
11%
Thin films
11%
Capacitors
10%
MOSFET devices
10%
Chemical Compounds
Field Effect
32%
Voltage
32%
Dielectric Material
28%
Tunneling
28%
Strain
22%
Oxide
21%
Leakage Current
20%
Polarization
20%
Capacitor
16%
Application
15%
Compound Mobility
13%
Annealing
12%
Electron Mobility
12%
Threading Dislocation
12%
Hysteresis
12%
Antiferroelectricity
12%
Semiconductor
11%
Drain Current
10%
Metal
10%
Hole Mobility
10%
Electroluminescence
9%
Buffer Solution
9%
Metal Oxide
9%
Band Gap
8%
Nonconductor
8%
Alloy
8%
Epitaxial Growth
8%
Simulation
8%
Dielectric Constant
8%
Flicker Noise
7%
Laser Annealing
7%
Liquid Film
7%
Tetragonal Space Group
7%
Surface
7%
Solidification
6%
Carbon Atom
6%
Wavelength
6%
Plasma
6%
Electrical Property
6%
Charge Density Wave
6%
Chemical Vapour Deposition
6%
Hafnium Atom
6%
Chemical Passivation
5%
Atomic Layer Epitaxy
5%
Quantum Dot
5%
Interface Roughness
5%
Nitrogen
5%
Multilayer
5%
Resistance
5%
Polyimide Macromolecule
5%
Physics & Astronomy
field effect transistors
46%
capacitance
31%
metal oxide semiconductors
23%
electroluminescence
20%
silicon
19%
metal oxides
18%
diodes
14%
transistors
14%
oxides
12%
electric potential
12%
augmentation
11%
endurance
11%
thin films
10%
hafnium oxides
10%
switches
10%
carbon
9%
MIS (semiconductors)
9%
leakage
9%
hole mobility
9%
cycles
8%
tunnels
8%
light emitting diodes
8%
annealing
7%
hysteresis
7%
traps
7%
ferroelectricity
7%
performance
7%
buffers
7%
permittivity
6%
high electron mobility transistors
6%
vapor deposition
6%
current density
6%
nitrogen
6%
amorphous silicon
6%
polarization
6%
room temperature
6%
ultrahigh vacuum
5%
fins
5%
threshold voltage
5%
capacitors
5%
light emission
5%
laser annealing
5%
slopes
5%
CMOS
5%
