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與 UN SDG 相關的專業知識
聯合國會員國於 2015 年同意 17 項全球永續發展目標 (SDG)，以終結貧困、保護地球並確保全體的興盛繁榮。此人的作品有助於以下永續發展目標：
指紋
查看啟用 Min-Hung Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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過去五年中的合作和熱門研究領域
國家/地區層面的近期外部共同作業。按一下圓點深入探索詳細資料，或
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3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs
Lee, J. Y., Chang, F. S., Hsiang, K. Y., Chen, P. H., Luo, Z. F., Li, Z. X., Tsai, J. H., Liu, C. W. & Lee, M. H., 2023, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2023-June).研究成果: 書貢獻/報告類型 › 會議論文篇章
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Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf_1-xZr_XO_2 for Quantum Computing Applications
Hsiang, K. Y., Lee, J. Y., Lou, Z. F., Chang, F. S., Li, Z. X., Liu, C. W., Hou, T. H., Su, P. & Lee, M. H., 2023, 2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (IEEE International Reliability Physics Symposium Proceedings; 卷 2023-March).研究成果: 書貢獻/報告類型 › 會議論文篇章
1 引文 斯高帕斯（Scopus） -
Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM
Hsiang, K. Y., Lee, J. Y., Lou, Z. F., Chang, F. S., Chen, Y. C., Li, Z. X., Liao, M. H., Liu, C. W., Hou, T. H., Su, P. & Lee, M. H., 2023 4月 1, 於: IEEE Transactions on Electron Devices. 70, 4, p. 2142-2146 5 p.研究成果: 雜誌貢獻 › 期刊論文 › 同行評審
開啟存取4 引文 斯高帕斯（Scopus） -
FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations
Hsiang, K. Y., Lee, J. Y., Chang, F. S., Lou, Z. F., Li, Z. X., Li, Z. H., Chen, J. H., Liu, C. W., Hou, T. H. & Lee, M. H., 2023, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2023-June).研究成果: 書貢獻/報告類型 › 會議論文篇章
4 引文 斯高帕斯（Scopus） -
First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles
Chen, Y. R., Liu, Y. C., Zhao, Z., Hsieh, W. H., Lee, J. Y., Tu, C. T., Huang, B. W., Wang, J. F., Chueh, S. J., Xing, Y., Chen, G. H., Chou, H. C., Woo, D. S., Lee, M. H. & Liu, C. W., 2023, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2023-June).研究成果: 書貢獻/報告類型 › 會議論文篇章
4 引文 斯高帕斯（Scopus）