• 1819 引文
  • 25 h-指數
19982020

每年研究成果

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研究成果

The Demonstration of 3-D Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 Thermoelectric Devices by Ionized Sputter System

Liao, M. H., Huang, K. C., Su, W. J., Chen, S. C. & Lee, M. H., 2020 一月, 於 : IEEE Transactions on Electron Devices. 67, 1, p. 406-408 3 p., 8906168.

研究成果: 雜誌貢獻文章

  • Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

    Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 十二月, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December).

    研究成果: 書貢獻/報告類型會議貢獻

  • Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs

    Chen, K. T., Chou, Y. C., Siang, G. Y., Chen, H. Y., Lo, C., Liao, C. Y., Chang, S. T. & Lee, M. H., 2019 七月 1, 於 : Applied Physics Express. 12, 7, 071003.

    研究成果: 雜誌貢獻文章

  • Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

    Lee, M. H., Chen, K. T., Liao, C. Y., Gu, S. S., Siang, G. Y., Chou, Y. C., Chen, H. Y., Le, J., Hong, R. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Tang, M., Lin, Y. D., Lee, H. Y., Li, K. S. & Liu, C. W., 2019 一月 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 31.8.1-31.8.4 8614510. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

    研究成果: 書貢獻/報告類型會議貢獻

  • 6 引文 斯高帕斯(Scopus)

    Ferroelectric HfZrO2 FETs for steep switch onset

    Chen, K. T., Liao, C. Y., Chen, H. Y., Lo, C., Siang, G. Y., Lin, Y. Y., Tseng, Y. J., Chang, C., Chueh, C. Y., Yang, Y. J., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2019 七月 15, 於 : Microelectronic Engineering. 215, 110991.

    研究成果: 雜誌貢獻文章