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與 UN SDG 相關的專業知識
聯合國會員國於 2015 年同意 17 項全球永續發展目標 (SDG)，以終結貧困、保護地球並確保全體的興盛繁榮。此人的作品有助於以下永續發展目標：
指紋
查看啟用 Min-Hung Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory
Lou, Z. F., Liao, C. Y., Hsiang, K. Y., Lin, C. Y., Lin, Y. D., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Hou, T. H., Tang, Y. T. & Lee, M. H., 2022, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).研究成果: 書貢獻/報告類型 › 會議論文篇章
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Correlation between Access Polarization and High Endurance (~ 1012cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2
Hsiang, K. Y., Liao, C. Y., Lin, Y. Y., Lou, Z. F., Lin, C. Y., Lee, J. Y., Chang, F. S., Li, Z. X., Tseng, H. C., Wang, C. C., Ray, W. C., Hou, T. H., Chen, T. C., Chang, C. S. & Lee, M. H., 2022, 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. P91-P94 (IEEE International Reliability Physics Symposium Proceedings; 卷 2022-March).研究成果: 書貢獻/報告類型 › 會議論文篇章
2 引文 斯高帕斯（Scopus） -
Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture
Hsiang, K. Y., Liao, C. Y., Liu, J. H., Lin, C. Y., Lee, J. Y., Lou, Z. F., Chang, F. S., Ray, W. C., Li, Z. X., Tseng, H. C., Wang, C. C., Liao, M. H., Hou, T. H. & Lee, M. H., 2022 11月 1, 於: IEEE Electron Device Letters. 43, 11, p. 1850-1853 4 p.研究成果: 雜誌貢獻 › 期刊論文 › 同行評審
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Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf1-xZrxO2FET
Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Lin, C. Y., Ray, W. C., Chang, F. S., Wang, C. C., Li, Z. X., Tseng, H. C., Lee, J. Y., Chen, P. H., Tsai, J. H., Chen, P. G. & Lee, M. H., 2022, 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. Institute of Electrical and Electronics Engineers Inc., (2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022).研究成果: 書貢獻/報告類型 › 會議論文篇章
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Endurance > 1011Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM
Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Tseng, H. C., Lin, C. Y., Li, Z. X., Hsieh, F. C., Wang, C. C., Chang, F. S., Ray, W. C., Tseng, Y. Y., Chang, S. T., Chen, T. C. & Lee, M. H., 2022, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., p. 393-394 2 p. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June).研究成果: 書貢獻/報告類型 › 會議論文篇章
2 引文 斯高帕斯（Scopus）