跳至主導覽
跳至搜尋
跳過主要內容
國立臺灣師範大學 首頁
專家資料申請/更新
English
中文
首頁
個人檔案
研究單位
研究成果
研究計畫
新聞/媒體
資料集
學術活動
得獎記錄
學生論文
按專業知識、姓名或所屬機構搜尋
查看斯高帕斯 (Scopus) 概要
鄭 淳護
教授
機電工程學系
https://orcid.org/0000-0002-7995-4725
電話
(02)7749-3514
電子郵件
chcheng
ntnu.edu
tw
h-index
h10-index
h5-index
2586
引文
27
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
825
引文
17
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
75
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2007
2024
每年研究成果
概覽
指紋
網路
研究計畫
(5)
研究成果
(184)
類似的個人檔案
(6)
指紋
查看啟用 Chun-Hu Cheng 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
INIS
aluminium oxides
14%
annealing
19%
applications
42%
capacitance
68%
capacitors
63%
defects
18%
density
28%
devices
72%
dielectrics
67%
distribution
19%
doped materials
22%
electrodes
41%
energy
25%
engineering
19%
ferroelectric materials
79%
field effect transistors
18%
films
24%
hafnium
29%
hafnium oxides
24%
interfaces
25%
investigations
26%
layers
64%
leakage
15%
leakage current
29%
memory devices
15%
metals
77%
mobility
31%
mosfet
17%
operation
18%
oxides
36%
oxygen
34%
performance
81%
plasma
39%
polarization
24%
power
45%
randomness
25%
reliability
18%
retention
23%
substrates
30%
tantalum nitrides
50%
thickness
21%
thin films
70%
tin oxides
22%
titanium oxides
40%
transistors
100%
trapping
16%
traps
24%
vacancies
16%
voltage
58%
work functions
15%
Material Science
Aluminum Oxide
17%
Amorphous Material
13%
Annealing
11%
Capacitance
70%
Capacitor
54%
Conductivity
9%
Covalent Bond
6%
Density
34%
Devices
81%
Dielectric Material
73%
Display Device
7%
Durability
27%
Electrical Property
24%
Electrochromics
7%
Electrode
28%
Electron Mobility
6%
Electronic Circuit
9%
Ferrite
10%
Ferroelectric Material
70%
Field Effect Transistor
32%
Film
11%
Flexible Substrate
10%
Gallium
10%
Hafnium
37%
Indium
14%
Magnetic Property
10%
Material
7%
Metal
59%
Metal Oxide
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
19%
Nitride Compound
10%
Oxide
47%
Oxide Semiconductor
13%
Oxygen Vacancy
14%
Resistive Random-Access Memory
21%
Silicon
10%
Strain
8%
Surface
6%
Switch
12%
Tantalum
6%
Temperature
60%
Thermoelectrics
8%
Thin Films
9%
Thin-Film Transistor
70%
Tin Oxide
24%
Titanium Dioxide
23%
Titanium Oxide
22%
Transistor
37%
Zinc Oxide
10%
Zirconia
12%
Physics
Aluminium
6%
Annealing
5%
Behavior
9%
Capacitance
39%
Capacitor
49%
Coefficients
8%
Current Distribution
7%
Cycles
8%
Dielectrics
42%
Electric Potential
24%
Electrodes
24%
Electrons
6%
Ferroelectricity
38%
Field Effect Transistor
12%
Hafnium
26%
High Electron Mobility Transistors
7%
High Temperature
14%
Hysteresis
6%
Insulators
36%
Ion
5%
Memory
47%
Metal
51%
Model
5%
Nitrogen
5%
Nitrogen Plasma
6%
Oxide
42%
Oxygen
7%
Oxygen Plasma
5%
Performance
41%
Phase Transformations
5%
Ratios
13%
Resistive Switching
7%
Simulation
10%
Stability
5%
Substrates
11%
Temperature
20%
Thin Films
22%
Threshold Voltage
8%
Tin
9%
Titanium Dioxide
11%
Transferring
5%
Transistor
23%
Variations
8%
Work Functions
12%
Zirconium
11%
