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查看斯高帕斯 (Scopus) 概要
鄭 淳護
教授
機電工程學系
https://orcid.org/0000-0002-7995-4725
電話
(02)7749-3514
電子郵件
chcheng
ntnu.edu
tw
h-index
h10-index
h5-index
2569
引文
27
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1286
引文
19
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
255
引文
8
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2007
2024
每年研究成果
概覽
指紋
網路
研究計畫
(5)
研究成果
(184)
類似的個人檔案
(6)
指紋
查看啟用 Chun-Hu Cheng 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
INIS
transistors
100%
performance
81%
ferroelectric materials
79%
metals
77%
devices
72%
thin films
70%
capacitance
68%
dielectrics
67%
layers
64%
capacitors
63%
voltage
58%
tantalum nitrides
50%
power
45%
applications
42%
electrodes
41%
titanium oxides
40%
plasma
39%
oxides
36%
oxygen
34%
mobility
31%
substrates
30%
leakage current
29%
hafnium
29%
density
28%
investigations
26%
interfaces
25%
energy
25%
randomness
25%
films
24%
polarization
24%
hafnium oxides
24%
traps
24%
retention
23%
doped materials
22%
tin oxides
22%
thickness
21%
distribution
19%
engineering
19%
annealing
19%
defects
18%
reliability
18%
field effect transistors
18%
operation
18%
mosfet
17%
vacancies
16%
trapping
16%
work functions
15%
leakage
15%
memory devices
15%
aluminium oxides
14%
Material Science
Devices
81%
Dielectric Material
73%
Capacitance
70%
Ferroelectric Material
70%
Thin-Film Transistor
70%
Temperature
60%
Metal
59%
Capacitor
54%
Oxide
47%
Hafnium
37%
Transistor
37%
Density
34%
Field Effect Transistor
32%
Electrode
28%
Durability
27%
Electrical Property
24%
Tin Oxide
24%
Titanium Dioxide
23%
Titanium Oxide
22%
Resistive Random-Access Memory
21%
Metal-Oxide-Semiconductor Field-Effect Transistor
19%
Aluminum Oxide
17%
Metal Oxide
17%
Oxygen Vacancy
14%
Indium
14%
Oxide Semiconductor
13%
Amorphous Material
13%
Switch
12%
Zirconia
12%
Film
11%
Annealing
11%
Nitride Compound
10%
Zinc Oxide
10%
Gallium
10%
Silicon
10%
Magnetic Property
10%
Flexible Substrate
10%
Ferrite
10%
Electronic Circuit
9%
Thin Films
9%
Conductivity
9%
Strain
8%
Thermoelectrics
8%
Material
7%
Display Device
7%
Electrochromics
7%
Surface
6%
Covalent Bond
6%
Electron Mobility
6%
Tantalum
6%
Physics
Metal
51%
Capacitor
49%
Memory
47%
Oxide
42%
Dielectrics
42%
Performance
41%
Capacitance
39%
Ferroelectricity
38%
Insulators
36%
Hafnium
26%
Electrodes
24%
Electric Potential
24%
Transistor
23%
Thin Films
22%
Temperature
20%
High Temperature
14%
Ratios
13%
Work Functions
12%
Field Effect Transistor
12%
Zirconium
11%
Titanium Dioxide
11%
Substrates
11%
Simulation
10%
Tin
9%
Behavior
9%
Variations
8%
Cycles
8%
Threshold Voltage
8%
Coefficients
8%
High Electron Mobility Transistors
7%
Oxygen
7%
Resistive Switching
7%
Current Distribution
7%
Aluminium
6%
Nitrogen Plasma
6%
Electrons
6%
Hysteresis
6%
Oxygen Plasma
5%
Annealing
5%
Stability
5%
Nitrogen
5%
Model
5%
Transferring
5%
Phase Transformations
5%
Ion
5%
