• 633 引文
  • 14 h-指數
19972019

每年研究成果

如果您對這些純文本內容做了任何改變,很快就會看到。

研究成果

篩選
文章
2019

Integration of ARCS motivational model and it to enhance students learning in the context of atayal culture

Chao, J., Jiang, T. W., Yeh, Y. H., Liu, C. H. & Lin, C. M., 2019 一月 1, 於 : Eurasia Journal of Mathematics, Science and Technology Education. 15, 11, em1771.

研究成果: 雜誌貢獻文章

2018
開啟存取

Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays

Lee, C. C., Liu, C. H., Li, D. Y. & Hsieh, C. P., 2018 四月 1, 於 : Microelectronics Reliability. 83, p. 230-234 5 p.

研究成果: 雜誌貢獻文章

2017

A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash with Excellent Immunity to Sneak Path

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Chen, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2017 十二月 1, 於 : IEEE Transactions on Electron Devices. 64, 12, p. 4910-4918 9 p., 8089812.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)
開啟存取
3 引文 斯高帕斯(Scopus)
1 引文 斯高帕斯(Scopus)
2016
開啟存取
3 引文 斯高帕斯(Scopus)
2015
3 引文 斯高帕斯(Scopus)

Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment

Wang, S. J., Wang, M. C., Chen, S. Y., Lan, W. H., Yang, B. W., Huang, L. S. & Liu, C. H., 2015 一月 1, 於 : Microelectronics Reliability. 55, 11, p. 2203-2207 5 p.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures

Wang, S. J., Wang, M. C., Lee, W. D., Chen, W. S., Huang, H. S., Chen, S. Y., Huang Ms, L. S. & Liu, C. H., 2015, 於 : International Journal of Nanotechnology. 12, 1-2, p. 59-73 15 p.

研究成果: 雜誌貢獻文章

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

Lin, K. C., Juan, P. C., Liu, C. H., Wang, M. C. & Chou, C. H., 2015 一月 1, 於 : Microelectronics Reliability. 55, 11, p. 2198-2202 5 p.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

Structural optimizations of silicon based NMOSFETs with a sunken STI pattern by using a robust stress simulation methodology

Lee, C. C., Liu, C-H., Cheng, H. C. & Deng, R. H., 2015 一月 1, 於 : Journal of Nanoscience and Nanotechnology. 15, 3, p. 2179-2184 6 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)
2014

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Wang, M. C., Wang, S. J., Huang, H. S., Chen, S. Y., Peng, M. R., Ji, L. R., Lu, M. F., Liao, W. S. & Liu, C. H., 2014, 於 : International Journal of Nanotechnology. 11, 1-4, p. 62-74 13 p.

研究成果: 雜誌貢獻文章

Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Lee, C. C., Liu, C. H., Hsu, H. W. & Hung, M. H., 2014 四月 30, 於 : Thin Solid Films. 557, p. 311-315 5 p.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Lin, K. C., Twu, M. J., Juan, P. C., Hsu, H. W., Huang, H. S., Wang, M. C. & Liu, C. H., 2014, 於 : International Journal of Nanotechnology. 11, 1-4, p. 27-39 13 p.

研究成果: 雜誌貢獻文章

Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern

Lee, C. C., Liu, C. H., Deng, R. H., Hsu, H. W. & Chiang, K. N., 2014 四月 30, 於 : Thin Solid Films. 557, p. 323-328 6 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Mechanical property effects of Si1 - XGex channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide- semiconductor field effect transistors

Lee, C. C., Cheng, H. C., Hsu, H. W., Chen, Z. H., Teng, H. H. & Liu, C. H., 2014 四月 30, 於 : Thin Solid Films. 557, p. 316-322 7 p.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

Positive bias temperature instability in p -type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Samanta, P., Huang, H. S., Chen, S. Y., Liu, C. H. & Cheng, L. W., 2014 二月 21, 於 : Journal of Applied Physics. 115, 7, 074502.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers

Wang, M. C., Huang, H. S., Peng, M. R., Wang, S. J., Chen, T. Y., Liao, W. S., Yang, H. C. & Liu, C. H., 2014, 於 : International Journal of Materials and Product Technology. 49, 1, p. 25-40 16 p.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)
2013

Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel

Hsu, H. W., Huang, H. S., Lee, C. C., Chen, S. Y., Teng, H. H., Peng, M. R., Wang, M. C. & Liu, C-H., 2013 十二月 1, 於 : Journal of Nanoscience and Nanotechnology. 13, 12, p. 8127-8132 6 p.

研究成果: 雜誌貢獻文章

6 引文 斯高帕斯(Scopus)

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Juan, P. C., Sun, C. L., Liu, C. H., Lin, C. L., Mong, F. C., Huang, J. H. & Chang, H. S., 2013 五月 1, 於 : Microelectronic Engineering. 109, p. 142-147 6 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths

Hsu, H. W., Lin, K. C., Lee, C. C., Twu, M-J., Huang, H. S., Chen, S. Y., Peng, M. R., Teng, H. H. & Liu, C-H., 2013 十月 1, 於 : Thin Solid Films. 544, p. 120-124 5 p.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications

Juan, P. C., Lin, C. L., Liu, C. H., Chen, C. H., Chang, Y. K. & Yeh, L. Y., 2013 七月 31, 於 : Thin Solid Films. 539, p. 360-364 5 p.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

Juan, P. C., Liu, C. H., Lin, C. L., Mong, F. C. & Huang, J. H., 2013 四月 30, 於 : Microelectronic Engineering. 109, p. 172-176 5 p.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)
2012

Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

Huang, H. S., Samanta, P., Tzeng, T. J., Chen, S. Y. & Liu, C. H., 2012 一月 9, 於 : Applied Physics Letters. 100, 2, 023501.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics

Lin, K. C., Chen, J. Y., Hsu, H. W., Chen, H. W. & Liu, C-H., 2012 十一月 1, 於 : Solid-State Electronics. 77, p. 7-11 5 p.

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

ONO側壁與CESL對MOSFET通道應力影響之分析

楊煌偉(Huang-Wei Y, 鄧榮皓(Rong-Hou D, 蔡旻琦(Ming-Chi T, 屠名正(Ming-Jenq T & 劉傳璽(Chuan-Hsi L, 2012, 於 : 真空科技. 25, 3, p. 22-27 6 p.

研究成果: 雜誌貢獻文章

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Liu, C-H., Hsu, H. W., Chen, H. W., Juan, P. C., Wang, M. C., Cheng, C-P. & Huang, H. S., 2012 一月 1, 於 : Microelectronic Engineering. 89, 1, p. 15-18 4 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics

Liu, C. H., Juan, P. C., Chou, Y. H. & Hsu, H. W., 2012 一月 1, 於 : Microelectronic Engineering. 89, 1, p. 2-5 4 p.

研究成果: 雜誌貢獻文章

6 引文 斯高帕斯(Scopus)

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Hsu, H. W., Huang, H. S., Chen, H. W., Cheng, C-P., Lin, K. C., Chen, S. Y., Wang, M. C. & Liu, C-H., 2012 十一月 1, 於 : Solid-State Electronics. 77, p. 2-6 5 p.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)
2011
1 引文 斯高帕斯(Scopus)

Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

Juan, P. C., Hsu, C. W., Liu, C. H., Wang, M. T. & Yeh, L. Y., 2011 七月 1, 於 : Microelectronic Engineering. 88, 7, p. 1217-1220 4 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Motion estimation using two-stage predictive search algorithms based on joint spatio-temporal correlation information

Hsieh, L., Chen, W. S. & Liu, C. H., 2011 九月, 於 : Expert Systems with Applications. 38, 9, p. 11608-11623 16 p.

研究成果: 雜誌貢獻文章

13 引文 斯高帕斯(Scopus)
2010

A genome-wide quantitative trait loci scan of neurocognitive performances in families with schizophrenia

Lien, Y. J., Liu, C. M., Faraone, S. V., Tsuang, M. T., Hwu, H. G., Hsiao, P. C. & Chen, W. J., 2010 十月 1, 於 : Genes, Brain and Behavior. 9, 7, p. 695-702 8 p.

研究成果: 雜誌貢獻文章

17 引文 斯高帕斯(Scopus)
7 引文 斯高帕斯(Scopus)

Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

Chen, H. W. & Liu, C-H., 2010 五月 1, 於 : Microelectronics Reliability. 50, 5, p. 614-617 4 p.

研究成果: 雜誌貢獻文章

7 引文 斯高帕斯(Scopus)

Promoting of charged-device model/electrostatic discharge immunity in the dicing saw process

Wang, M. C., Liu, C-H., Huang, K. S., Hsieh, Z. Y., Chen, S. Y., Yang, H. C. & Lin, C. R., 2010 六月 1, 於 : Microelectronics Reliability. 50, 6, p. 839-846 8 p.

研究成果: 雜誌貢獻文章

Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs

Huang, H. S., Wang, M. C., Hsieh, Z. Y., Chen, S. Y., Chuang, A. E. & Liu, C-H., 2010 五月 1, 於 : Solid-State Electronics. 54, 5, p. 527-529 3 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

Liu, C-H., Juan, P. C. & Lin, J. Y., 2010 十月 1, 於 : Thin Solid Films. 518, 24, p. 7455-7459 5 p.

研究成果: 雜誌貢獻文章

16 引文 斯高帕斯(Scopus)
9 引文 斯高帕斯(Scopus)
2009

Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

Liu, C. H., Chen, H. W., Chen, S. Y., Huang, H. S. & Cheng, L. W., 2009 七月 20, 於 : Applied Physics Letters. 95, 1, 012103.

研究成果: 雜誌貢獻文章

34 引文 斯高帕斯(Scopus)

Electrical characterization and dielectric properties of metal-oxide-semiconductor structures using high-K CeZrO4 ternary oxide as gate dielectric

Juan, P. C., Liu, C-H., Lin, C. L., Ju, S. C., Chen, M. G., Chanf, I. Y. K. & Lu, J. H., 2009 五月 1, 於 : Japanese Journal of Applied Physics. 48, 5 PART 2

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

National project on 45 to 32 nm metal oxide semiconductor field effect transistors for next century IC fabrications

Hwang, H. L., Wang, C. W., Chang, K. H., Tsai, C. H., Leou, K. C., Chang-Liao, K. S., Lu, C. C., Chang, S. C., Liu, C. H., Chin, A., Chang, K. M. & Chen, B. N., 2009 四月 4, 於 : e-Journal of Surface Science and Nanotechnology. 7, p. 507-512 6 p.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)
2008

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Chen, H. W., Chen, S. Y., Chen, K. C., Huang, H. S., Liu, C. H., Chiu, F. C., Liu, K. W., Lin, K. C., Cheng, L. W., Lin, C. T., Ma, G. H. & Sun, S. W., 2008 七月 30, 於 : Applied Surface Science. 254, 19, p. 6127-6130 4 p.

研究成果: 雜誌貢獻文章

14 引文 斯高帕斯(Scopus)

Interface characterization and current conduction in HfO 2 -gated MOS capacitors

Chen, H. W., Chiu, F. C., Liu, C. H., Chen, S. Y., Huang, H. S., Juan, P. C. & Hwang, H. L., 2008 七月 30, 於 : Applied Surface Science. 254, 19, p. 6112-6115 4 p.

研究成果: 雜誌貢獻文章

30 引文 斯高帕斯(Scopus)
2007

Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

Liu, C. H. & Chiu, F. C., 2007 一月 1, 於 : IEEE Electron Device Letters. 28, 1, p. 62-64 3 p.

研究成果: 雜誌貢獻文章

12 引文 斯高帕斯(Scopus)