• 633 引文
  • 14 h-指數
19972019

每年研究成果

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研究成果

2008

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Chen, H. W., Chen, S. Y., Chen, K. C., Huang, H. S., Liu, C. H., Chiu, F. C., Liu, K. W., Lin, K. C., Cheng, L. W., Lin, C. T., Ma, G. H. & Sun, S. W., 2008 七月 30, 於 : Applied Surface Science. 254, 19, p. 6127-6130 4 p.

研究成果: 雜誌貢獻文章

14 引文 斯高帕斯(Scopus)

Hot carrier reliability of ald HfSiON gated MOSFETs with different compositions

Chen, H. W., Chen, S. Y., Lu, C. C., Liu, C. H., Chiu, F. C., Hsieh, Z. Y., Huang, H. S., Cheng, L. W., Lin, C. T., Ma, G. H. & Sun, S. W., 2008, ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 編輯 p. 55-66 12 p. (ECS Transactions; 卷 16, 編號 5).

研究成果: 書貢獻/報告類型會議貢獻

Interface characterization and current conduction in HfO 2 -gated MOS capacitors

Chen, H. W., Chiu, F. C., Liu, C. H., Chen, S. Y., Huang, H. S., Juan, P. C. & Hwang, H. L., 2008 七月 30, 於 : Applied Surface Science. 254, 19, p. 6112-6115 4 p.

研究成果: 雜誌貢獻文章

30 引文 斯高帕斯(Scopus)

Interfacial and electrical characterization of hfo2-gated MOSCs and MOSFETs by C-V and gated-diode method

Chen, S. Y., Chen, H. W., Chen, C. H., Chiu, F. C., Liu, C. H., Hsieh, Z. Y., Huang, H. S. & Hwang, H. L., 2008, ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 編輯 p. 131-138 8 p. (ECS Transactions; 卷 16, 編號 5).

研究成果: 書貢獻/報告類型會議貢獻

6 引文 斯高帕斯(Scopus)

Interfacial characterization of ceo2-gatcd MOSFETs using gated-diode method and charge pumping technique

Chm, F. C., Chen, H. W., Chen, C. H., Liu, C. H., Chen, S. Y., Huang, B. S., Hsieh, Z. Y., Huang, H. S. & Hwang, H. L., 2008, ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 編輯 p. 423-432 10 p. (ECS Transactions; 卷 16, 編號 5).

研究成果: 書貢獻/報告類型會議貢獻

National Project on 45 to 32 nm metal oxide semiconductor field effect transistors for next century IC fabrications

Hwang, H. L., Wang, C. W., Chang, K. H., Tsai, C. H., Leou, K. C., Chang-Liao, K. S., Lu, C. C., Chang, S. C., Chiu, F. C., Liu, C. H., Chin, A., Chang, K. M. & Chen, B. N., 2008 十二月 1, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 4760691. (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

研究成果: 書貢獻/報告類型會議貢獻

Robots with object-oriented peripheral modules controlled by a Personal Single Board Computer (PSBC)

Liu, C-H., Hsu, H. W., Chen, J. Y., Chao, J., Pao, H. & Chang, J., 2008 十二月 1, IEEE International Conference on Advanced Robotics and its Social Impacts, ARSO 2008. 4653614. (Proceedings of IEEE Workshop on Advanced Robotics and its Social Impacts, ARSO).

研究成果: 書貢獻/報告類型會議貢獻

2007

Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

Liu, C. H. & Chiu, F. C., 2007 一月 1, 於 : IEEE Electron Device Letters. 28, 1, p. 62-64 3 p.

研究成果: 雜誌貢獻文章

12 引文 斯高帕斯(Scopus)

Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs

Liu, C. H. & Pan, T. M., 2007 七月 1, 於 : IEEE Transactions on Electron Devices. 54, 7, p. 1799-1803 5 p.

研究成果: 雜誌貢獻文章

12 引文 斯高帕斯(Scopus)

On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs

Chen, S. Y., Tu, C. H., Lin, J. C., Chen, Y. T., Zhuang, S. J., Huang, H. S., Liu, C. H., Chou, S. & Ko, J., 2007 一月 1, 於 : Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an. 30, 5, p. 847-853 7 p.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Liu, C. H., Pan, T. M., Shu, W. H. & Huang, K. C., 2007 六月 20, 於 : Electrochemical and Solid-State Letters. 10, 8, p. G54-G57

研究成果: 雜誌貢獻文章

10 引文 斯高帕斯(Scopus)
2006

Magnetic relaxation measurement in immunoassay using high-transition- temperature superconducting quantum interference device system

Yang, H-C., Yang, S-Y., Fang, G. L., Huang, W. H., Liu, C-H., Liao, S-H., Horng, H-E. & Hong, C. Y., 2006 七月 11, 於 : Journal of Applied Physics. 99, 12, 124701.

研究成果: 雜誌貢獻文章

27 引文 斯高帕斯(Scopus)

On the design and analysis of the 4th-order leapfrog sigma-delta modulator

Lin, K. C. & Liu, C. H., 2006, 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings - Circuits and Systems. 卷 4. p. 2304-2308 5 p. 4064385

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)
2005
4 引文 斯高帕斯(Scopus)
1 引文 斯高帕斯(Scopus)
2003

NBTI mechanism explored on the back gate bias for pMOSFETs

Chen, M. G., Li, J. S., Jiang, C., Liu, C. H., Su, K. C. & Chang, Y. H., 2003 一月 1, 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003. Institute of Electrical and Electronics Engineers Inc., p. 131-132 2 p. 1283319. (IEEE International Integrated Reliability Workshop Final Report; 卷 2003-January).

研究成果: 書貢獻/報告類型會議貢獻

5 引文 斯高帕斯(Scopus)
2002

Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

Pan, T. M., Lin, H. S., Chen, M. G., Liu, C. H. & Chang, Y. J., 2002 七月, 於 : IEEE Electron Device Letters. 23, 7, p. 416-418 3 p.

研究成果: 雜誌貢獻文章

7 引文 斯高帕斯(Scopus)

ESD protection for the tolerant I/O circuits using PESD implantation

Tang, H. T. H., Chen, S. S., Liu, S., Lee, M. T., Liu, C. H., Wang, M. C. & Jeng, M. C., 2002 三月 1, 於 : Journal of Electrostatics. 54, 3-4, p. 293-300 8 p.

研究成果: 雜誌貢獻文章

16 引文 斯高帕斯(Scopus)

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., Chien, S. C. 及其他3, Loh, Y. T., Chang, Y. J. & Liou, F. T., 2002 一月 1, 於 : Annual Proceedings - Reliability Physics (Symposium). p. 268-271 4 p.

研究成果: 雜誌貢獻Conference article

2 引文 斯高帕斯(Scopus)

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., Chien, S. C. 及其他3, Loh, Y. T., Chang, Y. J. & Liou, F. T., 2002 一月 1, 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual. Institute of Electrical and Electronics Engineers Inc., p. 268-271 4 p. 996646. (IEEE International Reliability Physics Symposium Proceedings; 卷 2002-January).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Loh, Y. T., Liou, F. T., Schruefer, K., Katsetos, A. A., Yang, Z., Rovedo, N., Hook, T. B., Wann, C. & Chen, T. C., 2002 四月, 於 : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 4 B, p. 2423-2425 3 p.

研究成果: 雜誌貢獻文章

51 引文 斯高帕斯(Scopus)
2001

High performance 50 nm CMOS devices for microprocessor and embedded processor core applications

Huang, S. F., Lin, C. Y., Huang, Y. S., Schafbauer, T., Eller, M., Cheng, Y. C., Cheng, S. M., Sportouch, S., Jin, W., Rovedo, N., Grassmann, A., Huang, Y., Brighten, J., Liu, C. H., Von Ehrenwall, B., Chen, N., Chen, J., Park, O. S., Commons, M., Thomas, A. 及其他8, Lee, M. T., Rauch, S., Clevenger, L., Kaltalioglu, E., Leung, P., Chen, J., Schiml, T. & Wann, C., 2001 一月 1, 於 : Technical Digest-International Electron Devices Meeting. p. 237-240 4 p.

研究成果: 雜誌貢獻文章

39 引文 斯高帕斯(Scopus)

Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown

Chen, M. J., Kang, T. K., Lee, Y. H., Liu, C. H., Chang, Y. J. & Fu, K. Y., 2001 一月 1, 於 : Journal of Applied Physics. 89, 1, p. 648-653 6 p.

研究成果: 雜誌貢獻文章

9 引文 斯高帕斯(Scopus)

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Schruefer, K., Brighten, J., Rovedo, N., Hook, T. B., Khare, M. V., Huang, S. F., Wann, C., Chen, T. C. & Ning, T. H., 2001 一月 1, 於 : Technical Digest-International Electron Devices Meeting. p. 861-864 4 p.

研究成果: 雜誌貢獻文章

44 引文 斯高帕斯(Scopus)

Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism

Kang, T. K., Chen, M. J., Liu, C. H., Chang, Y. J. & Fan, S. K., 2001 十月 1, 於 : IEEE Transactions on Electron Devices. 48, 10, p. 2317-2322 6 p.

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)
2000

Comparison and correlation of ESD HBM (Human Body Model) obtained between TLPG, wafer-level, and package-level tests

Lee, M. T., Liu, C. H., Lin, C. C., Chou, J. T., Tang, H. T. H., Chang, Y. J. & Fu, K. Y., 2000 十二月 1, 於 : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 105-110 6 p.

研究成果: 雜誌貢獻Conference article

2 引文 斯高帕斯(Scopus)

Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Chen, M. J., Kang, T. K., Huang, H. T., Liu, C. H., Chang, Y. J. & Fu, K. Y., 2000 八月 1, 於 : IEEE Transactions on Electron Devices. 47, 8, p. 1682-1683 2 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Negative bias temperature instability (NBTI) in deep sub-micron p+-gate pMOSFETs

Chen, Y. F., Lin, M. H., Chou, C. H., Chang, W. C., Huang, S. C., Chang, Y. J., Fu, K. Y., Lee, M. T., Liu, C-H. & Fan, S. K., 2000 十二月 1, p. 98-101. 4 p.

研究成果: 會議貢獻類型

20 引文 斯高帕斯(Scopus)

Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides

Chen, M. J., Kang, T. K., Liu, C. H., Chang, Y. J. & Fu, K. Y., 2000 七月 24, 於 : Applied Physics Letters. 77, 4, p. 555-557 3 p.

研究成果: 雜誌貢獻文章

23 引文 斯高帕斯(Scopus)
1999

Analysis of hot-carrier degradation in 0.25-μm surface-channel pMOSFET devices

Liu, C. H., Chen, M. G., Huang-Lu, S., Chang, Y. J. & Fu, K. Y., 1999 一月 1, 於 : International Symposium on VLSI Technology, Systems, and Applications, Proceedings. p. 82-85 4 p.

研究成果: 雜誌貢獻Conference article

4 引文 斯高帕斯(Scopus)

Modeling and correlation of gate oxide QBD between exponential current ramp and constant current stresses

Liu, C-H., Cheng, T. J., Wang, M. C., Yang, S. H. & Fu, K. Y., 1999 一月 1, 於 : International Symposium on VLSI Technology, Systems, and Applications, Proceedings. p. 94-95 2 p.

研究成果: 雜誌貢獻Conference article

1 引文 斯高帕斯(Scopus)

New experimental findings on SILC and SBD of ultra-thin gate oxides

Chen, M. G., Liu, C-H., Lee, M. T. & Fu, K. Y., 1999 十二月 1, p. 114-117. 4 p.

研究成果: 會議貢獻類型

Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Kim, J. H., Sanchez, J. J., DeMassa, T. A., Quddus, M. T., Grondin, R. O. & Liu, C. H., 1999 一月 1, 於 : Solid-State Electronics. 43, 1, p. 57-63 7 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)
1998

New mechanism for gate oxide degradation and its applications

Liu, C. H., Fu, K. Y., DeMassa, T. A. & Sanchez, J. J., 1998, International Integrated Reliability Workshop Final Report. IEEE, p. 68-71 4 p.

研究成果: 書貢獻/報告類型會議貢獻

Surface plasmons and breakdown in thin silicon dioxide films on silicon

Kim, J. H., Sanchez, J. J., DeMassa, T. A., Quddus, M. T., Smith, D., Shaapur, F., Weiss, K. & Liu, C-H., 1998 八月 1, 於 : Journal of Applied Physics. 84, 3, p. 1430-1438 9 p.

研究成果: 雜誌貢獻文章

16 引文 斯高帕斯(Scopus)
1997

Breakdown model and lifetime projection for thin gate oxide MOS devices

Liu, C-H., Grondin, R. O., DeMassa, T. A. & Sanchez, J. J., 1997 十二月 1, 於 : Biennial University/Government/Industry Microelectronics Symposium - Proceedings. p. 78-82 5 p.

研究成果: 雜誌貢獻Conference article