• 633 引文
  • 14 h-指數
19972019

每年研究成果

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研究成果

Conference article

Adaptive Fuzzy Cerebellar Model Articulation Controller for two-wheeled robot

Chen, J. Y., Lin, K. C., Tsai, P. S., Liu, C-H. & Ouyang, J. M., 2012 四月 4, 於 : Advanced Materials Research. 482-484, p. 1025-1036 12 p.

研究成果: 雜誌貢獻Conference article

Analysis of hot-carrier degradation in 0.25-μm surface-channel pMOSFET devices

Liu, C. H., Chen, M. G., Huang-Lu, S., Chang, Y. J. & Fu, K. Y., 1999 一月 1, 於 : International Symposium on VLSI Technology, Systems, and Applications, Proceedings. p. 82-85 4 p.

研究成果: 雜誌貢獻Conference article

4 引文 斯高帕斯(Scopus)

Breakdown model and lifetime projection for thin gate oxide MOS devices

Liu, C-H., Grondin, R. O., DeMassa, T. A. & Sanchez, J. J., 1997 十二月 1, 於 : Biennial University/Government/Industry Microelectronics Symposium - Proceedings. p. 78-82 5 p.

研究成果: 雜誌貢獻Conference article

Comparison and correlation of ESD HBM (Human Body Model) obtained between TLPG, wafer-level, and package-level tests

Lee, M. T., Liu, C. H., Lin, C. C., Chou, J. T., Tang, H. T. H., Chang, Y. J. & Fu, K. Y., 2000 十二月 1, 於 : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 105-110 6 p.

研究成果: 雜誌貢獻Conference article

2 引文 斯高帕斯(Scopus)

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., Chien, S. C. 及其他3, Loh, Y. T., Chang, Y. J. & Liou, F. T., 2002 一月 1, 於 : Annual Proceedings - Reliability Physics (Symposium). p. 268-271 4 p.

研究成果: 雜誌貢獻Conference article

2 引文 斯高帕斯(Scopus)

Modeling and correlation of gate oxide QBD between exponential current ramp and constant current stresses

Liu, C-H., Cheng, T. J., Wang, M. C., Yang, S. H. & Fu, K. Y., 1999 一月 1, 於 : International Symposium on VLSI Technology, Systems, and Applications, Proceedings. p. 94-95 2 p.

研究成果: 雜誌貢獻Conference article

1 引文 斯高帕斯(Scopus)
文章

A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash with Excellent Immunity to Sneak Path

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Chen, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2017 十二月 1, 於 : IEEE Transactions on Electron Devices. 64, 12, p. 4910-4918 9 p., 8089812.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)
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3 引文 斯高帕斯(Scopus)
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3 引文 斯高帕斯(Scopus)

A genome-wide quantitative trait loci scan of neurocognitive performances in families with schizophrenia

Lien, Y. J., Liu, C. M., Faraone, S. V., Tsuang, M. T., Hwu, H. G., Hsiao, P. C. & Chen, W. J., 2010 十月 1, 於 : Genes, Brain and Behavior. 9, 7, p. 695-702 8 p.

研究成果: 雜誌貢獻文章

17 引文 斯高帕斯(Scopus)
開啟存取
3 引文 斯高帕斯(Scopus)

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Wang, M. C., Wang, S. J., Huang, H. S., Chen, S. Y., Peng, M. R., Ji, L. R., Lu, M. F., Liao, W. S. & Liu, C. H., 2014, 於 : International Journal of Nanotechnology. 11, 1-4, p. 62-74 13 p.

研究成果: 雜誌貢獻文章

Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

Pan, T. M., Lin, H. S., Chen, M. G., Liu, C. H. & Chang, Y. J., 2002 七月, 於 : IEEE Electron Device Letters. 23, 7, p. 416-418 3 p.

研究成果: 雜誌貢獻文章

7 引文 斯高帕斯(Scopus)

Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel

Hsu, H. W., Huang, H. S., Lee, C. C., Chen, S. Y., Teng, H. H., Peng, M. R., Wang, M. C. & Liu, C-H., 2013 十二月 1, 於 : Journal of Nanoscience and Nanotechnology. 13, 12, p. 8127-8132 6 p.

研究成果: 雜誌貢獻文章

6 引文 斯高帕斯(Scopus)

Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

Liu, C. H., Chen, H. W., Chen, S. Y., Huang, H. S. & Cheng, L. W., 2009 七月 20, 於 : Applied Physics Letters. 95, 1, 012103.

研究成果: 雜誌貢獻文章

34 引文 斯高帕斯(Scopus)
1 引文 斯高帕斯(Scopus)

Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays

Lee, C. C., Liu, C. H., Li, D. Y. & Hsieh, C. P., 2018 四月 1, 於 : Microelectronics Reliability. 83, p. 230-234 5 p.

研究成果: 雜誌貢獻文章

Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Lee, C. C., Liu, C. H., Hsu, H. W. & Hung, M. H., 2014 四月 30, 於 : Thin Solid Films. 557, p. 311-315 5 p.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Juan, P. C., Sun, C. L., Liu, C. H., Lin, C. L., Mong, F. C., Huang, J. H. & Chang, H. S., 2013 五月 1, 於 : Microelectronic Engineering. 109, p. 142-147 6 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)
7 引文 斯高帕斯(Scopus)

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Chen, H. W., Chen, S. Y., Chen, K. C., Huang, H. S., Liu, C. H., Chiu, F. C., Liu, K. W., Lin, K. C., Cheng, L. W., Lin, C. T., Ma, G. H. & Sun, S. W., 2008 七月 30, 於 : Applied Surface Science. 254, 19, p. 6127-6130 4 p.

研究成果: 雜誌貢獻文章

14 引文 斯高帕斯(Scopus)

Electrical characterization and dielectric properties of metal-oxide-semiconductor structures using high-K CeZrO4 ternary oxide as gate dielectric

Juan, P. C., Liu, C-H., Lin, C. L., Ju, S. C., Chen, M. G., Chanf, I. Y. K. & Lu, J. H., 2009 五月 1, 於 : Japanese Journal of Applied Physics. 48, 5 PART 2

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

Liu, C. H. & Chiu, F. C., 2007 一月 1, 於 : IEEE Electron Device Letters. 28, 1, p. 62-64 3 p.

研究成果: 雜誌貢獻文章

12 引文 斯高帕斯(Scopus)

Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

Huang, H. S., Samanta, P., Tzeng, T. J., Chen, S. Y. & Liu, C. H., 2012 一月 9, 於 : Applied Physics Letters. 100, 2, 023501.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

ESD protection for the tolerant I/O circuits using PESD implantation

Tang, H. T. H., Chen, S. S., Liu, S., Lee, M. T., Liu, C. H., Wang, M. C. & Jeng, M. C., 2002 三月 1, 於 : Journal of Electrostatics. 54, 3-4, p. 293-300 8 p.

研究成果: 雜誌貢獻文章

16 引文 斯高帕斯(Scopus)

Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Chen, M. J., Kang, T. K., Huang, H. T., Liu, C. H., Chang, Y. J. & Fu, K. Y., 2000 八月 1, 於 : IEEE Transactions on Electron Devices. 47, 8, p. 1682-1683 2 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment

Wang, S. J., Wang, M. C., Chen, S. Y., Lan, W. H., Yang, B. W., Huang, L. S. & Liu, C. H., 2015 一月 1, 於 : Microelectronics Reliability. 55, 11, p. 2203-2207 5 p.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

High performance 50 nm CMOS devices for microprocessor and embedded processor core applications

Huang, S. F., Lin, C. Y., Huang, Y. S., Schafbauer, T., Eller, M., Cheng, Y. C., Cheng, S. M., Sportouch, S., Jin, W., Rovedo, N., Grassmann, A., Huang, Y., Brighten, J., Liu, C. H., Von Ehrenwall, B., Chen, N., Chen, J., Park, O. S., Commons, M., Thomas, A. 及其他8, Lee, M. T., Rauch, S., Clevenger, L., Kaltalioglu, E., Leung, P., Chen, J., Schiml, T. & Wann, C., 2001 一月 1, 於 : Technical Digest-International Electron Devices Meeting. p. 237-240 4 p.

研究成果: 雜誌貢獻文章

39 引文 斯高帕斯(Scopus)

Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs

Liu, C. H. & Pan, T. M., 2007 七月 1, 於 : IEEE Transactions on Electron Devices. 54, 7, p. 1799-1803 5 p.

研究成果: 雜誌貢獻文章

12 引文 斯高帕斯(Scopus)

Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

Chen, H. W. & Liu, C-H., 2010 五月 1, 於 : Microelectronics Reliability. 50, 5, p. 614-617 4 p.

研究成果: 雜誌貢獻文章

7 引文 斯高帕斯(Scopus)

Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Lin, K. C., Twu, M. J., Juan, P. C., Hsu, H. W., Huang, H. S., Wang, M. C. & Liu, C. H., 2014, 於 : International Journal of Nanotechnology. 11, 1-4, p. 27-39 13 p.

研究成果: 雜誌貢獻文章

Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

Juan, P. C., Hsu, C. W., Liu, C. H., Wang, M. T. & Yeh, L. Y., 2011 七月 1, 於 : Microelectronic Engineering. 88, 7, p. 1217-1220 4 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Integration of ARCS motivational model and it to enhance students learning in the context of atayal culture

Chao, J., Jiang, T. W., Yeh, Y. H., Liu, C. H. & Lin, C. M., 2019 一月 1, 於 : Eurasia Journal of Mathematics, Science and Technology Education. 15, 11, em1771.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

Interface characterization and current conduction in HfO 2 -gated MOS capacitors

Chen, H. W., Chiu, F. C., Liu, C. H., Chen, S. Y., Huang, H. S., Juan, P. C. & Hwang, H. L., 2008 七月 30, 於 : Applied Surface Science. 254, 19, p. 6112-6115 4 p.

研究成果: 雜誌貢獻文章

30 引文 斯高帕斯(Scopus)

Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern

Lee, C. C., Liu, C. H., Deng, R. H., Hsu, H. W. & Chiang, K. N., 2014 四月 30, 於 : Thin Solid Films. 557, p. 323-328 6 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures

Wang, S. J., Wang, M. C., Lee, W. D., Chen, W. S., Huang, H. S., Chen, S. Y., Huang Ms, L. S. & Liu, C. H., 2015, 於 : International Journal of Nanotechnology. 12, 1-2, p. 59-73 15 p.

研究成果: 雜誌貢獻文章

Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics

Lin, K. C., Chen, J. Y., Hsu, H. W., Chen, H. W. & Liu, C-H., 2012 十一月 1, 於 : Solid-State Electronics. 77, p. 7-11 5 p.

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

Lin, K. C., Juan, P. C., Liu, C. H., Wang, M. C. & Chou, C. H., 2015 一月 1, 於 : Microelectronics Reliability. 55, 11, p. 2198-2202 5 p.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown

Chen, M. J., Kang, T. K., Lee, Y. H., Liu, C. H., Chang, Y. J. & Fu, K. Y., 2001 一月 1, 於 : Journal of Applied Physics. 89, 1, p. 648-653 6 p.

研究成果: 雜誌貢獻文章

9 引文 斯高帕斯(Scopus)

Magnetic relaxation measurement in immunoassay using high-transition- temperature superconducting quantum interference device system

Yang, H-C., Yang, S-Y., Fang, G. L., Huang, W. H., Liu, C-H., Liao, S-H., Horng, H-E. & Hong, C. Y., 2006 七月 11, 於 : Journal of Applied Physics. 99, 12, 124701.

研究成果: 雜誌貢獻文章

27 引文 斯高帕斯(Scopus)

Mechanical property effects of Si1 - XGex channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide- semiconductor field effect transistors

Lee, C. C., Cheng, H. C., Hsu, H. W., Chen, Z. H., Teng, H. H. & Liu, C. H., 2014 四月 30, 於 : Thin Solid Films. 557, p. 316-322 7 p.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Schruefer, K., Brighten, J., Rovedo, N., Hook, T. B., Khare, M. V., Huang, S. F., Wann, C., Chen, T. C. & Ning, T. H., 2001 一月 1, 於 : Technical Digest-International Electron Devices Meeting. p. 861-864 4 p.

研究成果: 雜誌貢獻文章

44 引文 斯高帕斯(Scopus)
4 引文 斯高帕斯(Scopus)

Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Loh, Y. T., Liou, F. T., Schruefer, K., Katsetos, A. A., Yang, Z., Rovedo, N., Hook, T. B., Wann, C. & Chen, T. C., 2002 四月, 於 : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 4 B, p. 2423-2425 3 p.

研究成果: 雜誌貢獻文章

51 引文 斯高帕斯(Scopus)

Motion estimation using two-stage predictive search algorithms based on joint spatio-temporal correlation information

Hsieh, L., Chen, W. S. & Liu, C. H., 2011 九月, 於 : Expert Systems with Applications. 38, 9, p. 11608-11623 16 p.

研究成果: 雜誌貢獻文章

13 引文 斯高帕斯(Scopus)

National project on 45 to 32 nm metal oxide semiconductor field effect transistors for next century IC fabrications

Hwang, H. L., Wang, C. W., Chang, K. H., Tsai, C. H., Leou, K. C., Chang-Liao, K. S., Lu, C. C., Chang, S. C., Liu, C. H., Chin, A., Chang, K. M. & Chen, B. N., 2009 四月 4, 於 : e-Journal of Surface Science and Nanotechnology. 7, p. 507-512 6 p.

研究成果: 雜誌貢獻文章

Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism

Kang, T. K., Chen, M. J., Liu, C. H., Chang, Y. J. & Fan, S. K., 2001 十月 1, 於 : IEEE Transactions on Electron Devices. 48, 10, p. 2317-2322 6 p.

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

ONO側壁與CESL對MOSFET通道應力影響之分析

楊煌偉(Huang-Wei Y, 鄧榮皓(Rong-Hou D, 蔡旻琦(Ming-Chi T, 屠名正(Ming-Jenq T & 劉傳璽(Chuan-Hsi L, 2012, 於 : 真空科技. 25, 3, p. 22-27 6 p.

研究成果: 雜誌貢獻文章