• 633 引文
  • 14 h-指數
19972019

每年研究成果

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研究成果

A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash with Excellent Immunity to Sneak Path

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Chen, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2017 十二月 1, 於 : IEEE Transactions on Electron Devices. 64, 12, p. 4910-4918 9 p., 8089812.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)
開啟存取
3 引文 斯高帕斯(Scopus)
開啟存取
3 引文 斯高帕斯(Scopus)

Adaptive Fuzzy Cerebellar Model Articulation Controller for two-wheeled robot

Chen, J. Y., Lin, K. C., Tsai, P. S., Liu, C-H. & Ouyang, J. M., 2012 四月 4, 於 : Advanced Materials Research. 482-484, p. 1025-1036 12 p.

研究成果: 雜誌貢獻Conference article

Adaptive fuzzy control of two-wheeled balancing vehicle

Chen, J. Y., Liu, C. H., Chen, C. C. & Lin, K. C., 2011 十二月 1, Proceedings - 2011 International Conference on Instrumentation, Measurement, Computer, Communication and Control, IMCCC 2011. p. 341-344 4 p. 6154070. (Proceedings - 2011 International Conference on Instrumentation, Measurement, Computer, Communication and Control, IMCCC 2011).

研究成果: 書貢獻/報告類型會議貢獻

A genome-wide quantitative trait loci scan of neurocognitive performances in families with schizophrenia

Lien, Y. J., Liu, C. M., Faraone, S. V., Tsuang, M. T., Hwu, H. G., Hsiao, P. C. & Chen, W. J., 2010 十月 1, 於 : Genes, Brain and Behavior. 9, 7, p. 695-702 8 p.

研究成果: 雜誌貢獻文章

17 引文 斯高帕斯(Scopus)

Ameliorated particle swarm optimization by integrating Taguchi methods

Liu, C-H., Chen, Y. L. & Chen, J. Y., 2010 十一月 15, 2010 International Conference on Machine Learning and Cybernetics, ICMLC 2010. p. 1823-1828 6 p. 5580960. (2010 International Conference on Machine Learning and Cybernetics, ICMLC 2010; 卷 4).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

An adaptive PID controller

Chen, J. Y., Liu, C. H., Fan, C. W., Shin, H. Y. & Yen, M. H., 2010 十一月 15, 2010 International Conference on Machine Learning and Cybernetics, ICMLC 2010. p. 884-889 6 p. 5580596. (2010 International Conference on Machine Learning and Cybernetics, ICMLC 2010; 卷 2).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

Analysis of hot-carrier degradation in 0.25-μm surface-channel pMOSFET devices

Liu, C. H., Chen, M. G., Huang-Lu, S., Chang, Y. J. & Fu, K. Y., 1999 一月 1, 於 : International Symposium on VLSI Technology, Systems, and Applications, Proceedings. p. 82-85 4 p.

研究成果: 雜誌貢獻Conference article

4 引文 斯高帕斯(Scopus)

Analysis of promising copper wire bonding in assembly consideration

Wang, M. C., Hsieh, Z. Y., Huang, K. S., Liu, C. H. & Lin, C. R., 2009, IMPACT Conference 2009 International 3D IC Conference - Proceedings. p. 108-111 4 p. 5382168

研究成果: 書貢獻/報告類型會議貢獻

4 引文 斯高帕斯(Scopus)
開啟存取

A novel design of P-N staggered face-tunneling TFET targeting for low power and appropriate performance applications

Hsieh, E. R., Fan, Y. C., Chang, K. Y., Liu, C. H., Chien, C. H. & Chung, S. S., 2017 六月 7, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 7942487. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

研究成果: 書貢獻/報告類型會議貢獻

A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications

Cheng, H. W., Hsieh, E. R., Huang, Z. H., Chuang, C. H., Chen, C. H., Li, F. L., Lo, Y. M., Liu, C. H. & Chung, S. S., 2018 七月 3, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

研究成果: 書貢獻/報告類型會議貢獻

3 引文 斯高帕斯(Scopus)

A study of characteristics of halogen-free prevented solder materials

Wang, M. C., Shih, T. T., Lin, B. Y., Yang, H. C., Wu, Y. D. & Liu, C-H., 2012 十二月 1, ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging. p. 101-104 4 p. 6474579. (ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging).

研究成果: 書貢獻/報告類型會議貢獻

A study to performance of electroplating solder bump in assembly

Wang, M. C., Huang, K. S., Hsieh, Z. Y., Yang, H. C., Liu, C-H. & Lin, C. R., 2010 十一月 24, Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010. p. 794-797 4 p. 5582692. (Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

Augmented Reality in design and implementation of interactive recycling game

Chen, J. Y., Liu, C. H. & Wang, W. K., 2014 三月 10, Environment, Energy and Sustainable Development - Proceedings of the 2013 International Conference on Frontier of Energy and Environment Engineering, ICFEEE 2013. p. 805-808 4 p. (Environment, Energy and Sustainable Development - Proceedings of the 2013 International Conference on Frontier of Energy and Environment Engineering, ICFEEE 2013; 卷 2).

研究成果: 書貢獻/報告類型會議貢獻

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 十二月, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December).

研究成果: 書貢獻/報告類型會議貢獻

Body effect of SiGe and CESL strained nano-node NMOSFETs on (100) silicon substrate

Wang, M. C., Wu, G. W., Wang, S. J., Yang, H. C., Liao, W. S., Lu, M. F., Jhang, J. Z. & Liu, C. H., 2013 五月 27, p. 379-382. 4 p.

研究成果: 會議貢獻類型

1 引文 斯高帕斯(Scopus)

Breakdown model and lifetime projection for thin gate oxide MOS devices

Liu, C-H., Grondin, R. O., DeMassa, T. A. & Sanchez, J. J., 1997 十二月 1, 於 : Biennial University/Government/Industry Microelectronics Symposium - Proceedings. p. 78-82 5 p.

研究成果: 雜誌貢獻Conference article

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Wang, M. C., Wang, S. J., Huang, H. S., Chen, S. Y., Peng, M. R., Ji, L. R., Lu, M. F., Liao, W. S. & Liu, C. H., 2014, 於 : International Journal of Nanotechnology. 11, 1-4, p. 62-74 13 p.

研究成果: 雜誌貢獻文章

Comparison and correlation of ESD HBM (Human Body Model) obtained between TLPG, wafer-level, and package-level tests

Lee, M. T., Liu, C. H., Lin, C. C., Chou, J. T., Tang, H. T. H., Chang, Y. J. & Fu, K. Y., 2000 十二月 1, 於 : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 105-110 6 p.

研究成果: 雜誌貢獻Conference article

2 引文 斯高帕斯(Scopus)

Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

Pan, T. M., Lin, H. S., Chen, M. G., Liu, C. H. & Chang, Y. J., 2002 七月, 於 : IEEE Electron Device Letters. 23, 7, p. 416-418 3 p.

研究成果: 雜誌貢獻文章

7 引文 斯高帕斯(Scopus)

Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel

Hsu, H. W., Huang, H. S., Lee, C. C., Chen, S. Y., Teng, H. H., Peng, M. R., Wang, M. C. & Liu, C-H., 2013 十二月 1, 於 : Journal of Nanoscience and Nanotechnology. 13, 12, p. 8127-8132 6 p.

研究成果: 雜誌貢獻文章

6 引文 斯高帕斯(Scopus)

Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films

Chen, H. W., Hsu, H. W., Chen, S. Y., Huang, H. S., Wang, M. C. & Liu, C. H., 2011 九月 26, 4th IEEE International NanoElectronics Conference, INEC 2011. 5991686. (Proceedings - International NanoElectronics Conference, INEC).

研究成果: 書貢獻/報告類型會議貢獻

Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

Liu, C. H., Chen, H. W., Chen, S. Y., Huang, H. S. & Cheng, L. W., 2009 七月 20, 於 : Applied Physics Letters. 95, 1, 012103.

研究成果: 雜誌貢獻文章

34 引文 斯高帕斯(Scopus)
1 引文 斯高帕斯(Scopus)

Depth profiles and chemical bonding states of graded doping and ultra-thin HfLaO high-k dielectrics deposited on silicon substrate

Juan, P. C., Liu, C-H., Jou, M., Chen, Y. K., Liu, Y. W., Hsu, C. W., Chou, Y. H. & Lin, J. Y., 2010 五月 5, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. p. 672-673 2 p. 5424647. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

研究成果: 書貢獻/報告類型會議貢獻

Design of complementary tilt-gate TFETs with SiGe/Si and III-V integrations feasible for ultra-low-power applications

Hsieh, E. R., Lin, Y. S., Zhao, Y. B., Liu, C. H., Chien, C. H. & Chung, S. S., 2015 九月 24, 2015 Silicon Nanoelectronics Workshop, SNW 2015. Institute of Electrical and Electronics Engineers Inc., 7275322. (2015 Silicon Nanoelectronics Workshop, SNW 2015).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

Editorial: IEDMS 2016

Liu, C. H., Cheng, C. H., Cheng, C. P. & Liou, J. J., 2018 四月, 於 : Microelectronics Reliability. 83, 1 p.

研究成果: 雜誌貢獻社论

Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays

Lee, C. C., Liu, C. H., Li, D. Y. & Hsieh, C. P., 2018 四月 1, 於 : Microelectronics Reliability. 83, p. 230-234 5 p.

研究成果: 雜誌貢獻文章

Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

Samanta, P., Huang, H. S., Chen, S. Y. & Liu, C. H., 2014 三月 13, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 7061072. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

研究成果: 書貢獻/報告類型會議貢獻

Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Lee, C. C., Liu, C. H., Hsu, H. W. & Hung, M. H., 2014 四月 30, 於 : Thin Solid Films. 557, p. 311-315 5 p.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Juan, P. C., Sun, C. L., Liu, C. H., Lin, C. L., Mong, F. C., Huang, J. H. & Chang, H. S., 2013 五月 1, 於 : Microelectronic Engineering. 109, p. 142-147 6 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Efficiency improvement of organic light emitting diodes with co-deposited hole blocking layer

Liu, C. H., Tseng, C. H. & Cheng, C. P., 2010 一月 1, Diffusion in Solids and Liquids V. Trans Tech Publications Ltd, 卷 297-301. p. 561-566 6 p.

研究成果: 書貢獻/報告類型會議貢獻

Efficiency of dispenser with nozzle technology in assembly

Wang, M. C., Huang, K. S., Chen, S. Y., Hsieh, Z. Y., Yang, H. C., Liu, C-H. & Lin, C. R., 2010 十一月 24, Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010. p. 476-479 4 p. 5583781. (Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010).

研究成果: 書貢獻/報告類型會議貢獻

Electrical and reliability characteristics in strained-Si mOSFETs

Yang, C. C., Pan, T. M., Chen, K. M. & Liu, C. H., 2008 十一月 17, ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 編輯 p. 271-277 7 p. (ECS Transactions; 卷 13, 編號 2).

研究成果: 書貢獻/報告類型會議貢獻

7 引文 斯高帕斯(Scopus)

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Chen, H. W., Chen, S. Y., Chen, K. C., Huang, H. S., Liu, C. H., Chiu, F. C., Liu, K. W., Lin, K. C., Cheng, L. W., Lin, C. T., Ma, G. H. & Sun, S. W., 2008 七月 30, 於 : Applied Surface Science. 254, 19, p. 6127-6130 4 p.

研究成果: 雜誌貢獻文章

14 引文 斯高帕斯(Scopus)

Electrical characterization and dielectric properties of metal-oxide-semiconductor structures using high-K CeZrO4 ternary oxide as gate dielectric

Juan, P. C., Liu, C-H., Lin, C. L., Ju, S. C., Chen, M. G., Chanf, I. Y. K. & Lu, J. H., 2009 五月 1, 於 : Japanese Journal of Applied Physics. 48, 5 PART 2

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

Liu, C. H. & Chiu, F. C., 2007 一月 1, 於 : IEEE Electron Device Letters. 28, 1, p. 62-64 3 p.

研究成果: 雜誌貢獻文章

12 引文 斯高帕斯(Scopus)

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Wang, S. J., Peng, S. H., Hu, Y. M., Chen, S. Y., Huang, H. S., Wang, M. C., Yang, H. C. & Liu, C. H., 2013 五月 27, p. 309-312. 4 p.

研究成果: 會議貢獻類型

3 引文 斯高帕斯(Scopus)

Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

Huang, H. S., Samanta, P., Tzeng, T. J., Chen, S. Y. & Liu, C. H., 2012 一月 9, 於 : Applied Physics Letters. 100, 2, 023501.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

Embedded PUF on 14nm HKMG FinFET Platform: A Novel 2-bit-per-cell OTP-based Memory Feasible for IoT Secuirty Solution in 5G Era

Hsieh, E. R., Wang, H. W., Liu, C. H., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2019 六月, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T118-T119 8776515. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2019-June).

研究成果: 書貢獻/報告類型會議貢獻

ESD protection for the tolerant I/O circuits using PESD implantation

Tang, H. T. H., Chen, S. S., Liu, S., Lee, M. T., Liu, C. H., Wang, M. C. & Jeng, M. C., 2002 三月 1, 於 : Journal of Electrostatics. 54, 3-4, p. 293-300 8 p.

研究成果: 雜誌貢獻文章

16 引文 斯高帕斯(Scopus)

Exploring the spatial concepts and abilities of indigenous Atayal elementary school students in Taiwan

Chao, J. Y., Liu, C. H. & Yao, L. Y., 2017 二月 2, Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. Meen, T-H., Prior, S. D. & Lam, A. D. K-T. (編輯). Institute of Electrical and Electronics Engineers Inc., p. 65-67 3 p. 7840233. (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016).

研究成果: 書貢獻/報告類型會議貢獻

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., Chien, S. C. 及其他3, Loh, Y. T., Chang, Y. J. & Liou, F. T., 2002 一月 1, 於 : Annual Proceedings - Reliability Physics (Symposium). p. 268-271 4 p.

研究成果: 雜誌貢獻Conference article

2 引文 斯高帕斯(Scopus)

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., Chien, S. C. 及其他3, Loh, Y. T., Chang, Y. J. & Liou, F. T., 2002 一月 1, 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual. Institute of Electrical and Electronics Engineers Inc., p. 268-271 4 p. 996646. (IEEE International Reliability Physics Symposium Proceedings; 卷 2002-January).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Cheng, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Yeah, Y. H., Chen, T. J. & Cheng, O., 2017 七月 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T72-T73 7998204. (Digest of Technical Papers - Symposium on VLSI Technology).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Chen, M. J., Kang, T. K., Huang, H. T., Liu, C. H., Chang, Y. J. & Fu, K. Y., 2000 八月 1, 於 : IEEE Transactions on Electron Devices. 47, 8, p. 1682-1683 2 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)