• 633 引文
  • 14 h-指數
19972019

每年研究成果

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研究成果

2019

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 十二月, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December).

研究成果: 書貢獻/報告類型會議貢獻

Embedded PUF on 14nm HKMG FinFET Platform: A Novel 2-bit-per-cell OTP-based Memory Feasible for IoT Secuirty Solution in 5G Era

Hsieh, E. R., Wang, H. W., Liu, C. H., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2019 六月, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T118-T119 8776515. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2019-June).

研究成果: 書貢獻/報告類型會議貢獻

Integration of ARCS motivational model and it to enhance students learning in the context of atayal culture

Chao, J., Jiang, T. W., Yeh, Y. H., Liu, C. H. & Lin, C. M., 2019 一月 1, 於 : Eurasia Journal of Mathematics, Science and Technology Education. 15, 11, em1771.

研究成果: 雜誌貢獻文章

The guideline on designing a high performance nc mosfet by matching the gate capacitance and mobility enhancement

Luo, Y. C., Li, F. L., Hsieh, E. R., Liu, C. H., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Chenz, O., 2019 四月, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804688. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

研究成果: 書貢獻/報告類型會議貢獻

The understanding of gate capacitance matching on achieving a high performance NC MOSFET with sufficient mobility

Chiang, C. K., Husan, P., Lou, Y. C., Li, F. L., Hsieh, E. R., Liu, C. H. & Chung, S. S., 2019 六月, 2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc., 8782951. (2019 Silicon Nanoelectronics Workshop, SNW 2019).

研究成果: 書貢獻/報告類型會議貢獻

2018
開啟存取

A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications

Cheng, H. W., Hsieh, E. R., Huang, Z. H., Chuang, C. H., Chen, C. H., Li, F. L., Lo, Y. M., Liu, C. H. & Chung, S. S., 2018 七月 3, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

研究成果: 書貢獻/報告類型會議貢獻

Editorial: IEDMS 2016

Liu, C. H., Cheng, C. H., Cheng, C. P. & Liou, J. J., 2018 四月, 於 : Microelectronics Reliability. 83, 1 p.

研究成果: 雜誌貢獻社论

Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays

Lee, C. C., Liu, C. H., Li, D. Y. & Hsieh, C. P., 2018 四月 1, 於 : Microelectronics Reliability. 83, p. 230-234 5 p.

研究成果: 雜誌貢獻文章

Wide Bandgap Materials for Semiconductor Devices

Lee, K. W., Liu, C. H. & Misra, D., 2018 十二月 1, 於 : Microelectronics Reliability. 91, 1 p.

研究成果: 雜誌貢獻社论

2017

A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash with Excellent Immunity to Sneak Path

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Chen, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2017 十二月 1, 於 : IEEE Transactions on Electron Devices. 64, 12, p. 4910-4918 9 p., 8089812.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)
開啟存取
3 引文 斯高帕斯(Scopus)

A novel design of P-N staggered face-tunneling TFET targeting for low power and appropriate performance applications

Hsieh, E. R., Fan, Y. C., Chang, K. Y., Liu, C. H., Chien, C. H. & Chung, S. S., 2017 六月 7, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 7942487. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

研究成果: 書貢獻/報告類型會議貢獻

Exploring the spatial concepts and abilities of indigenous Atayal elementary school students in Taiwan

Chao, J. Y., Liu, C. H. & Yao, L. Y., 2017 二月 2, Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. Meen, T-H., Prior, S. D. & Lam, A. D. K-T. (編輯). Institute of Electrical and Electronics Engineers Inc., p. 65-67 3 p. 7840233. (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016).

研究成果: 書貢獻/報告類型會議貢獻

First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Cheng, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Yeah, Y. H., Chen, T. J. & Cheng, O., 2017 七月 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T72-T73 7998204. (Digest of Technical Papers - Symposium on VLSI Technology).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs

Hsieh, E. R., Fan, Y. C., Liu, C. H., Chung, S. S., Huang, R. M., Tsai, C. T. & Yew, T. R., 2017 六月 13, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 130-131 2 p. 7947549. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

Kinect augmented reality gear game design

Chen, J. Y., Liu, C. H., Hsieh, C. H., Huang, S. Y., Wang, W. K. & Nien, B. H., 2017 七月 21, Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. Meen, T-H., Lam, A. D. K-T. & Prior, S. D. (編輯). Institute of Electrical and Electronics Engineers Inc., p. 373-375 3 p. 7988429. (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)
2016
開啟存取
3 引文 斯高帕斯(Scopus)

Study on CPS spatial concept course and assessments for aboriginal children: With “rotation” and “mapping” as examples

Chao, J. Y., Yao, L. Y., Liu, C. H. & Chen, J. Y., 2016 一月 1, Applied System Innovation - Proceedings of the International Conference on Applied System Innovation, ICASI 2015. Lam, A. D. K-T., Prior, S. D. & Meen, T-H. (編輯). CRC Press/Balkema, p. 735-740 6 p. (Applied System Innovation - Proceedings of the International Conference on Applied System Innovation, ICASI 2015).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)
2015
3 引文 斯高帕斯(Scopus)

Design of complementary tilt-gate TFETs with SiGe/Si and III-V integrations feasible for ultra-low-power applications

Hsieh, E. R., Lin, Y. S., Zhao, Y. B., Liu, C. H., Chien, C. H. & Chung, S. S., 2015 九月 24, 2015 Silicon Nanoelectronics Workshop, SNW 2015. Institute of Electrical and Electronics Engineers Inc., 7275322. (2015 Silicon Nanoelectronics Workshop, SNW 2015).

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment

Wang, S. J., Wang, M. C., Chen, S. Y., Lan, W. H., Yang, B. W., Huang, L. S. & Liu, C. H., 2015 一月 1, 於 : Microelectronics Reliability. 55, 11, p. 2203-2207 5 p.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures

Wang, S. J., Wang, M. C., Lee, W. D., Chen, W. S., Huang, H. S., Chen, S. Y., Huang Ms, L. S. & Liu, C. H., 2015 一月 1, 於 : International Journal of Nanotechnology. 12, 1-2, p. 59-73 15 p.

研究成果: 雜誌貢獻文章

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

Lin, K. C., Juan, P. C., Liu, C. H., Wang, M. C. & Chou, C. H., 2015 一月 1, 於 : Microelectronics Reliability. 55, 11, p. 2198-2202 5 p.

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

Structural optimizations of silicon based NMOSFETs with a sunken STI pattern by using a robust stress simulation methodology

Lee, C. C., Liu, C-H., Cheng, H. C. & Deng, R. H., 2015 一月 1, 於 : Journal of Nanoscience and Nanotechnology. 15, 3, p. 2179-2184 6 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)
2014

Augmented Reality in design and implementation of interactive recycling game

Chen, J. Y., Liu, C. H. & Wang, W. K., 2014 三月 10, Environment, Energy and Sustainable Development - Proceedings of the 2013 International Conference on Frontier of Energy and Environment Engineering, ICFEEE 2013. p. 805-808 4 p. (Environment, Energy and Sustainable Development - Proceedings of the 2013 International Conference on Frontier of Energy and Environment Engineering, ICFEEE 2013; 卷 2).

研究成果: 書貢獻/報告類型會議貢獻

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Wang, M. C., Wang, S. J., Huang, H. S., Chen, S. Y., Peng, M. R., Ji, L. R., Lu, M. F., Liao, W. S. & Liu, C. H., 2014 一月 1, 於 : International Journal of Nanotechnology. 11, 1-4, p. 62-74 13 p.

研究成果: 雜誌貢獻文章

Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

Samanta, P., Huang, H. S., Chen, S. Y. & Liu, C. H., 2014 三月 13, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 7061072. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

研究成果: 書貢獻/報告類型會議貢獻

Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Lee, C. C., Liu, C. H., Hsu, H. W. & Hung, M. H., 2014 四月 30, 於 : Thin Solid Films. 557, p. 311-315 5 p.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Lin, K. C., Twu, M. J., Juan, P. C., Hsu, H. W., Huang, H. S., Wang, M. C. & Liu, C. H., 2014 一月 1, 於 : International Journal of Nanotechnology. 11, 1-4, p. 27-39 13 p.

研究成果: 雜誌貢獻文章

Interactive game design of axles upon augmented reality

Chao, J. Y., Chen, J. Y., Liu, C-H., Yang, C. K. & Lu, K. F., 2014 一月 1, p. 721-724. 4 p.

研究成果: 會議貢獻類型

Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern

Lee, C. C., Liu, C. H., Deng, R. H., Hsu, H. W. & Chiang, K. N., 2014 四月 30, 於 : Thin Solid Films. 557, p. 323-328 6 p.

研究成果: 雜誌貢獻文章

2 引文 斯高帕斯(Scopus)

Mechanical property effects of Si1 - XGex channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide- semiconductor field effect transistors

Lee, C. C., Cheng, H. C., Hsu, H. W., Chen, Z. H., Teng, H. H. & Liu, C. H., 2014 四月 30, 於 : Thin Solid Films. 557, p. 316-322 7 p.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

Physically based modeling for stress assessment in MOS devices

Lee, C. C., Lin, K. C., Lin, Y. H., Lai, Y. C. & Liu, C-H., 2014 三月 13, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 7061231

研究成果: 書貢獻/報告類型會議貢獻

Positive bias temperature instability in p -type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Samanta, P., Huang, H. S., Chen, S. Y., Liu, C. H. & Cheng, L. W., 2014 二月 21, 於 : Journal of Applied Physics. 115, 7, 074502.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers

Wang, M. C., Huang, H. S., Peng, M. R., Wang, S. J., Chen, T. Y., Liao, W. S., Yang, H. C. & Liu, C. H., 2014, 於 : International Journal of Materials and Product Technology. 49, 1, p. 25-40 16 p.

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

The analysis of channel stress induced by CESL in N-MOSFET

Twu, M-J., Kao, W-C., Lin, K. C., Chen, K. D., Kua, Y. T. & Liu, C-H., 2014 一月 16, Quantum, Nano, Micro Technologies and Applied Researches. p. 235-240 6 p. (Applied Mechanics and Materials; 卷 481).

研究成果: 書貢獻/報告類型會議貢獻

The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

Hsieh, E. R., Lu, P. Y., Chung, S. S., Chang, K. Y., Liu, C. H., Ke, J. C., Yang, C. W. & Tsai, C. T., 2014 九月 8, Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 6894389. (Digest of Technical Papers - Symposium on VLSI Technology).

研究成果: 書貢獻/報告類型會議貢獻

17 引文 斯高帕斯(Scopus)

The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO 2 high-k metal gate 28nm CMOS devices

Wu, P. C., Hsieh, E. R., Lu, P. Y., Chung, S. S., Chang, K. Y., Liu, C-H., Ke, J. C., Yang, C. W. & Tsai, C. T., 2014 一月 1, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 6839679. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)
2013

Body effect of SiGe and CESL strained nano-node NMOSFETs on (100) silicon substrate

Wang, M. C., Wu, G. W., Wang, S. J., Yang, H. C., Liao, W. S., Lu, M. F., Jhang, J. Z. & Liu, C. H., 2013 五月 27, p. 379-382. 4 p.

研究成果: 會議貢獻類型

1 引文 斯高帕斯(Scopus)

Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel

Hsu, H. W., Huang, H. S., Lee, C. C., Chen, S. Y., Teng, H. H., Peng, M. R., Wang, M. C. & Liu, C-H., 2013 十二月 1, 於 : Journal of Nanoscience and Nanotechnology. 13, 12, p. 8127-8132 6 p.

研究成果: 雜誌貢獻文章

6 引文 斯高帕斯(Scopus)

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Juan, P. C., Sun, C. L., Liu, C. H., Lin, C. L., Mong, F. C., Huang, J. H. & Chang, H. S., 2013 五月 1, 於 : Microelectronic Engineering. 109, p. 142-147 6 p.

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Wang, S. J., Peng, S. H., Hu, Y. M., Chen, S. Y., Huang, H. S., Wang, M. C., Yang, H. C. & Liu, C. H., 2013 五月 27, p. 309-312. 4 p.

研究成果: 會議貢獻類型

3 引文 斯高帕斯(Scopus)

High Quality of 0.18μm CMOS 5.2GHz cascode LNA for RFID tag applications

Yang, H. C., Peng, S. H., Wang, S. J., Wang, M. C., Lian, C. W., Yang, J. M., Chin, H. I. & Liu, C-H., 2013 五月 27, p. 313-316. 4 p.

研究成果: 會議貢獻類型

2 引文 斯高帕斯(Scopus)

Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Hsu, H. W., Huang, H. S., Chen, S. Y., Wang, M. C., Li, K. C., Lin, K. C. & Liu, C-H., 2013 三月 13, Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. p. 89-90 2 p. 6465962. (Proceedings - Winter Simulation Conference).

研究成果: 書貢獻/報告類型會議貢獻

Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths

Hsu, H. W., Lin, K. C., Lee, C. C., Twu, M-J., Huang, H. S., Chen, S. Y., Peng, M. R., Teng, H. H. & Liu, C-H., 2013 十月 1, 於 : Thin Solid Films. 544, p. 120-124 5 p.

研究成果: 雜誌貢獻文章

5 引文 斯高帕斯(Scopus)

Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Wang, M. C., Jhang, J. Z., Wang, S. J., Yang, H. C., Liao, W. S., Lu, M. F., Wu, G. W. & Liu, C. H., 2013 五月 27, ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013. p. 375-378 4 p. 6512371

研究成果: 書貢獻/報告類型會議貢獻