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劉 傳璽
機電工程學系
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liuch@ntnu.edu.tw
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Engineering & Materials Science
Gate dielectrics
Oxides
MOSFET devices
Hot carriers
Leakage currents
Metals
Oxide semiconductors
Nitridation
Negative bias temperature instability
Electric properties
Capacitors
Silicon
Threshold voltage
Electric potential
Degradation
Ferroelectric materials
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Students
Capacitance
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Lanthanum
Field effect transistors
RRAM
Diodes
Carrier mobility
Semiconductor materials
Surface roughness
Germanium
Transistors
Permittivity
Data storage equipment
X ray photoelectron spectroscopy
Sputtering
Augmented reality
Crystallization
MOS devices
Cerium oxide
Chemical Compounds
Gate dielectrics
Oxides
MOSFET devices
Metals
Silicon
Electric properties
Ferroelectric materials
Oxide semiconductors
Leakage currents
Capacitors
Hot carriers
Electric potential
Nitridation
Negative bias temperature instability
Annealing
Temperature
Capacitance
Plasmas
Etching
Physical properties
Electric breakdown
Silicates
Electrons
Atomic layer deposition
Degradation
Hafnium
Doping (additives)
Lanthanum
RRAM
Transistors
Data storage equipment
Organic light emitting diodes (OLED)
Electrostatic discharge
Interface states
Threshold voltage
Carrier mobility
Germanium
Lattice mismatch
Dielectric films
Semiconductor materials
Diodes
Substrates
Field effect transistors
Permittivity
Substitution reactions
Soldering alloys
Physics & Astronomy
metal oxide semiconductors
field effect transistors
capacitors
oxides
traps
n-type semiconductors
leakage
breakdown
silicon
electric potential
electrical properties
silicates
degradation
hafnium
performance
temperature
conduction
transistors
physical properties
atomic layer epitaxy
annealing
threshold voltage
metals
isolation
oxynitrides
insulators
etching
p-type semiconductors
lanthanum
shift
