跳至主導覽
跳至搜尋
跳過主要內容
國立臺灣師範大學 首頁
專家資料申請/更新
English
中文
首頁
個人檔案
研究單位
研究成果
研究計畫
新聞/媒體
資料集
學術活動
得獎記錄
學生論文
按專業知識、姓名或所屬機構搜尋
查看斯高帕斯 (Scopus) 概要
劉 傳璽
教授
機電工程學系
電話
(02)7749-3515
電子郵件
liuch
ntnu.edu
tw
h-index
h10-index
h5-index
796
引文
14
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
133
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
52
引文
4
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1997 …
2023
每年研究成果
概覽
指紋
網路
研究計畫
(3)
研究成果
(148)
類似的個人檔案
(6)
指紋
查看啟用 Chuan-Hsi Liu 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
INIS
oxides
100%
metals
71%
semiconductor materials
60%
dielectrics
60%
devices
59%
layers
58%
performance
49%
field effect transistors
44%
traps
34%
interfaces
33%
mosfet
32%
reliability
31%
voltage
29%
thickness
29%
breakdown
28%
comparative evaluations
23%
design
23%
silicon
23%
carriers
23%
surfaces
23%
capacitors
22%
applications
22%
power
21%
germanium silicides
21%
instability
21%
leakage current
19%
substrates
17%
transistors
17%
simulation
16%
mobility
15%
annealing
15%
nitridation
13%
electrical properties
13%
schools
13%
films
13%
plasma
13%
charges
13%
electrons
12%
ferroelectric materials
12%
strains
11%
learning
11%
holes
11%
etching
11%
control
11%
length
10%
thin films
10%
density
10%
tunneling
10%
units
10%
width
9%
Material Science
Dielectric Material
60%
Metal-Oxide-Semiconductor Field-Effect Transistor
60%
Devices
56%
Oxide
50%
Temperature
47%
Electrical Property
27%
Capacitor
26%
Metal Oxide
25%
Oxide Semiconductor
25%
Silicon
19%
Hot Carrier
18%
Metal
17%
Type Metal
16%
Density
16%
Transistor
14%
Nitriding
14%
Negative-Bias Temperature Instability
14%
Annealing
13%
Surface
13%
Silicate
12%
Ferroelectric Material
12%
Characterization
11%
Strain
11%
Physical Property
10%
Electrical Breakdown
9%
Film
9%
Permittivity
8%
Capacitance
8%
Material
8%
Hafnium
7%
Thin Films
7%
Lanthanum
7%
Zirconia
7%
Electronic Circuit
7%
Crystallization
5%
X-Ray Diffraction
5%
Surface Plasmon
5%
Carrier Mobility
5%
Diode
5%
Percolation
5%
Surface Roughness
5%
Cerium Oxide
5%
Oxynitride
5%
Crystalline Material
5%
Nitride Compound
5%
Germanium
5%
Physics
Oxide
36%
Field Effect Transistor
35%
Temperature
28%
Dielectrics
23%
Performance
22%
Model
17%
Metal Oxide Semiconductor
17%
Electrons
16%
Silicon
15%
Electric Potential
14%
Simulation
10%
Ferroelectricity
9%
Metal
9%
Memory
9%
Etching
9%
Region
9%
Capacitor
8%
Behavior
8%
Emission
7%
Zirconium
7%
Substrates
7%
Controllers
7%
Temperature Dependence
6%
Thin Films
6%
Capacitance
5%
Quantum Dot
5%
Isolation
5%
Diode
5%
Percolation
5%
Lead
5%
Threshold Voltage
5%
Variations
5%
