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查看斯高帕斯 (Scopus) 概要
沈 青嵩
之前聯繫機構
物理學系
h-index
940
引文
16
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1986
2011
每年研究成果
概覽
指紋
網路
研究成果
(68)
類似的個人檔案
(6)
指紋
查看啟用 Ching-Song Shern 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
INIS
activation energy
10%
alloys
72%
anisotropy
23%
annealing
65%
atoms
20%
auger electron spectroscopy
34%
buffers
19%
cobalt
12%
coercive force
12%
crystals
29%
curie temperature
10%
depth
6%
dielectrics
24%
diffusion
8%
electrical conductivity
13%
epitaxy
6%
films
60%
frequency dependence
10%
growth
34%
high temperature
24%
hydrogen
9%
impedance
11%
increasing
6%
interfaces
22%
investigations
6%
ionic conductivity
18%
ions
6%
kerr effect
21%
layers
55%
low energy electron diffraction
39%
magnetic properties
47%
magnetization
27%
peaks
8%
phase transformations
29%
photoelectron spectroscopy
12%
protons
9%
relaxation
15%
signals
7%
single crystals
26%
spectra
6%
spin
15%
sulfates
14%
surfaces
71%
temperature dependence
9%
temperature range
14%
temperature range 0273-0400 k
13%
thickness
15%
thin films
74%
ultraviolet radiation
11%
values
10%
Material Science
Alloy
78%
Alloying
6%
Anisotropy
26%
Annealing
44%
Auger Electron Spectroscopy
44%
Buffer Layer
16%
Cobalt
7%
Conductivity
8%
Crystal
19%
Curie Temperature
13%
Dielectric Material
24%
Diffraction Pattern
5%
Electrical Conductivity
7%
Epitaxy
7%
Film
14%
Ionic Conductivity
18%
Low-Energy Electron Diffraction
43%
Magnetic Property
52%
Monolayers
23%
Single Crystal
22%
Surface
78%
Surface Structure
9%
Temperature
100%
Thin Films
15%
Ultra Violet Photoemission Spectroscopy
13%
Ultrathin Films
66%
Chemistry
Alloy
50%
Alloying
6%
Ambient Reaction Temperature
9%
Annealing
23%
Atomic Emission Spectroscopy
6%
Auger Electron Spectroscopy
23%
Buffer Solution
13%
Coercivity
6%
Desorption
6%
Dielectric Material
12%
Dielectric Relaxation
13%
Electrooptical Effect
6%
Ionic Conductivity
15%
Liquid Film
42%
Low Energy Electron Diffraction
36%
Magnetic Anisotropy
6%
Magnetic Property
24%
Magnetization
15%
Monolayer
14%
Proton
5%
Reaction Activation Energy
5%
Reaction Temperature
68%
Relaxation
6%
Single Crystalline Solid
20%
Spectra
9%
Spin Reorientation Transition
12%
Structural Phase Transition
16%
Structure
11%
Surface
51%
Thickness
10%
Ultra-Violet Photoelectron Spectroscopy
14%
Ultrathin Film
46%
