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查看斯高帕斯 (Scopus) 概要
程 金保
教授兼微奈米元件檢測研究中心主任
機電工程學系
https://orcid.org/0000-0002-5026-2725
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(02)7749-3521
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ntnu.edu
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h-index
h10-index
h5-index
685
引文
9
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
167
引文
7
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2
引文
1
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1997
2022
每年研究成果
概覽
指紋
網路
研究計畫
(5)
研究成果
(45)
資料集
(3)
類似的個人檔案
(6)
如果您對這些純文本內容做了任何改變，很快就會看到。
指紋
查看啟用 Chin-Pao Cheng 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Thin films
100%
Gate dielectrics
91%
Electrochromic devices
67%
Doping (additives)
65%
Nodular iron
65%
Temperature
62%
Metals
61%
Tungsten
60%
Annealing
59%
Optical properties
57%
Graphite
56%
Oxides
51%
Substrates
47%
Oxide semiconductors
45%
Capacitors
43%
Electric breakdown
43%
Optical recording
42%
Electric properties
39%
Friction stir welding
39%
Zinc oxide
38%
Sol-gels
37%
Oxide films
37%
Organic solvents
36%
Silicon
36%
Organic light emitting diodes (OLED)
33%
Structural properties
33%
Atoms
33%
Refractive index
33%
Nanowires
31%
Thermal fatigue
31%
Low carbon steel
29%
Microstructure
29%
Display devices
29%
Photoluminescence
29%
X ray diffraction
28%
Cast iron
27%
Magnesium
27%
Crystallization
25%
Plasmas
23%
Silicates
22%
X ray photoelectron spectroscopy
21%
Ferrite
20%
Electrodeposition
20%
Electric potential
20%
Heating
20%
Molecular beam epitaxy
19%
Hot Temperature
19%
Ohmic contacts
19%
Ruthenium
19%
Diffusion barriers
18%
Physics & Astronomy
iron
45%
thermal fatigue
37%
capacitors
33%
low carbon steels
32%
ruthenium
31%
display devices
28%
annealing
28%
zinc oxides
27%
thin films
26%
graphite
26%
metal oxide semiconductors
26%
magnesium
24%
lasing
23%
metals
23%
casts
22%
gels
22%
radio frequencies
22%
tungsten oxides
21%
ligands
21%
friction stir welding
20%
optical properties
19%
silicon
18%
temperature
18%
welding
18%
heating
18%
breakdown
17%
microstructure
17%
cycles
16%
volatile organic compounds
16%
transmittance
16%
electrical properties
15%
butanes
15%
tensile deformation
15%
adhesion
15%
nitriding
15%
structural stability
14%
tantalum nitrides
14%
vinylidene
14%
transistors
13%
room temperature
13%
high electron mobility transistors
13%
reactivity
12%
photoluminescence
12%
insertion
12%
metal oxides
12%
light emitting diodes
12%
electric potential
12%
ferrites
11%
luminance
11%
oxide films
11%
Chemical Compounds
Capacitor
52%
Thermal Fatigue
43%
Graphite
37%
Tungsten Oxide
36%
Optical Property
34%
Dielectric Material
33%
Microstructure
33%
Liquid Film
30%
Annealing
28%
Refractive Index
27%
Transmittance
26%
Time
24%
Electrical Property
21%
Magnesium Atom
21%
Voltage
21%
Tensile Strength
19%
Plate Like Crystal
19%
Molecular Beam Epitaxy
18%
Thermal Cracking
17%
Absorption Coefficient
17%
Ambient Reaction Temperature
16%
White
16%
Diffusion Barrier
16%
Metal Welding
16%
Zinc Oxide
15%
Quartz
15%
Retinal
14%
Compound Mobility
14%
Thermoelectricity
14%
Aluminium Alloy
14%
Metal
13%
Electroluminescence
13%
Butadiene
13%
Electrochemical Reaction
13%
Acrylonitrile
12%
Composite Material
12%
Field Effect
12%
Electron Transport
12%
Energy
12%
Nitrile
11%
Electron Particle
11%
Tungsten
11%
Retention Time
11%
Azide
11%
Polycrystalline Solid
11%
Current Density
11%
Ligand
11%
Nanowire
11%
Energy Transfer
10%
Crack Propagation
10%
