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查看斯高帕斯 (Scopus) 概要
盧 志權
副教授
物理學系
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(02)7749-6089
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cklo
ntnu.edu
tw
h-index
289
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1996
2014
每年研究成果
概覽
指紋
網路
研究成果
(60)
類似的個人檔案
(3)
指紋
查看啟用 Chi-Kuen Lo 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
INIS
anisotropy
50%
annealing
23%
barriers
11%
buffers
29%
capacitance
8%
cobalt
8%
crystal defects
8%
electron beams
27%
epitaxy
43%
equivalent circuits
9%
evaporation
16%
fcc lattices
19%
films
70%
growth
8%
hysteresis
20%
impedance
35%
junctions
28%
kerr effect
13%
layers
100%
magnesium oxides
39%
magnetic fields
8%
magnetic properties
18%
magnetic tunnel junctions
7%
magnetization
38%
magnetoresistance
33%
metals
14%
mhz range
17%
molybdenum 100
8%
nanostructures
12%
nickel oxides
10%
orientation
8%
osmium
12%
peaks
8%
permalloy
45%
randomness
10%
shape
15%
spin
46%
stability
9%
substrates
13%
surfaces
14%
symmetry
7%
temperature range 0273-0400 k
26%
thickness
31%
thin films
7%
topography
8%
transistors
38%
tunneling
10%
valves
32%
voltage
8%
x-ray diffraction
8%
Physics
Anisotropic Magnetoresistance
6%
Anisotropy
32%
Annealing
7%
Behavior
12%
Cobalt
8%
Coercivity
15%
Diffraction
9%
Domain Wall
6%
Eddy
6%
Electrical Resistivity
7%
Electron Scattering
6%
Evaporation
29%
Exchange Bias
12%
Exponents
6%
Ferromagnetic Resonance
12%
Frequencies
9%
High Resolution
9%
Hysteresis
11%
Impedance
14%
Ion
6%
Kerr Effect
16%
Magnetic Anisotropy
8%
Magnetic Properties
17%
Magnetization
27%
Meander
6%
Memory
7%
Molecular Beam Epitaxy
7%
Networks
6%
Nickel
6%
Numerical Analysis
6%
Oxide
9%
Oxygen
6%
Photoelectric Emission
6%
Plane
14%
Ratios
26%
Room Temperature
37%
Roughness
6%
Silicon
12%
Spectrometer
14%
Spin
21%
Spin Valve
21%
Statics
6%
Substrates
10%
Surface Properties
10%
Surface Roughness
6%
Temperature
11%
Transistor
19%
Transport Properties
6%
Wafer
8%
X Ray Spectroscopy
6%
Material Science
Anisotropy
48%
Buffer Layer
11%
Capacitance
11%
Characterization
8%
Cobalt
6%
Devices
8%
Domain Wall
12%
Durability
9%
Electrical Resistivity
6%
Electrodeposition
6%
Electronic Circuit
12%
Epitaxial Layer
12%
Film
21%
Film Thickness
5%
Giant Magnetoresistance
18%
Glass
9%
Lattice Mismatch
6%
Lithography
6%
Magnesium Oxide
37%
Magnetoresistance
17%
Magnetron Sputtering
7%
Material
6%
Metal
8%
Molecular Beam Epitaxy
7%
Nickel
12%
Osmium
6%
Oxide
19%
Oxide Film
6%
Permalloy
25%
Saturation
7%
Secondary Ion Mass Spectrometry
6%
Silicon
12%
Sputtered Film
6%
Surface Topography
6%
Temperature
53%
Thermal Stability
9%
Transistor
38%
ZnO
6%
