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查看斯高帕斯 (Scopus) 概要
盧 志權
副教授
物理學系
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(02)7749-6089
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cklo
ntnu.edu
tw
h-index
286
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1995
2014
每年研究成果
概覽
指紋
網路
研究成果
(61)
類似的個人檔案
(6)
指紋
查看啟用 Chi-Kuen Lo 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
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INIS
layers
100%
films
75%
anisotropy
55%
epitaxy
48%
spin
45%
permalloy
44%
magnesium oxides
42%
magnetization
40%
transistors
38%
impedance
34%
thickness
32%
magnetoresistance
32%
valves
31%
buffers
29%
junctions
28%
electron beams
26%
temperature range 0273-0400 k
26%
fcc lattices
25%
annealing
23%
hysteresis
19%
magnetic properties
18%
mhz range
17%
evaporation
15%
shape
15%
metals
14%
kerr effect
14%
surfaces
14%
substrates
13%
nanostructures
12%
osmium
12%
hcp lattices
12%
barriers
11%
nickel oxides
10%
randomness
10%
tunneling
10%
stability
9%
equivalent circuits
9%
magnetic fields
8%
capacitance
8%
voltage
8%
orientation
8%
symmetry
8%
molybdenum 100
7%
growth
7%
cobalt
7%
topography
7%
x-ray diffraction
7%
peaks
7%
crystal defects
7%
magnetic tunnel junctions
7%
Physics
Room Temperature
36%
Anisotropy
31%
Evaporation
28%
Magnetization
27%
Ratios
26%
Spin
21%
Spin Valve
21%
Transistor
19%
Magnetic Properties
17%
Kerr Effect
15%
Coercivity
15%
Plane
14%
Impedance
13%
Spectrometer
13%
Behavior
12%
Silicon
12%
Ferromagnetic Resonance
12%
Exchange Bias
12%
Temperature
11%
Hysteresis
11%
Surface Properties
10%
Substrates
9%
High Resolution
9%
Oxide
9%
Diffraction
9%
Frequencies
9%
Magnetic Anisotropy
8%
Cobalt
8%
Wafer
7%
Memory
7%
Annealing
7%
Molecular Beam Epitaxy
7%
Electrical Resistivity
7%
Oxygen
6%
Exponents
6%
Nickel
6%
Eddy
6%
Statics
6%
Meander
6%
Anisotropic Magnetoresistance
6%
Transport Properties
6%
Numerical Analysis
6%
X Ray Spectroscopy
6%
Ion
6%
Photoelectric Emission
6%
Roughness
6%
Networks
6%
Surface Roughness
6%
Domain Wall
6%
Electron Scattering
6%
Material Science
Anisotropy
53%
Temperature
52%
Magnesium Oxide
43%
Transistor
38%
Permalloy
25%
Film
21%
Oxide
19%
Giant Magnetoresistance
18%
Magnetoresistance
17%
Epitaxial Layer
12%
Domain Wall
12%
Nickel
12%
Silicon
12%
Electronic Circuit
11%
Buffer Layer
11%
Capacitance
10%
Glass
9%
Durability
9%
Thermal Stability
9%
Molecular Beam Epitaxy
9%
Characterization
8%
Devices
8%
Metal
7%
Saturation
7%
Magnetron Sputtering
7%
Material
6%
Electrical Resistivity
6%
Oxide Film
6%
Surface Topography
6%
Secondary Ion Mass Spectrometry
6%
Electrodeposition
6%
ZnO
6%
Sputtered Film
6%
Cobalt
6%
Lattice Mismatch
6%
Osmium
6%
Lithography
6%
Film Thickness
5%
