Zero-bias anomalies in narrow tunnel junctions in the quantum Hall regime

P. Jiang, C. C. Chien, I. Yang, W. Kang, K. W. Baldwin, L. N. Pfeiffer, K. W. West

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Abstract

We report on the study of cleaved-edge-overgrown line junctions with a serendipitously created narrow opening in an otherwise thin, precise line barrier. Two sets of zero-bias anomalies are observed with an enhanced conductance for filling factors ν>1 and a strongly suppressed conductance for ν<1. A transition between the two behaviors is found near ν≈1. The zero-bias anomaly (ZBA) line shapes find explanation in Luttinger liquid models of tunneling between quantum Hall edge states. The ZBA for ν<1 occurs from strong backscattering induced by suppression of quasiparticle tunneling between the edge channels for the n=0 Landau levels. The ZBA for ν>1 arises from weak tunneling of quasiparticles between the n=1 edge channels.

Original languageEnglish
Article number246801
JournalPhysical Review Letters
Volume105
Issue number24
DOIs
Publication statusPublished - 2010 Dec 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Jiang, P., Chien, C. C., Yang, I., Kang, W., Baldwin, K. W., Pfeiffer, L. N., & West, K. W. (2010). Zero-bias anomalies in narrow tunnel junctions in the quantum Hall regime. Physical Review Letters, 105(24), [246801]. https://doi.org/10.1103/PhysRevLett.105.246801