WO3 Thin Films Prepared by DC Sputtering and Annealed for Terahertz Metamaterial Device Design

Rui Zhe Hou; Po Yun Hsiao; Chin Pao Cheng; Chan Shan Yang

doi:10.1117/12.3042066

WO₃ Thin Films Prepared by DC Sputtering and Annealed for Terahertz Metamaterial Device Design

Rui Zhe Hou
, Po Yun Hsiao
, Chin Pao Cheng^*
, Chan Shan Yang^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Tungsten trioxide (WO₃₎ is an indirect bandgap semiconductor (Eg ≈ 2.5-2.8 eV) [1] with excellent chemical stability, making it highly suitable for optoelectronic devices. In this study, WO₃ thin films were prepared on high-resistance silicon substrates using DC sputtering. The optical properties of the films were measured using THz-TDS under as-deposited conditions and after furnace annealing. Simulations were used to design metamaterials for applications in the terahertz frequency range. Additionally, The feasibility of laser annealing was assessed, and the properties of the films after furnace and laser annealing were analyzed.

Original language	English
Title of host publication	Oxide-based Materials and Devices XVI
Editors	David J. Rogers, Ferechteh H. Teherani
Publisher	SPIE
ISBN (Electronic)	9781510684829
DOIs	https://doi.org/10.1117/12.3042066
Publication status	Published - 2025
Event	Oxide-based Materials and Devices XVI 2025 - San Francisco, United States Duration: 2025 Jan 26 → 2025 Jan 29

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	13367
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-based Materials and Devices XVI 2025
Country/Territory	United States
City	San Francisco
Period	2025/01/26 → 2025/01/29

Keywords

D.C. Magnetron Sputtering
Surface plasmon resonance
WO3
metamaterial structure
terahertz

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.3042066

Cite this

Hou, R. Z., Hsiao, P. Y., Cheng, C. P., & Yang, C. S. (2025). WO₃ Thin Films Prepared by DC Sputtering and Annealed for Terahertz Metamaterial Device Design. In D. J. Rogers, & F. H. Teherani (Eds.), Oxide-based Materials and Devices XVI Article 133670L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 13367). SPIE. https://doi.org/10.1117/12.3042066

WO₃ Thin Films Prepared by DC Sputtering and Annealed for Terahertz Metamaterial Device Design. / Hou, Rui Zhe; Hsiao, Po Yun; Cheng, Chin Pao et al.
Oxide-based Materials and Devices XVI. ed. / David J. Rogers; Ferechteh H. Teherani. SPIE, 2025. 133670L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 13367).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hou, RZ, Hsiao, PY, Cheng, CP & Yang, CS 2025, WO₃ Thin Films Prepared by DC Sputtering and Annealed for Terahertz Metamaterial Device Design. in DJ Rogers & FH Teherani (eds), Oxide-based Materials and Devices XVI., 133670L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 13367, SPIE, Oxide-based Materials and Devices XVI 2025, San Francisco, United States, 2025/01/26. https://doi.org/10.1117/12.3042066

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abstract = "Tungsten trioxide (WO3) is an indirect bandgap semiconductor (Eg ≈ 2.5-2.8 eV) [1] with excellent chemical stability, making it highly suitable for optoelectronic devices. In this study, WO3 thin films were prepared on high-resistance silicon substrates using DC sputtering. The optical properties of the films were measured using THz-TDS under as-deposited conditions and after furnace annealing. Simulations were used to design metamaterials for applications in the terahertz frequency range. Additionally, The feasibility of laser annealing was assessed, and the properties of the films after furnace and laser annealing were analyzed.",

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