@article{619fe064abe041a982d2cce585f39034,
title = "Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors",
abstract = "We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.",
keywords = "IGZO, Quantum interference, TFT, spintronics, weak antilocalization, weak localization",
author = "Wang, {Wei Hsiang} and Elica Heredia and Lyu, {Syue Ru} and Liu, {Shu Hao} and Liao, {Po Yung} and Chang, {Ting Chang} and Jiang, {Pei Hsun}",
note = "Funding Information: Manuscript received December 11, 2017; revised December 19, 2017; accepted December 20, 2017. Date of publication December 22, 2017; date of current version January 25, 2018. This work was supported by the Ministry of Science and Technology of the Republic of China under Grant MOST 102-2112-M-003-009-MY3. The review of this letter was arranged by Editor S. Hall. (Corresponding author: Pei-hsun Jiang.) W.-H. Wang, E. Heredia, S.-R. Lyu, S.-H. Liu, and P.-h. Jiang are with the Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (e-mail: pjiang@ntnu.edu.tw). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2018",
month = feb,
doi = "10.1109/LED.2017.2786547",
language = "English",
volume = "39",
pages = "212--215",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}