Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wei Hsiang Wang; Elica Heredia; Syue Ru Lyu; Shu Hao Liu; Po Yung Liao; Ting Chang Chang; Pei Hsun Jiang

doi:10.1109/LED.2017.2786547

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wei Hsiang Wang, Elica Heredia, Syue Ru Lyu, Shu Hao Liu, Po Yung Liao, Ting Chang Chang, Pei Hsun Jiang^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

Original language	English
Article number	8234569
Pages (from-to)	212-215
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	2
DOIs	https://doi.org/10.1109/LED.2017.2786547
Publication status	Published - 2018 Feb

Keywords

IGZO
Quantum interference
TFT
spintronics
weak antilocalization
weak localization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2017.2786547

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title = "Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors",

abstract = "We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.",

keywords = "IGZO, Quantum interference, TFT, spintronics, weak antilocalization, weak localization",

author = "Wang, {Wei Hsiang} and Elica Heredia and Lyu, {Syue Ru} and Liu, {Shu Hao} and Liao, {Po Yung} and Chang, {Ting Chang} and Jiang, {Pei Hsun}",

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AU - Wang, Wei Hsiang

AU - Heredia, Elica

AU - Lyu, Syue Ru

AU - Liu, Shu Hao

AU - Liao, Po Yung

AU - Chang, Ting Chang

AU - Jiang, Pei Hsun

PY - 2018/2

Y1 - 2018/2

N2 - We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

AB - We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

KW - IGZO

KW - Quantum interference

KW - TFT

KW - spintronics

KW - weak antilocalization

KW - weak localization

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ER -

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Abstract

Keywords

ASJC Scopus subject areas

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