We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.
- Quantum interference
- weak antilocalization
- weak localization
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering