Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wei Hsiang Wang, Elica Heredia, Syue Ru Lyu, Shu Hao Liu, Po Yung Liao, Ting Chang Chang, Pei Hsun Jiang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

Original languageEnglish
Article number8234569
Pages (from-to)212-215
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number2
DOIs
Publication statusPublished - 2018 Feb

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Amorphous films
Thin film transistors
Electric potential

Keywords

  • IGZO
  • Quantum interference
  • TFT
  • spintronics
  • weak antilocalization
  • weak localization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors. / Wang, Wei Hsiang; Heredia, Elica; Lyu, Syue Ru; Liu, Shu Hao; Liao, Po Yung; Chang, Ting Chang; Jiang, Pei Hsun.

In: IEEE Electron Device Letters, Vol. 39, No. 2, 8234569, 02.2018, p. 212-215.

Research output: Contribution to journalArticle

Wang, Wei Hsiang ; Heredia, Elica ; Lyu, Syue Ru ; Liu, Shu Hao ; Liao, Po Yung ; Chang, Ting Chang ; Jiang, Pei Hsun. / Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors. In: IEEE Electron Device Letters. 2018 ; Vol. 39, No. 2. pp. 212-215.
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