TY - GEN
T1 - Voltage-induced reversible and irreversible changes in the magnetic coercivity of Fe, Co/ZnO heterostructures
AU - Chang, P.
AU - Hsu, C.
AU - Lin, W.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - The metal/oxide hetero-structure has attracted much attention in recent decades because of its potential in various applications such as heterogeneous catalysis. In particular, the combination of magnetic metal with an oxide thin film, e.g., the magneto-tunneling junction, has been widely studied and applied in data storage and spintronics. ZnO is one of the important semiconducting materials, not only for photoluminescence but also more importantly for its promising applications in spintronics. Transition metal-doped ZnO is predicted to be useful as a magnetic semiconductor for room-temperature (RT) application. Furthermore, ZnO exhibits the largest electromechanical response, among the known tetrahedral semiconductors, which makes it suitable for devices in microelectromechanical and communication systems.
AB - The metal/oxide hetero-structure has attracted much attention in recent decades because of its potential in various applications such as heterogeneous catalysis. In particular, the combination of magnetic metal with an oxide thin film, e.g., the magneto-tunneling junction, has been widely studied and applied in data storage and spintronics. ZnO is one of the important semiconducting materials, not only for photoluminescence but also more importantly for its promising applications in spintronics. Transition metal-doped ZnO is predicted to be useful as a magnetic semiconductor for room-temperature (RT) application. Furthermore, ZnO exhibits the largest electromechanical response, among the known tetrahedral semiconductors, which makes it suitable for devices in microelectromechanical and communication systems.
UR - http://www.scopus.com/inward/record.url?scp=84942447011&partnerID=8YFLogxK
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U2 - 10.1109/INTMAG.2015.7157165
DO - 10.1109/INTMAG.2015.7157165
M3 - Conference contribution
AN - SCOPUS:84942447011
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -