Voltage-induced reversible and irreversible changes in the magnetic coercivity of Fe, Co/ZnO heterostructures

P. Chang, C. Hsu, W. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The metal/oxide hetero-structure has attracted much attention in recent decades because of its potential in various applications such as heterogeneous catalysis. In particular, the combination of magnetic metal with an oxide thin film, e.g., the magneto-tunneling junction, has been widely studied and applied in data storage and spintronics. ZnO is one of the important semiconducting materials, not only for photoluminescence but also more importantly for its promising applications in spintronics. Transition metal-doped ZnO is predicted to be useful as a magnetic semiconductor for room-temperature (RT) application. Furthermore, ZnO exhibits the largest electromechanical response, among the known tetrahedral semiconductors, which makes it suitable for devices in microelectromechanical and communication systems.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - 2015 Jul 14
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: 2015 May 112015 May 15

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period15/5/1115/5/15

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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