Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device

Shu Jui Chang, Po Chun Chang, Wen Chin Lin, Shao Hua Lo, Liang Chun Chang, Shang Fan Lee, Yuan Chieh Tseng

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Using x-ray magnetic spectroscopy with in-situ electrical characterizations, we investigated the effects of external voltage on the spin-electronic and transport properties at the interface of a Fe/ZnO device. Layer-, element-, and spin-resolved information of the device was obtained by cross-tuning of the x-ray mode and photon energy, when voltage was applied. At the early stage of the operation, the device exhibited a low-resistance state featuring robust Fe-O bonds. However, the Fe-O bonds were broken with increasing voltage. Breaking of the Fe-O bonds caused the formation of oxygen vacancies and resulted in a high-resistance state. Such interface reconstruction was coupled to a charge-transfer effect via Fe-O hybridization, which suppressed/enhanced the magnetization/coercivity of Fe electronically. Nevertheless, the interface became stabilized with the metallic phase if the device was continuously polarized. During this stage, the spin-polarization of Fe was enhanced whereas the coercivity was lowered by voltage, but changes of both characteristics were reversible. This stage is desirable for spintronic device applications, owing to a different voltage-induced electronic transition compared to the first stage. The study enabled a straightforward detection of the spin-electronic state at the ferromagnet-semiconductor interface in relation to the transport and reversal properties during operation process of the device.

Original languageEnglish
Article number339
JournalScientific Reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

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semiconductor devices
electric potential
coercivity
magnetic spectroscopy
transport properties
electronics
low resistance
high resistance
x ray spectroscopy
tuning
charge transfer
magnetization
photons
oxygen
polarization
x rays

ASJC Scopus subject areas

  • General

Cite this

Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device. / Chang, Shu Jui; Chang, Po Chun; Lin, Wen Chin; Lo, Shao Hua; Chang, Liang Chun; Lee, Shang Fan; Tseng, Yuan Chieh.

In: Scientific Reports, Vol. 7, No. 1, 339, 01.12.2017.

Research output: Contribution to journalArticle

Chang, Shu Jui ; Chang, Po Chun ; Lin, Wen Chin ; Lo, Shao Hua ; Chang, Liang Chun ; Lee, Shang Fan ; Tseng, Yuan Chieh. / Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device. In: Scientific Reports. 2017 ; Vol. 7, No. 1.
@article{3b2e0c59423a421dbbb70dfc4f950208,
title = "Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device",
abstract = "Using x-ray magnetic spectroscopy with in-situ electrical characterizations, we investigated the effects of external voltage on the spin-electronic and transport properties at the interface of a Fe/ZnO device. Layer-, element-, and spin-resolved information of the device was obtained by cross-tuning of the x-ray mode and photon energy, when voltage was applied. At the early stage of the operation, the device exhibited a low-resistance state featuring robust Fe-O bonds. However, the Fe-O bonds were broken with increasing voltage. Breaking of the Fe-O bonds caused the formation of oxygen vacancies and resulted in a high-resistance state. Such interface reconstruction was coupled to a charge-transfer effect via Fe-O hybridization, which suppressed/enhanced the magnetization/coercivity of Fe electronically. Nevertheless, the interface became stabilized with the metallic phase if the device was continuously polarized. During this stage, the spin-polarization of Fe was enhanced whereas the coercivity was lowered by voltage, but changes of both characteristics were reversible. This stage is desirable for spintronic device applications, owing to a different voltage-induced electronic transition compared to the first stage. The study enabled a straightforward detection of the spin-electronic state at the ferromagnet-semiconductor interface in relation to the transport and reversal properties during operation process of the device.",
author = "Chang, {Shu Jui} and Chang, {Po Chun} and Lin, {Wen Chin} and Lo, {Shao Hua} and Chang, {Liang Chun} and Lee, {Shang Fan} and Tseng, {Yuan Chieh}",
year = "2017",
month = "12",
day = "1",
doi = "10.1038/s41598-017-00547-4",
language = "English",
volume = "7",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

TY - JOUR

T1 - Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device

AU - Chang, Shu Jui

AU - Chang, Po Chun

AU - Lin, Wen Chin

AU - Lo, Shao Hua

AU - Chang, Liang Chun

AU - Lee, Shang Fan

AU - Tseng, Yuan Chieh

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Using x-ray magnetic spectroscopy with in-situ electrical characterizations, we investigated the effects of external voltage on the spin-electronic and transport properties at the interface of a Fe/ZnO device. Layer-, element-, and spin-resolved information of the device was obtained by cross-tuning of the x-ray mode and photon energy, when voltage was applied. At the early stage of the operation, the device exhibited a low-resistance state featuring robust Fe-O bonds. However, the Fe-O bonds were broken with increasing voltage. Breaking of the Fe-O bonds caused the formation of oxygen vacancies and resulted in a high-resistance state. Such interface reconstruction was coupled to a charge-transfer effect via Fe-O hybridization, which suppressed/enhanced the magnetization/coercivity of Fe electronically. Nevertheless, the interface became stabilized with the metallic phase if the device was continuously polarized. During this stage, the spin-polarization of Fe was enhanced whereas the coercivity was lowered by voltage, but changes of both characteristics were reversible. This stage is desirable for spintronic device applications, owing to a different voltage-induced electronic transition compared to the first stage. The study enabled a straightforward detection of the spin-electronic state at the ferromagnet-semiconductor interface in relation to the transport and reversal properties during operation process of the device.

AB - Using x-ray magnetic spectroscopy with in-situ electrical characterizations, we investigated the effects of external voltage on the spin-electronic and transport properties at the interface of a Fe/ZnO device. Layer-, element-, and spin-resolved information of the device was obtained by cross-tuning of the x-ray mode and photon energy, when voltage was applied. At the early stage of the operation, the device exhibited a low-resistance state featuring robust Fe-O bonds. However, the Fe-O bonds were broken with increasing voltage. Breaking of the Fe-O bonds caused the formation of oxygen vacancies and resulted in a high-resistance state. Such interface reconstruction was coupled to a charge-transfer effect via Fe-O hybridization, which suppressed/enhanced the magnetization/coercivity of Fe electronically. Nevertheless, the interface became stabilized with the metallic phase if the device was continuously polarized. During this stage, the spin-polarization of Fe was enhanced whereas the coercivity was lowered by voltage, but changes of both characteristics were reversible. This stage is desirable for spintronic device applications, owing to a different voltage-induced electronic transition compared to the first stage. The study enabled a straightforward detection of the spin-electronic state at the ferromagnet-semiconductor interface in relation to the transport and reversal properties during operation process of the device.

UR - http://www.scopus.com/inward/record.url?scp=85016761813&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016761813&partnerID=8YFLogxK

U2 - 10.1038/s41598-017-00547-4

DO - 10.1038/s41598-017-00547-4

M3 - Article

AN - SCOPUS:85016761813

VL - 7

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 339

ER -