Abstract
Transmittance of the device was as high as ∼75%. Phase shift exceeding φ/2 at 1.0 THz is achieved in a ∼500 μm-thick cell. The driving voltage required for the device operating as a quarter-wave plate was as low as 17.68 V (rms), an improvement of nearly an order of magnitude over previous work.
| Original language | English |
|---|---|
| Pages (from-to) | 2511-2513 |
| Number of pages | 3 |
| Journal | Optics Letters |
| Volume | 39 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2014 Apr 15 |
| Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics