Transmittance of the device was as high as ∼75%. Phase shift exceeding φ/2 at 1.0 THz is achieved in a ∼500 μm-thick cell. The driving voltage required for the device operating as a quarter-wave plate was as low as 17.68 V (rms), an improvement of nearly an order of magnitude over previous work.
|Number of pages||3|
|Publication status||Published - 2014 Apr 15|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics