Abstract
Transmittance of the device was as high as ∼75%. Phase shift exceeding φ/2 at 1.0 THz is achieved in a ∼500 μm-thick cell. The driving voltage required for the device operating as a quarter-wave plate was as low as 17.68 V (rms), an improvement of nearly an order of magnitude over previous work.
Original language | English |
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Pages (from-to) | 2511-2513 |
Number of pages | 3 |
Journal | Optics Letters |
Volume | 39 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2014 Apr 15 |
Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics