Vibrational signatures of isotopic impurities and complexes in II-VI compound semiconductors

Devki N. Talwar, Zhe Chuan Feng, Tzuen-Rong Yang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In II-VI compound semiconductors, we have used a comprehensive Green's function theory to study the vibrational properties of isotopic defects and to ascertain the microstructure of complex centers involving dopants and intrinsic impurities. The phonons generated by a realistic lattice-dynamical model for the host materials are integrated in simulating the Green's functions to help explicate the observed localized vibrational modes (LVMs) for various defect centers. Contrary to the distinct force constants required for isolated defects, the isotopic shift of LVMs has offered strong revelations for inflexible 'impurity-host' interactions in each isotopic defect. In compound semiconductors a unique force variation correlation with bond covalency is proposed providing corrections to the nearest-neighbor (NN) force constants for the closest mass isoelectronic and impurities carrying static charges. The articulation is extremely useful for defining perturbations and for analyzing the infrared absorption data on LVMs of complex defect centers. In corroboration with experiments, the Green's functions theory of impurity modes in Li-doped CdTe:Al (ZnSe:Al) has established second NN Li Cd(Zn)-Al Cd(Zn) pairs indicating the passivation of group-I acceptors via interaction with group-III elements as donors. The proposal of an antisite complex model Al Zn-Zn Se-Al Zn for the X center is consistent with the existing absorption results on impurity modes and is equally justified by theoretical considerations-making it the more likely identity for the native defect compensating neighboring Al Zn donors in ZnSe.

Original languageEnglish
Article number195203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number19
DOIs
Publication statusPublished - 2012 May 8

Fingerprint

signatures
Impurities
impurities
Defects
defects
Green's function
vibration mode
Green's functions
Infrared absorption
Beam plasma interactions
Phonons
Passivation
passivity
infrared absorption
II-VI semiconductors
proposals
phonons
Doping (additives)
interactions
Semiconductor materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Vibrational signatures of isotopic impurities and complexes in II-VI compound semiconductors. / Talwar, Devki N.; Feng, Zhe Chuan; Yang, Tzuen-Rong.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 85, No. 19, 195203, 08.05.2012.

Research output: Contribution to journalArticle

@article{e889acfc3a19457ba13e09ca6f0b2229,
title = "Vibrational signatures of isotopic impurities and complexes in II-VI compound semiconductors",
abstract = "In II-VI compound semiconductors, we have used a comprehensive Green's function theory to study the vibrational properties of isotopic defects and to ascertain the microstructure of complex centers involving dopants and intrinsic impurities. The phonons generated by a realistic lattice-dynamical model for the host materials are integrated in simulating the Green's functions to help explicate the observed localized vibrational modes (LVMs) for various defect centers. Contrary to the distinct force constants required for isolated defects, the isotopic shift of LVMs has offered strong revelations for inflexible 'impurity-host' interactions in each isotopic defect. In compound semiconductors a unique force variation correlation with bond covalency is proposed providing corrections to the nearest-neighbor (NN) force constants for the closest mass isoelectronic and impurities carrying static charges. The articulation is extremely useful for defining perturbations and for analyzing the infrared absorption data on LVMs of complex defect centers. In corroboration with experiments, the Green's functions theory of impurity modes in Li-doped CdTe:Al (ZnSe:Al) has established second NN Li Cd(Zn)-Al Cd(Zn) pairs indicating the passivation of group-I acceptors via interaction with group-III elements as donors. The proposal of an antisite complex model Al Zn-Zn Se-Al Zn for the X center is consistent with the existing absorption results on impurity modes and is equally justified by theoretical considerations-making it the more likely identity for the native defect compensating neighboring Al Zn donors in ZnSe.",
author = "Talwar, {Devki N.} and Feng, {Zhe Chuan} and Tzuen-Rong Yang",
year = "2012",
month = "5",
day = "8",
doi = "10.1103/PhysRevB.85.195203",
language = "English",
volume = "85",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "19",

}

TY - JOUR

T1 - Vibrational signatures of isotopic impurities and complexes in II-VI compound semiconductors

AU - Talwar, Devki N.

AU - Feng, Zhe Chuan

AU - Yang, Tzuen-Rong

PY - 2012/5/8

Y1 - 2012/5/8

N2 - In II-VI compound semiconductors, we have used a comprehensive Green's function theory to study the vibrational properties of isotopic defects and to ascertain the microstructure of complex centers involving dopants and intrinsic impurities. The phonons generated by a realistic lattice-dynamical model for the host materials are integrated in simulating the Green's functions to help explicate the observed localized vibrational modes (LVMs) for various defect centers. Contrary to the distinct force constants required for isolated defects, the isotopic shift of LVMs has offered strong revelations for inflexible 'impurity-host' interactions in each isotopic defect. In compound semiconductors a unique force variation correlation with bond covalency is proposed providing corrections to the nearest-neighbor (NN) force constants for the closest mass isoelectronic and impurities carrying static charges. The articulation is extremely useful for defining perturbations and for analyzing the infrared absorption data on LVMs of complex defect centers. In corroboration with experiments, the Green's functions theory of impurity modes in Li-doped CdTe:Al (ZnSe:Al) has established second NN Li Cd(Zn)-Al Cd(Zn) pairs indicating the passivation of group-I acceptors via interaction with group-III elements as donors. The proposal of an antisite complex model Al Zn-Zn Se-Al Zn for the X center is consistent with the existing absorption results on impurity modes and is equally justified by theoretical considerations-making it the more likely identity for the native defect compensating neighboring Al Zn donors in ZnSe.

AB - In II-VI compound semiconductors, we have used a comprehensive Green's function theory to study the vibrational properties of isotopic defects and to ascertain the microstructure of complex centers involving dopants and intrinsic impurities. The phonons generated by a realistic lattice-dynamical model for the host materials are integrated in simulating the Green's functions to help explicate the observed localized vibrational modes (LVMs) for various defect centers. Contrary to the distinct force constants required for isolated defects, the isotopic shift of LVMs has offered strong revelations for inflexible 'impurity-host' interactions in each isotopic defect. In compound semiconductors a unique force variation correlation with bond covalency is proposed providing corrections to the nearest-neighbor (NN) force constants for the closest mass isoelectronic and impurities carrying static charges. The articulation is extremely useful for defining perturbations and for analyzing the infrared absorption data on LVMs of complex defect centers. In corroboration with experiments, the Green's functions theory of impurity modes in Li-doped CdTe:Al (ZnSe:Al) has established second NN Li Cd(Zn)-Al Cd(Zn) pairs indicating the passivation of group-I acceptors via interaction with group-III elements as donors. The proposal of an antisite complex model Al Zn-Zn Se-Al Zn for the X center is consistent with the existing absorption results on impurity modes and is equally justified by theoretical considerations-making it the more likely identity for the native defect compensating neighboring Al Zn donors in ZnSe.

UR - http://www.scopus.com/inward/record.url?scp=84861141964&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861141964&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.85.195203

DO - 10.1103/PhysRevB.85.195203

M3 - Article

VL - 85

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 19

M1 - 195203

ER -