Very high performance non-volatile memory on flexible plastic substrate

C. H. Cheng; K. Y. Chou; Albert Chin; F. S. Yeh

doi:10.1109/IEDM.2010.5703408

Very high performance non-volatile memory on flexible plastic substrate

C. H. Cheng, K. Y. Chou, Albert Chin, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 10⁵ cycling endurance, large on/off retention memory window >10² even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeO_x/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	21.5.1-21.5.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703408
Publication status	Published - 2010
Externally published	Yes
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	2010/12/06 → 2010/12/08

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2010.5703408

Cite this

Cheng, CH, Chou, KY, Chin, A & Yeh, FS 2010, Very high performance non-volatile memory on flexible plastic substrate. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703408, Technical Digest - International Electron Devices Meeting, IEDM, pp. 21.5.1-21.5.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 2010/12/06. https://doi.org/10.1109/IEDM.2010.5703408

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title = "Very high performance non-volatile memory on flexible plastic substrate",

abstract = "We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.",

author = "Cheng, {C. H.} and Chou, {K. Y.} and Albert Chin and Yeh, {F. S.}",

year = "2010",

doi = "10.1109/IEDM.2010.5703408",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "21.5.1--21.5.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

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AU - Chou, K. Y.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2010

Y1 - 2010

N2 - We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.

AB - We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.

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DO - 10.1109/IEDM.2010.5703408

M3 - Conference contribution

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SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

Very high performance non-volatile memory on flexible plastic substrate

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