Very high performance non-volatile memory on flexible plastic substrate

C. H. Cheng, K. Y. Chou, Albert Chin, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages21.5.1-21.5.4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Cheng, C. H., Chou, K. Y., Chin, A., & Yeh, F. S. (2010). Very high performance non-volatile memory on flexible plastic substrate. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 21.5.1-21.5.4). [5703408] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703408