Vertical organic transistors withstanding high voltage bias

Po Yi Chang; Shao Fu Peng; Yu Chiang Chao; Hung Cheng Lin; Hsiao Wen Zan; Hsin Fei Meng

doi:10.1063/1.4917562

Vertical organic transistors withstanding high voltage bias

Po Yi Chang, Shao Fu Peng, Yu Chiang Chao^*, Hung Cheng Lin, Hsiao Wen Zan, Hsin Fei Meng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No noticeable insulating layer can be observed on the emitter electrode at the bottom of the cylindrical nanopores. The leakage current between the electrodes was suppressed and an operating voltage as high as 15 V was obtained. An on/off current ratio of 10³-10⁴ and an output current density of 5-10 mA/cm² were achieved.

Original language	English
Article number	153301
Journal	Applied Physics Letters
Volume	106
Issue number	15
DOIs	https://doi.org/10.1063/1.4917562
Publication status	Published - 2015 Apr 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4917562

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@article{da1ae2064cb2485eace3ca9bdd1667e4,

title = "Vertical organic transistors withstanding high voltage bias",

abstract = "Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No noticeable insulating layer can be observed on the emitter electrode at the bottom of the cylindrical nanopores. The leakage current between the electrodes was suppressed and an operating voltage as high as 15 V was obtained. An on/off current ratio of 103-104 and an output current density of 5-10 mA/cm2 were achieved.",

author = "Chang, {Po Yi} and Peng, {Shao Fu} and Chao, {Yu Chiang} and Lin, {Hung Cheng} and Zan, {Hsiao Wen} and Meng, {Hsin Fei}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = apr,

day = "13",

doi = "10.1063/1.4917562",

language = "English",

volume = "106",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Vertical organic transistors withstanding high voltage bias

AU - Chang, Po Yi

AU - Peng, Shao Fu

AU - Chao, Yu Chiang

AU - Lin, Hung Cheng

AU - Zan, Hsiao Wen

AU - Meng, Hsin Fei

PY - 2015/4/13

Y1 - 2015/4/13

N2 - Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No noticeable insulating layer can be observed on the emitter electrode at the bottom of the cylindrical nanopores. The leakage current between the electrodes was suppressed and an operating voltage as high as 15 V was obtained. An on/off current ratio of 103-104 and an output current density of 5-10 mA/cm2 were achieved.

AB - Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No noticeable insulating layer can be observed on the emitter electrode at the bottom of the cylindrical nanopores. The leakage current between the electrodes was suppressed and an operating voltage as high as 15 V was obtained. An on/off current ratio of 103-104 and an output current density of 5-10 mA/cm2 were achieved.

UR - http://www.scopus.com/inward/record.url?scp=84928501366&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928501366&partnerID=8YFLogxK

U2 - 10.1063/1.4917562

DO - 10.1063/1.4917562

M3 - Article

AN - SCOPUS:84928501366

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153301

ER -

Vertical organic transistors withstanding high voltage bias

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